BSO330N02KG

BSO330N02K G OptiMOS™2 Power-Transistor Features • For fast switching converters and sync. rectification • Qualified according to JEDEC1) for target applications • Super Logic level 2.5V rated; N-channel • Dual n-channel • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max V GS=4.5 V V GS=2.5 V ID PG-DSO-8 20 30 50 6.5 A V mΩ Type BSO330N02K Package PG-DSO-8 Marking 330N2K Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions 10 secs Continuous drain current ID V gs=4.5V, T C=25 °C2) V gs=4.5V, T C=70 °C2) V gs=2.5V, T C=25 °C2) V gs=2.5V, T C=70 °C2) Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T C=25 °C3) I D=6.5 A, R GS=25 Ω I D=6.5 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 6.5 5.2 5.1 4 26 19 mJ Value steady state 5.4 4.3 4.2 3.3 A A Unit Reverse diode d v /dt Gate source voltage Power dissipation dv /dt V GS P tot 6 ±12 kV/µs V 1.4 W T A=25 °C2) T A=25 °C1) 2.0 2.5 -55 ... 150 Operating and storage temperature ESD Class Rev.1.02 T j, T stg °C 0 (0V to 250V) page 1 2010-05-12 IEC climatic category; DIN IEC 68-1 55/150/56 Rev.1.02 page 2 2010-05-12 BSO330N02K G Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS R thJA minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area2), t p≤10 s 6 cm2 cooling area2), steady state 50 110 K/W - - 150 - - 63 - - 90 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=20 µA V DS=20 V, V GS=0 V, T j=25 °C V DS=20 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=12 V, V DS=0 V V GS=2.5 V, I D=5.1 A V GS=4.5 V, I D=6.5 A Gate resistance Transconductance 1) 2) 20 0.7 - 0.95 - 1.2 1 V µA - 38 24 1.3 20 100 100 50 30 Ω S nA mΩ RG g fs |V DS|>2|I D|R DS(on)max, I D=6.5 A 10 J-STD20 and JESD22 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev.1.02 page 3 2010-05-12 BSO330N02K G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=6.5 A, T j=25 °C V R=10 V, I F=6.5 A, di F/dt =100 A/µs V R=10 V, I F=6.5 A, di F/dt =100 A/µs 0.88 1.5 26 1.2 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 4.5 V V DD=10 V, V GS=0 V V DD=10 V, I D=6.5 A, V GS=0 to 4.5 V 1.2 0.5 0.7 1.4 3.7 2.2 3.4 2.6 1.6 0.7 1.1 2 4.9 4.5 3.4 V nC nC C iss C oss C rss t d(on) tr t d(off) tf V DD=10 V, V GS=4.5 V, I D=6.5 A, R G=1.6 Ω V GS=0 V, V DS=10 V, f =1 MHz 550 190 26 7.4 16.8 13.4 2.8 730 250 39 ns pF Values typ. max. Unit Reverse recovery time t rr - 14 - ns Reverse recovery charge Q rr - 4.8 - nC 4) See figure 16 for gate charge parameter definition Rev.1.02 page 4 2010-05-12 BSO330N02K G 1 Power dissipation P tot=f(T A); t p≤10 s 2 Drain current I D=f(T A); V GS≥4.5 V; t p≤10 s 2.5 7 6 2 5 1.5 P tot [W] 4 I D [A] 1 3 2 0.5 1 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C1); D =0 parameter: t p 102 1 µs 10 µs 100 µs 4 Max. transient thermal impedance Z thJA=f(t p)2) parameter: D =t p/T 102 0.5 10 1 0.2 1 ms 101 10 ms 0.1 0.05 I D [A] 100 DC 100 ms Z thJA [K/W] 0.02 0.01 10 10 -1 0 single pulse 10-2 10 -1 10-1 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 101 102 103 V DS [V] t p [s] Rev.1.02 page 5 2010-05-12 BSO330N02K G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 30 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 60 2V 2.2 V 4V 50 2.5 V 20 3V 40 R DS(on) [mΩ ] I D [A] 3V 30 2.5 V 3.5 V 10 2.4 V 4.5 V 20 4V 2.2 V 10 2V 1.8 V 1.6 V 0 0 1 2 0 3 0 4 8 12 16 20 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 20 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 30 16 20 12 8 10 4 150 °C 25 °C 0 0 1 2 3 g fs [S] 0 0 4 8 12 16 20 I D [A] V GS [V] I D [A] Rev.1.02 page 6 2010-05-12 BSO330N02K G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=6.5 A; V GS=4.5 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS 50 1.6 40 1.2 R DS(on) [mΩ ] V GS(th) [V] 30 98% 200 µA typ 0.8 20 µA 20 0.4 10 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 Ciss 102 Coss 101 25 °C 150 °C, 98% C [pF] 10 2 I F [A] 150 °C 100 Crss 25 °C, 98% 101 0 5 10 15 20 10-1 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev.1.02 page 7 2010-05-12 BSO330N02K G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 101 25 °C 14 Typ. gate charge V GS=f(Q gate); I D=6.5 A pulsed parameter: V DD 5 4 100 °C 10 V 4V 16 V 3 100 V GS [V] 2 1 0 103 0 I AV [A] 125 °C 10-1 100 101 102 1 2 3 4 5 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 24 V GS Qg 22 V BR(DSS) [V] 20 V g s(th) 18 Q g(th) Q gs -60 -20 20 60 100 140 Q sw Q gd Q g ate 16 T j [°C] Rev.1.02 page 8 2010-05-12 BSO330N02K G Package Outline PG-DSO-8: Outline PG-TDSON-8 Rev.1.02 page 9 2010-05-12