BSO613SPV

Preliminary data SIPMOS® Small-Signal-Transistor Features · BSO613SPV Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current S S S G 1 2 3 4 Top View 8 7 6 5 P-Channel Enhancement mode Avalanche rated dv/dt rated VDS RDS(on) ID D D D D -60 0.13 -3.44 V W · · · A SIS00062 Type BSO613SPV Package SO 8 Ordering Code Q67042-S4021 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -3.44 -13.8 150 0.25 6 Unit A ID ID puls EAS EAR dv/dt T A = 25 °C Pulsed drain current T A = 25 °C Avalanche energy, single pulse mJ I D = -3.44 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs I S = -3.44 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 2.5 -55... +150 55/150/56 V W °C T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 1999-11-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint; t £ BSO613SPV Symbol min. Values typ. max. 25 Unit RthJS RthJA - K/W 10 sec. - - 100 50 @ 6 cm 2 cooling area 1); t £ 10 sec. Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -3 max. -4 µA -0.1 -10 -10 0.11 -1 -100 -100 0.13 nA V Unit V(BR)DSS VGS(th) IDSS -60 -2.1 VGS = 0 V, I D = -250 µA Gate threshold voltage, VGS = VDS I D = 1 mA Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 °C VDS = -60 V, V GS = 0 V, T j = 125 °C Gate-source leakage current IGSS RDS(on) - VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -10 V, I D = -3.44 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-11-22 Preliminary data Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. BSO613SPV Unit max. gfs Ciss Coss Crss td(on) 2.2 - 4.4 700 235 95 10 875 295 120 15 S pF VDS³2*I D*RDS(on)max , ID = -3.44 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Rise time tr - 11 16.5 VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Turn-off delay time td(off) - 32 48 VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Fall time tf - 12 18 VDD = -30 V, V GS = -10 V, ID = -3.44 A, RG = 2.7 W Page 3 1999-11-22 Preliminary data Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Gate to source charge Values typ. BSO613SPV Unit max. Qgs Qgd Qg V(plateau) - 1.6 10 20 -3.74 2.4 15 30 - nC VDD = -48 V, ID = -3.44 A Gate to drain charge VDD = -48 V, ID = -3.44 A Gate charge total VDD = -48 V, ID = -3.44 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -3.44 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. -0.87 56 38 max. -3.44 -13.8 -1.16 84 57 Unit IS ISM VSD trr Qrr - A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage V ns nC VGS = 0 V, I F = -3.44 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs Page 4 1999-11-22 Preliminary data Power Dissipation Drain current BSO613SPV Ptot = f (T A) BSO613SPV ID = f (TA ) parameter: VGS ³ 10 V BSO613SPV 2.8 -3.8 W 2.4 2.2 2.0 A -3.2 -2.8 -2.4 -2.0 -1.6 -1.2 Ptot 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -0.4 0.2 0.0 0 20 40 60 80 100 120 0.0 0 -0.8 °C ID 1.8 160 20 40 60 80 100 120 °C 160 TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T A = 25 °C -10 2 ZthJC = f (tp ) parameter : D = tp /T 10 2 BSO613SPV BSO613SPV A /I D tp = 550.0 µs 1 ms K/W 10 1 -10 1 = V DS ID RD S( ZthJC ) on 10 ms 10 0 -10 0 D = 0.50 10 -1 0.20 0.10 -10 -1 10 -2 DC single pulse 0.05 0.02 0.01 -10 -2 -1 -10 -10 0 -10 1 V -10 2 10 -3 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 3 VDS Page 5 tp 1999-11-22 Preliminary data Typ. output characteristic BSO613SPV Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs BSO613SPV RDS(on) = f (ID ) parameter: VGS BSO613SPV -8.5 Ptot = 2.50W j ih g VGS [V] a -3.0 b -3.5 0.42 A -7.0 -6.0 W b c d e f 0.36 0.32 f d e -4.0 -4.2 -4.5 -4.7 -5.0 -5.5 -10.0 RDS(on) c -3.7 0.28 0.24 0.20 0.16 0.12 g h i j ID -5.0 e f g -4.0 -3.0 h i dj -2.0 c b 0.08 VGS [V] = -1.0 0.04 a b c d e f -3.5 -3.7 -4.0 -4.2 -4.5 g h i j -4.7 -5.0 -5.5 -10.0 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 0.00 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 A -7.0 VDS ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance VDS³ 2 x I D x RDS(on)max parameter: tp = 80 µs -10 gfs = f(ID); Tj=25°C parameter: gfs 7 A S -8 -7 -6 -5 -4 -3 -2 1 -1 0 0 0 0 3 5 gfs 4 2 -1 -2 -3 -4 -6 ID VGS V -1 -2 -3 -4 -5 -6 -7 -8 A -10 ID Page 6 1999-11-22 Preliminary data Drain-source on-state resistance Gate threshold voltage BSO613SPV RDS(on) = f (Tj) parameter : I D = -3.44 A, VGS = -10 V BSO613SPV VGS(th) = f (Tj) parameter: VGS = VDS , ID = 1 mA -5.0 W RDS(on) 0.34 V -4.0 0.28 0.24 VGS(th) -3.5 -3.0 -2.5 -2.0 -1.5 98% 0.20 0.16 0.12 98% typ typ. 2% 0.08 -1.0 0.04 0.00 -60 -0.5 0.0 -60 -20 20 60 100 °C 180 -20 20 60 100 °C 180 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) parameter: VGS=0V, f=1 MHz 10 4 IF = f (VSD ) parameter: Tj , tp = 80 µs -10 2 BSO613SPV pF A 10 3 -10 1 C Coss 10 2 IF -10 0 Ciss Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 -5 -10 -15 -20 -25 -30 V -40 -10 -1 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 7 1999-11-22 Preliminary data Avalanche energy Typ. gate charge BSO613SPV EAS = f (Tj) para.: I D = -3.44 A , VDD = -25 V, RGS = 25 160 VGS = f (QGate ) parameter: ID = -3.44 A pulsed BSO613SPV -16 mJ V 120 -12 100 VGS EAS -10 80 -8 0,2 VDS max 0,8 VDS max 60 -6 40 -4 20 -2 0 25 45 65 85 105 125 °C 165 0 0 4 8 12 16 20 24 nC 30 Tj QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSO613SPV -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 V(BR)DSS -20 20 60 100 °C 180 Tj Page 8 1999-11-22 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. BSO613SPV Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 1999-11-22