BSP295_07

Rev 1.3 BSP295 SIPMOS Small-Signal-Transistor Feature Product Summary VDS RDS(on) ID 60 0.3 1.8 PG-SOT-223 4 · N-Channel · Enhancement mode · dv/dt rated V W A • Pb-free lead plating; RoHS compliant 3 2 1 VPS05163 Type BSP295 Package PG-SOT-223 Tape and Reel Information L6327: 1000 pcs/reel Marking BSP295 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 1.8 1.44 Unit A Pulsed drain current TA=25°C I D puls dv/dt VGS Ptot T j , Tstg 7.2 6 ±20 Class 1 1.8 -55... +150 55/150/56 W °C kV/µs V Reverse diode d v/dt IS=1.8A, VDS=40V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2007-02-07 Rev 1.3 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) BSP295 Symbol min. RthJS RthJA - Values typ. 15 80 48 max. 25 115 70 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID =250µA Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) 60 0.8 Values typ. 1.1 max. 1.8 Unit V Gate threshold voltage, VGS = VDS ID=400µA Zero gate voltage drain current VDS=60V, VGS =0, Tj=25°C VDS=60V, VGS =0, Tj=150°C µA 8 1 0.1 50 10 nA Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=10V, ID=1.8A VGS=4.5V, ID=1.8A W 0.22 0.39 0.3 0.5 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2007-02-07 Rev 1.3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0, IF = IS VR=25V, I F=lS , diF/dt=100A/µs BSP295 Symbol Conditions min. Values typ. 1.7 295 95 45 5.4 9.9 27 19 max. 368 118 67 8.1 15 41 28 Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS³2*ID*RDS(on)max, ID=1.44A VGS=0, VDS=25V, f=1MHz 0.8 - S pF VDD=15V, VGS=4.5V, ID=1.44 A, RG=15W ns Q gs Q gd Qg VDD =24V, ID =1.8A - 0.9 5.6 14 3.1 1.1 8.4 17 3.8 nC VDD =24V, ID =1.8A, VGS =0 to 10V V(plateau) VDD =24V, ID = 1.8 A V IS TA=25°C - 0.84 36 38 1.8 7.2 1.3 45 48 A V ns nC Page 3 2007-02-07 Rev 1.3 1 Power dissipation Ptot = f (TA) 1.9 BSP295 BSP295 2 Drain current ID = f (TA) 1.9 parameter: VGS ³ 10 V BSP295 W 1.6 1.4 A 1.6 1.4 P tot 1 0.8 0.6 0.4 0.2 0 0 ID 20 40 60 80 100 120 1.2 1.2 1 0.8 0.6 0.4 0.2 0 0 °C 160 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 1 BSP295 tp = 150.0 µs 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 2 BSP295 /ID A RD o S( = n) VD S K/W 1 ms 10 1 10 0 10 ms Z thJA 10 0 D = 0.50 0.20 ID -1 10 0.10 10 -1 DC single pulse 0.05 0.02 0.01 10 -2 0 10 10 1 V 10 2 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 4 tp 2007-02-07 Rev 1.3 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS 3.6 BSP295 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS 1.8 A 5V 6V 7V 3 10V 2.7 2.4 4.2V W R DS(on) 5V 6V 1.4 7V 10V 1.2 1 3V 2.4V 2.8V 3.4V 3.8V 4.2V 3.8V ID 2.1 1.8 1.5 3V 3.4V 0.8 0.6 1.2 0.9 0.6 0.3 0 0 0.5 1 1.5 2 2.5 2.4V 2.8V 0.4 0.2 0 0 3 3.5 4 V VDS 5 0.6 1.2 1.8 2.4 A ID 3.6 7 Typ. transfer characteristics parameter: Tj = 25 °C 2.5 ID = f ( VGS ); VDS³ 2 x ID x RDS(on)max 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C 2.5 A S 1.5 gfs 0.5 1 1.5 2 2.5 3 4 ID 1.5 1 1 0.5 0.5 0 0 V VGS 0 0 0.6 1.2 1.8 2.4 V ID 3.6 Page 5 2007-02-07 Rev 1.3 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 1.8 A, VGS = 10 V 0.75 BSP295 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID = 1 mA 2.2 W BSP295 V 98% 0.6 1.8 R DS(on) 0.55 0.5 0.45 0.4 0.35 0.3 98% V GS(th) 1.6 typ. 1.4 1.2 1 2% 0.8 0.25 0.2 0.15 0.1 0.05 0 -60 -20 20 60 100 °C typ 0.6 0.4 0.2 180 0 -60 -20 20 60 100 160 Tj °C Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 °C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 1 BSP295 A Ciss pF 10 0 C 10 2 Crss IF 10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) V Coss 10 1 0 5 10 15 20 30 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2007-02-07 Rev 1.3 13 Typ. avalanche energy EAS = f (Tj) 60 BSP295 14 Typ. gate charge VGS = f (QG ); parameter: VDS , ID = 1.8 A pulsed, Tj = 25 °C 16 V BSP295 par.: ID = 3.9 A, VDD = 25 V, RGS = 25 W mJ 12 40 V GS E AS 10 30 8 6 20 0.2 VDS max 4 0.5 VDS max 10 2 0.8 VDS max 0 20 40 60 80 100 120 °C 160 0 0 4 8 12 16 nC 24 Tj QG 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP295 60 V V (BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 °C 180 Tj Page 7 2007-02-07 Rev 1.3 Published by Infineon Technologies AG , Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP295 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2007-02-07