BSO612CVG

Rev. 2.0 BSO 612 CV G SIPMOS ® Small-Signal-Transistor Product Summary Features · Dual N- and P -Channel · N P -60 0.3 -2 V Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 60 0.12 3 W A Enhancement mode · Avalanche rated · Pb-free lead plating;RoHS compliant Type BSO 612 CV Package PG-DSO-8 Marking 612CV Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol N Continuous drain current Value P Unit A ID 3 2.4 -2 -1.6 -8 T A = 25 °C T A = 70 °C Pulsed drain current I D puls EAS 12 T A = 25 °C Avalanche energy, single pulse I D = 3 A, V DD = 25 V, R GS = 25 W mJ 47 70 0.2 kV/µs 6 6 ±20 2 V W I D = -2 A, VDD = -25 V, R GS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, T jmax = 150 °C EAR dv/dt 0.2 I S = 3 A, V DS = 48 V, di/dt = 200 A/µs I S = -2 A, V DS = -48 V, di/dt = -200 A/µs Gate source voltage Power dissipation VGS Ptot ±20 2 T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j , Tstg -55...+150 55/150/56 °C Page 1 2006-08-25 Rev. 2.0 Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point ( Pin 4) SMD version, device on PCB: @ min. footprint; t @ min. footprint; t £ BSO 612 CV G Symbol min. N RthJS P - Values typ. max. 40 40 110 62.5 70 62.5 Unit K/W RthJA N N P P 10 sec. 10 sec. @ 6 cm 2 cooling area 1) ; t £ 10 sec. £ @ 6 cm 2 cooling area 1) ; t £ 10 sec. Static Characteristics , at Tj = 25 °C, unless otherwise specified Drain- source breakdown voltage V(BR)DSS N P 60 -60 3 -3 0.1 10 -0.1 -10 4 -4 V VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA Gate threshold voltage, VGS = VDS ID = 20 µA VGS(th) N P 2.1 -2.1 ID = -450 µA Zero gate voltage drain current IDSS N N P P 1 100 -1 -100 µA VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS N P 10 -10 0.09 0.22 100 -100 nA VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V Drain-source on-state resistance RDS(on) N P 0.12 0.3 W VGS = 10 V, ID = 3 A VGS = -10 V , ID = -2 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2006-08-25 Rev. 2.0 Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Characteristics Transconductance Symbol min. BSO 612 CV G Values typ. max. Unit gfs N P 2 1.2 4 2.4 275 320 90 105 50 40 12 15 35 60 25 145 30 95 - S VDS³2 * I D * R DS(on)max, ID = 3 A VVDS³2 * I D * R DS(on)max, ID = -2 A Input capacitance Ciss N P 340 400 115 130 65 50 pF VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance Coss N P - VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance Crss N P - VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time td(on) N P 18 23 55 90 40 220 45 140 ns VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 W VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 W Rise time tr N P - VDD = 30 V, VGS = 10 V, ID = 3 A, R G = 33 W VDD = -30 V, V GS = -10 V, ID = -2 A, RG = 27 W Turn-off delay time td(off) N P - VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 W VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 W Fall time tf N P - VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 W VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 W Page 3 2006-08-25 Rev. 2.0 BSO 612 CV G Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Characteristics Gate to source charge Symbol min. Values typ. max. nC 1 2 5.5 4.5 10.3 10.5 5 -4 1.5 3 8.3 6.8 15.5 16 V Unit Q gs N