BSP295

BSP 295 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 G Type Pin 2 D Marking Pin 3 S Pin 4 D VDS 50 V ID 1.8 A RDS(on) 0.3 Ω Package BSP 295 Type BSP 295 SOT-223 BSP 295 Ordering Code Q67000-S066 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Values Unit Drain source voltage Drain-gate voltage RGS = 20 kΩ VDS V DGR 50 V 50 VGS Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current TA = 34 ˚C ± 20 Class 1 A 1.8 ID DC drain current, pulsed TA = 25 ˚C IDpuls 7.2 Ptot Power dissipation TA = 25 ˚C W 1.8 Data Sheet 1 05.99 BSP 295 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Tj Tstg RthJA R thJS -55 ... + 150 -55 ... + 150 ˚C ≤ 70 ≤ 10 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 50 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 0.8 IDSS 1.4 2 Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 125 ˚C VDS = 30 V, VGS = 0 V, Tj = 25 ˚C IGSS 0.1 8 - 1 50 100 µA nA nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance VGS = 10 V, ID = 1.8 A VGS = 4.5 V, ID = 1.8 A Ω 0.25 0.45 0.3 0.5 Data Sheet 2 05.99 BSP 295 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 1.7 A gfs S 0.5 1.7 pF 320 425 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 110 170 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 50 75 ns Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω tr 8 12 Rise time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω td(off) 20 30 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω tf 120 160 Fall time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 Ω - 85 115 Data Sheet 3 05.99 BSP 295 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Reverse Diode Inverse diode continuous forward current TA = 25 ˚C IS A 1.8 Inverse diode direct current,pulsed TA = 25 ˚C ISM V SD - 7.2 V Inverse diode forward voltage VGS = 0 V, IF = 3.6 A, Tj = 25 ˚C - 1.1 1.5 Data Sheet 4 05.99 BSP 295 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 1.9 A 1.6 2.0 W Ptot 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 ˚C 160 ID 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 ˚C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25˚C Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T 10 2 K/W 10 1 ZthJA 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Data Sheet 5 05.99 BSP 295 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 4.0 A e k j Ptot = 2W ih l Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 0.9 a b c d gf Ω VGS [V] a 2.0 b 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 ID 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 a RDS (on) 0.7 0.6 0.5 0.4 0.3 k c d de f g h c i j k l e f g ih j 0.2 b 0.1 0.0 V 5.0 VGS [V] = a 2.5 2.0 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 A 3.8 VDS ID Typ. transfer characteristics ID = f(V GS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 4.5 A ID 2.2 S gfs 1.8 1.6 3.5 3.0 1.4 2.5 2.0 1.5 1.0 0.4 0.5 0.0 0 1 2 3 4 5 6 7 8 V VGS 1.2 1.0 0.8 0.6 0.2 0.0 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A ID 4.0 Data Sheet 6 05.99 BSP 295 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 1.8 A, VGS = 10 V 0.75 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.65 RDS (on)0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -20 20 60 100 ˚C 160 VGS(th) 3.6 3.2 2.8 98% typ 2.4 98% 2.0 1.6 1.2 typ 2% 0.8 0.4 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 1 pF C Ciss A IF 10 0 10 2 Coss Crss 10 1 10 -1 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 0 0 10 -2 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSP 295 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) Safe operating area ID=f(V DS) parameter : D = 0.01, TC=25˚C 60 V 58 V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99