BSP299_09

BSP 299 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.1 ... 4.0 V • Pb-free lead plating; RoHS compliant Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 500 V Pb-free Yes ID 0.4 A RDS(on) 4Ω Package Marking BSP 299 Type BSP 299 SOT-223 BSP299 Tape and Reel Information L6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 °C ID A 0.4 DC drain current, pulsed TA = 25 °C IDpuls 1.6 E AS Avalanche energy, single pulse ID = 1.2 A, RGS = 25 Ω T j = 25 °C mJ 130 V GS P tot Gate source voltage Power dissipation TA = 25 °C ± 20 1.8 V W Rev 2.1 1 2009-03-25 BSP 299 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Therminal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg R thJA R thJS -55 ... + 150 -55 ... + 150 °C ≤ 70 ≤ 25 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 0 °C V (BR)DSS V 500 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 500 V, V GS = 0 V, Tj = 25 °C V DS = 500 V, V GS = 0 V, Tj = 125 °C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance V GS = 10 V, ID = 0.4 A Ω 3.1 4 Rev 2.1 2 2009-03-25 2 BSP 299 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 0.4 A gfs S 0.3 1.2 pF 300 400 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 40 60 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 15 25 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω tr 8 12 Rise time V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω td(off) 15 22 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω tf 55 70 Fall time V DD = 30 V, VGS = 10 V, ID = 0.3 A RGS = 50 Ω - 30 40 Rev 2.1 3 2009-03-25 BSP 299 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TA = 25 °C IS A 0.4 Inverse diode direct current,pulsed TA = 25 °C ISM V SD - 1.6 V Inverse diode forward voltage V GS = 0 V, IF = 0.8 A, Tj = 25 °C trr 0.9 1.2 ns Reverse recovery time V R = 100 V, IF=lS, diF/dt = 100 A/µs Qrr 300 µC Reverse recovery charge V R = 100 V, IF=lS, diF/dt = 100 A/µs - 2.5 - Rev 2.1 4 2009-03-25 BSP 299 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V 0.45 A ID 0.35 0.30 2.0 W Ptot 1.6 1.4 1.2 0.25 1.0 0.20 0.8 0.15 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 °C 160 0.10 0.05 0.00 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 0.05 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Rev 2.1 5 2009-03-25 BSP 299 Typ. output characteristics ID = ƒ(VDS) parameter: V , Tj = 25 °C GS 0.9 j h g e A Ptot = 2W k i 5V f A d 10V l A ID 0.7 0.6 0.5 0.4 0.4 0.8 0.8 0.7 0.7 0.6 0.6 c Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: V , Tj = 25 °C GS 0.9 0.9 13 b 14 a4V Ω13 4.5V 4.5V VGS [V] a b c 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 11 RDS (on) 10 12 11 10 9 4V 4V a d e f g h i j k 9 8 7 6 5 0.5 0.5 8 7 6 5 l j h ic d fg e 10Vk 0.4 0.3 0.3 4.5V b 0.3 0.2 0.2 44 33 22 V 0 GS [V] = a b 4.5 l 0.2 0.1 0.1 0.1 0.0 0 0 0 0 2 2 4 4 6 6 8 8 10 10 12 14 12 V V 14 1 1 4.0 c 5.0 d 5.5 e f 6.0 6.5 g 7.0 h i 7.5 8.0 j 9.0 k l 10.0 20.0 0 0 0.10 0 2 4 6 8 10 12 V 16 0.00 0.1 0.20 0.2 0.30 0.3 0.40 0.4 VDS 0.5 A 0.6 ID ID A 0.60 Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 2.6 A 2.2 I D 2.6 S 2.2 g fs 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 V GS 10 0.0 0.4 0.8 1.2 1.6 A ID 2.2 Rev 2.1 6 2009-03-25 BSP 299 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.4 A, VGS = 10 V 10 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 98% 11 Ω 10 RDS (on) 89 VGS(th) 3.6 3.2 2.8 typ 8 7 7 6 98% 6 55 44 3 2 98% typ 2.4 typ 2.0 1.6 1.2 0.8 0.4 2% 3 2 1 1 0 0 -60 -20 -60 -20 20 20 60 60 100 140 180 100 °C 160 0.0 -60 -20 20 60 100 °C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 1 nF C A IF 10 0 10 0 C iss 10 -1 10 -1 Tj = 25 °C typ C oss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0.0 Crss 10 -2 0 5 10 15 20 25 30 V V DS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Rev 2.1 7 2009-03-25 BSP 299 Avalanche energy EAS = ƒ(Tj) parameter: ID = 1.2 A, VDD = 50 V RGS = 25 Ω, L = 163 mH 140 mJ 120 EAS 110 100 90 80 70 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 600 V 580 570 V(BR)DSS 560 550 540 530 520 60 50 40 30 20 10 0 20 40 60 80 100 120 °C 160 510 500 490 480 470 460 450 -60 -20 20 60 100 °C 160 Tj Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C 0.01, =25° Typ. gate charge VGS=f(Qgate); ID=0.4 A pulsed VDD =200 V 16 V V GS 14 12 10 8 6 4 2 0 0 5 10 15 nC Q gate 20 Rev 2.1 8 2009-03-25 BSP 299 Package outlines SOT-223 Dimensions in mm Rev 2.1 9 2009-03-25 BSP 299 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.1 page 10 2009-03-25