P VDD = 48 V, ID = 3 A VDD = -48 V, ID = -2 A Gate to drain charge Q gd N P - VDD = 48 V, ID = 3 A VDD = -48 V, ID = -2 A Gate charge total Qg N P - VDD = 48 V, ID = 3 A, VGS = 0 to 10V VDD = -48 V, ID = -2 A, VGS = 0 to -10V Gate plateau voltage V(plateau) N P VDD = 48 V, ID = 3 A VDD = -48 V, ID = -2 A Reverse Diode Inverse diode continuous forward current N IS P N ISM P - 0.9 -0.9 55 55 90 65 3 -2 12 -8 A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VSD N P 1.2 -1.2 V VGS = 0 V, I F = I S VGS = 0 V, I F = I S Reverse recovery time trr N P 85 85 ns VR = 30 V, IF=l S, di F/dt = 100 A/µs VR = -30 V, IF=l S , diF/dt = -100 A/µs Reverse recovery charge Qrr N P 135 100 nC VR = 30 V, IF=l S , diF/dt = 100 A/µs VR = -30 V, I F=lS, diF/dt = -100 A/µs Page 4 2006-08-25 Rev. 2.0 Power Dissipation (N-Ch.) Power Dissipation (P-Ch.) BSO 612 CV G Ptot = f (TA ) BSO 612 CV Ptot = f (TA) BSO 612 CV 2.2 2.2 W 1.8 1.6 W 1.8 1.6 Ptot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 Ptot °C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 160 0.0 0 20 40 60 80 100 120 °C 160 TA TA Drain current (N-Ch.) Drain current (P-Ch.) I D = f (T A) parameter: VGS³ 10 V BSO 612 CV ID = f (TA) parameter: VGS ³ -10 V BSO 612 CV 3.2 -2.2 A A -1.8 2.4 -1.6 ID ID 2.0 -1.4 -1.2 1.6 -1.0 1.2 -0.8 -0.6 -0.4 0.4 -0.2 0.0 0 20 40 60 80 100 120 0.8 °C 160 0.0 0 20 40 60 80 100 120 °C 160 TA Page 5 TA 2006-08-25 Rev. 2.0 Safe operating area (N-Ch.) BSO 612 CV G Safe operating area (P-Ch.) I D = f ( VDS ) parameter : D = 0 , T A = 25 °C 10 2 BSO 612 CV ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 1 BSO 612 CV tp = 200.0 µs ID ID RD 10 0 S( on ) -10 0 R = 100 µs DS ( 10 1 VD S on ) /I D tp = 45.0 µs = V DS A /I A D 1 ms 1 ms 10 ms 10 ms -10 -1 10 -1 DC DC 10 -2 -1 10 -10 -2 -1 -10 10 0 10 1 V 10 2 -10 0 -10 1 V -10 2 VDS VDS Transient thermal impedance (N-Ch.) Transient thermal impedance (P-Ch.) Z thJC = f(t p) parameter : D = tp/T 10 2 ZthJC = f(tp) parameter : D = tp /T 10 2 BSO 612 CV BSO 612 CV K/W K/W 10 1 10 1 Z thJC 10 0 D = 0.50 0.20 single pulse 10 -1 0.10 0.05 0.02 0.01 Z thJC 10 0 D = 0.50 0.20 0.10 10 -1 single pulse 0.05 0.02 0.01 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp Page 6 tp 2006-08-25 Rev. 2.0 Typ. output characteristics (N-Ch.) BSO 612 CV G Typ. output characteristics (P-Ch.) I D = f (VDS) parameter: tp = 80 µs BSO 612 CV ID = f (VDS ) parameter: tp = 80 µs BSO 612 CV 7.5 Ptot = 2.00W VGS [V] a 4.0 b 4.2 4.5 4.7 -5.0 A Ptot = 2.00W VGS [V] a -4.0 A i h f e 6.0 5.5 5.0 g -4.0 -3.5 c db c d e f -4.2 -4.5 -4.7 -5.0 -6.0 c d e ID ID 5.0 5.2 5.5 5.7 6.0 4.5 4.0 3.5 3.0 2.5 2.0 c d e f f g h i -3.0 -2.5 -2.0 -1.5 -1.0 b a 1.5 1.0 0.5 a b -0.5 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 -5.0 VDS VDS Typ. drain-source-on-resistance (N-Ch.) Typ. drain-source-on-resistance (P-Ch.) RDS(on) = f (ID) parameter: VGS BSO 612 CV RDS(on) = f (ID ) parameter: VGS BSO 612 CV 0.38 W 1.0 b c d e f g W 0.8 a b c d 0.32 RDS(on) RDS(on) h 0.28 0.24 0.20 0.16 0.12 i 0.7 0.6 0.5 0.4 0.3 0.2 e f 0.08 0.04 VGS [V] = b 4.2 c 4.5 d 4.7 e f 5.0 5.2 g 5.5 h i 5.7 6.0 0.1 VGS [V] = a b c d e f -4.0 -4.2 -4.5 -4.7 -5.0 -6.0 0.00 0.0 1.0 2.0 3.0 4.0 5.0 A 6.5 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 °C -5.0 ID