BSP170P_09

BSP 170 P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • Pb-free lead finishing; RoHS compliant Product Summary V DS R DS(on),max ID -60 0.3 -1.9 V Ω A PG-SOT-223 Type BSP 170 P Package PG-SOT-223 Tape and reel information L6327: 1000pcs/reel Marking BSP170 Lead free Yes Packing Non Dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value steady state Continuous drain current ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=1.9 A, R GS=25 Ω -1.9 -1.5 -7.6 70 0.18 I D=1.9 A, V DS=48 V, di /dt =-200 A/µs, T j,max=150 °C mJ A Unit Avalanche energy, periodic limited by E AR Tjmax Reverse diode d v /dt Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 dv /dt V GS P tot T j, T stg JESD22-A114 (HBM) T A=25 °C -6 ±20 1.8 -55 ... 150 1A (250V to 500V) 260 °C 55/150/56 kV/µs V W °C Rev 2.52 page 1 2009-02-16 BSP 170 P Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction -soldering point SMD version, device on PCB: R thJS Values typ. max. Unit - - 20 K/W R thJA minimal footprint - - 110 K/W 6 cm2 cooling area1) - - 70 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-250 µA V DS=-60 V, V GS=0 V, T j=25 °C V DS=-60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) g fs V GS=-20 V, V DS=0 V V GS=-10 V, I D=-1.9 A |V DS|>2|I D|R DS(on)max, I D=-1.9 A -60 -2.1 -3 -4 V Zero gate voltage drain current I DSS - -0.1 -1 µA - -10 -10 239 -100 -100 300 nA mΩ Transconductance 1.3 2.6 - S 1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.52 page 2 2009-02-16 BSP 170 P Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr V R=30 V, I F=|I S|, di F/dt =100 A/µs T A=25 °C V GS=0 V, I F=-1.9 A, T j=25 °C -0.83 36 41 -1.98 -7.6 -1.1 54 62 V ns nC A Q gs Q gd Qg V plateau V DD=-48 V, I D=-1.9 A, V GS=0 to -10 V -1.4 -4.9 -10 -4.34 -1.9 -7.4 -14 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-30 V, V GS=10 V, I D=-1.9 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 328 105 38 14 28 92 60 410 135 48 21 42 138 90 ns pF Values typ. max. Unit Rev 2.52 page 3 2009-02-16 BSP 170 P 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); |V GS|≥10 V 2.1 1.8 1.8 1.5 1.5 1.2 P tot [W] 0.9 -I D [A] 1.2 0.9 0.6 0.6 0.3 0.3 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C1); D =0 parameter: t p 101 10 µs 100 µs limited by on-state resistance 10 ms 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 102 1 ms 0.5 0.2 100 100 ms 101 0.1 Z thJS [K/W] -I D [A] 0.05 0.02 DC 10-1 100 0.01 single pulse 10-2 0.1 1 10 100 10-1 10-5 10-4 10-3 10-2 10-1 100 101 102 -V DS [V] t p [s] Rev 2.52 page 4 2009-02-16 BSP 170 P 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 7 -7 V -20 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 1000 900 -5.5 V 6 -10 V -6V 800 700 -4 V 5 -I D [A] 4 -5 V R DS(on) [mΩ ] 600 -4.5 V 500 -5 V 3 400 300 200 -20 V -6 V -5.5 V -7 V -10 V 2 -4.5 V 1 -4V 100 0 0 1 2 3 4 5 0 0 1 2 3 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 3 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 3.5 3 2.5 2 2 -I D [A] g fs [S] 1 125 °C 25 °C 1.5 1 0.5 0 0 1 2 3 4 5 0 0 0.5 1 1.5 2 2.5 -V GS [V] -I D [A] Rev 2.52 page 5 2009-02-16 BSP 170 P 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-1.9 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-250 µA 600 550 500 450 400 4 max. 5 R DS(on) [mΩ ] -V GS(th) [V] 350 300 250 200 150 100 50 0 -60 -20 98 % typ. 3 typ. 2 min. 1 0 20 60 100 140 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 101 150 °C, typ 25 °C, 98% Ciss 100 Coss 150 °C, 98% C [pF] 102 Crss I F [A] 10-1 25 °C, typ 101 0 5 10 15 20 25 10-2 0 0.5 1 1.5 2 2.5 3 -V DS [V] -V SD [V] Rev 2.52 page 6 2009-02-16 BSP 170 P 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 101 14 Typ. gate charge V GS=f(Q gate); I D=-1.9 A pulsed parameter: V DD 16 14 12 10 12 V 30 V 48 V -I AV [A] 10 0 25 °C 100 °C 125 °C V GS [V] 104 8 6 4 2 10-1 100 101 102 t AV [µs] 103 0 0 5 10 15 Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 70 65 -V BR(DSS) [V] 60 55 50 -60 -20 20 60 100 140 T j [°C] Rev 2.52 page 7 2009-02-16 BSP 170 P Package Outline SOT-223: Outline Footprint Packaging Tape Operating and storage temperature Dimensions in mm Rev 2.52 page 8 2009-02-16 BSP 170 P Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.52 page 9 2009-02-16