BSP297

Rev. 1.0 BSP297 SIPMOS Ò Small-Signal-Transistor Feature · N-Channel · Enhancement mode · Logic Level · dv/dt rated Product Summary VDS RDS(on) ID 200 1.8 0.66 SOT-223 4 V W A 3 2 1 VPS05163 Type BSP297 Package SOT-223 Ordering Code Q67000-S068 Tape and Reel Information E6327: 3000 pcs/reel Marking BSP297 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA=25°C TA=70°C Value 0.66 0.53 Unit A ID Pulsed drain current TA=25°C ID puls dv/dt VGS Ptot Tj , Tstg 2.64 6 ±20 Class 1 1.8 -55... +150 55/150/56 W °C kV/µs V Reverse diode dv/dt IS=0.66A, V DS=160V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-11-04 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP297 Symbol min. RthJS RthJA 80 48 115 70 Values typ. 15 max. 25 K/W Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, ID=250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 200 0.8 Values typ. 1.4 max. 1.8 Unit V Gate threshold voltage, VGS = VDS ID=400µA Zero gate voltage drain current V DS=200V, VGS=0, Tj=25°C V DS=200V, VGS=0, Tj=150°C µA 10 1 1.2 1 0.1 100 10 3 1.8 nA W Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=4.5V, ID=0.53A Drain-source on-state resistance V GS=10V, ID=0.66A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-11-04 Rev. 1.0 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr V GS=0, IF = I S V R=100V, IF=lS, diF/dt=100A/µs BSP297 Values min. typ. 0.94 286 38 15.7 5.2 3.8 49 19 max. 357 47 23.5 7.8 5.7 74 29 ns S pF Unit Symbol Conditions g fs Ciss Coss Crss td(on) tr td(off) tf Q gs Q gd Qg V DS³2*I D*RDS(on)max, ID=0.53A V GS=0, VDS=25V, f=1MHz 0.47 - V DD=100V, V GS=4.5V, ID=0.6A, RG=15W V DD=160V, ID=0.66A - 0.7 5.2 12.9 2.7 0.9 7.8 16.1 3.3 nC V DD=160V, ID=0.66A, V GS=0 to 10V V(plateau) V DD=160V, ID = 0.66 A IS V TA=25°C - 0.84 52 80 0.66 2.64 1.2 78 120 A V ns nC Page 3 2002-11-04 Rev. 1.0 1 Power dissipation Ptot = f (TA) 1.9 BSP297 BSP297 2 Drain current ID = f (TA) parameter: V GS³ 10 V 0.75 BSP297 W 1.6 A 0.6 1.4 0.55 0.5 Ptot ID °C 1.2 1 0.8 0.6 0.4 0.2 0 0 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 20 40 60 80 100 120 160 0 0 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TA = 25 °C 10 1 BSP297 4 Transient thermal impedance ZthJA = f (tp) parameter : D = t p/T 10 2 tp = 100.0 µs BSP297 A /I D VD S K/W 10 0 1 ms 10 -1 10 ms ZthJA 10 0 R ( DS on ) = 10 1 ID D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -2 DC 10 -1 single pulse 10 -3 0 10 10 1 10 2 V 10 3 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 4 tp 2002-11-04 Rev. 1.0 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS 1.3 BSP297 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS 2.6V W 2.8V 3.4V 3.8V 3.5 4V 4.6V 5V 3 6V 10V 2.5 4.5 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.4 0.8 1.2 1.6 2.8V 2.6V RDS(on) 3.4V 3.8V 4V 1.1 4.6V 1 5V 6V 0.9 10V A ID 2 1.5 1 0.5 0 0 V 2.2 0.2 0.4 0.6 0.8 1 A 1.3 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max parameter: Tj = 25 °C 1.3 8 Typ. forward transconductance g fs = f(ID) parameter: Tj = 25 °C 1.4 A 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 S 1.2 1.1 1 g fs V ID 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 3.5 0 0 0.2 0.4 0.6 0.8 1 A 1.3 VGS Page 5 ID 2002-11-04 Rev. 1.0 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.66 A, VGS = 10 V 8.5 BSP297 BSP297 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS; ID =400µA 2.2 W 7 V 98% 1.8 RDS(on) 6 5 4 3 98% 2 1 0 -60 typ VGS(th) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 2% typ. -20 20 60 100 °C 180 0 -60 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0, f=1 MHz, Tj = 25 °C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 1 BSP297 A pF Ciss 10 0 C 10 2 Coss IF 10 -1 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 V 30 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2002-11-04 Rev. 1.0 13 Typ. gate charge VGS = f (QG ); parameter: VDS , ID = 0.66 A pulsed, Tj = 25 °C 16 V BSP297 BSP297 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) 245 BSP297 V 235 12 V(BR)DSS 0.5 VDS max 230 225 220 215 210 205 200 VGS 10 8 0.2 VDS max 6 0.8 V DS max 4 195 190 185 2 0 0 2 4 6 8 10 12 14 16 nC 20 180 -60 -20 20 60 100 °C 180 QG Tj Page 7 2002-11-04 Rev. 1.0 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP297 Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-11-04