Page 7 Tj 2006-08-25 Rev. 2.0 Typ. transfer characteristics (N-Ch.) parameter: tp = 80 µs I D = f (VGS), V DS ³ 2 x I D x R DS(on)max 10 BSO 612 CV G Typ. transfer characteristics (P-Ch.) parameter: tp = 80 µs ID = f (VGS ), VDS ³ 2 x ID x RDS(on)max 5.0 A 8 7 A 4.0 3.5 ID 6 5 4 3 2 1 0 0 ID 1 2 3 4 5 7 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 VGS V 1.0 2.0 3.0 4.0 VGS V 6.0 Typ. forward transconductance (N-Ch.) Typ. forward transconductance (P-Ch.) gfs = f(ID); T j = 25 °C parameter: g fs 7.0 gfs = f(ID); Tj = 25 °C parameter: gfs 4.0 S S 6.0 5.5 5.0 3.0 gfs gfs 1 2 3 4 5 6 7 8 4.5 4.0 3.5 3.0 2.5 2.0 2.5 2.0 1.5 1.0 1.5 1.0 0.5 0.0 0 0.5 A 10 ID 0.0 0.0 -1.0 -2.0 -3.0 -4.0 A -6.0 ID Page 8 2006-08-25 Rev. 2.0 Drain-source on-resistance (N-Ch.) BSO 612 CV G Drain-source on-resistance (P-Ch.) RDS(on) = f (Tj) parameter : I D = 3 A , VGS = 10 V BSO 612 CV RDS(on) = f (Tj) parameter : ID = -2 A , VGS = -10 V BSO 612 CV W RDS(on) 0.34 0.80 W RDS(on) 0.60 0.28 0.24 0.50 0.20 0.16 0.12 0.40 98% typ 0.30 98% typ 0.08 0.20 0.04 0.00 -60 0.10 -20 20 60 100 °C 180 0.00 -60 -20 20 60 100 °C 180 Tj Tj Gate threshold voltage (N-Ch.) Gate threshold voltage (P-Ch.) VGS(th) = f (T j) parameter: VGS = VDS, ID = 20 µA 5.0 VGS(th) = f (Tj) parameter: VGS = VDS , ID = -450 µA -5.0 V 4.0 98% V 98% -4.0 V GS(th) 3.5 3.0 2.5 2% typ V GS(th) -3.5 typ -3.0 -2.5 2% 2.0 1.5 1.0 0.5 0.0 -60 -2.0 -1.5 -1.0 -0.5 0.0 -60 -20 20 60 100 160 °C Tj -20 20 60 100 160 °C Tj Page 9 2006-08-25 Rev. 2.0 Typ. capacitances (N-Ch.) Typ. capacitances (P-Ch.) BSO 612 CV G C = f(VDS ) parameter: VGS =0 V, f=1 MHz 10 3 C = f(VDS) parameter: VGS=0 V, f=1 MHz 10 3 pF pF Ciss C C Ciss 10 2 Coss Crss 10 2 Coss Crss 10 1 0 5 10 15 20 25 VDS V 35 10 1 0 -5 -10 -15 -20 -25 VDS V -35 Forward characteristics of reverse diode Forward characteristics of reverse diode I F = f (VSD), (N-Ch.) parameter: Tj , tp = 80 µs 10 1 IF = f (VSD ), (P-Ch.) parameter: Tj , tp = 80 µs -10 1 BSO 612 CV BSO 612 CV A A 10 0 -10 0 IF 10 -1 IF -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0.0 2.4 V -10 -2 0.0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) -2.4 V 0.4 0.8 1.2 1.6 2.0 3.0 -0.4 -0.8 -1.2 -1.6 -2.0 -3.0 VSD Page 10 VSD 2006-08-25 Rev. 2.0 Avalanche Energy EAS = f (Tj) (N-Ch.) parameter: ID = 3 A, VDD = 25 V RGS = 25 W 50 BSO 612 CV G Avalanche Energy EAS = f (Tj ) parameter: ID = -2 A, VDD = -25 V RGS = 25 W 80 mJ 40 mJ 60 35 E AS E AS 45 65 85 105 125 165 30 25 20 15 50 40 30 20 10 5 0 25 10 °C 0 25 45 65 85 105 125 °C 165 Tj Tj Typ. gate charge (N-Ch.) Typ. gate charge (P-Ch.) VGS = f (QGate) parameter: ID = 3 A BSO 612 CV VGS = f (QGate) parameter: ID = -2 A BSO 612 CV 16 -16 V V 12 -12 VGS 10 VGS 0,2 VDS max 0,8 VDS max -10 8 -8 0,2 VDS max 0,8 VDS max 6 -6 4 -4 2 -2 0 0 2 4 6 8 nC 12 0 0 2 4 6 8 10 12 14 16 nC 19 QGate Page 11 QGate 2006-08-25 Rev. 2.0 Drain-source breakdown voltage BSO 612 CV G Drain-source breakdown voltage V(BR)DSS = f (Tj), (N-Ch.) BSO 612 CV V(BR)DSS = f (Tj ), (P-Ch.) BSO 612 CV 72 -72 V V 68 66 64 62 60 58 56 54 -60 V(BR)DSS V(BR)DSS -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 -20 20 60 100 °C 180 Tj Tj Page 12 2006-08-25 Rev. 2.0 BSO 612 CV G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 13 2006-08-25