BSP315P

BSP 315 P SIPMOS ® Small-Signal-Transistor Features • P-Channel • Product Summary Drain source voltage Continuous drain current VDS ID 4 -60 0.8 -1.17 V Ω A Enhancement mode Drain-Source on-state resistance RDS(on) • Avalanche rated • Logic Level • dv/dt rated Pin 1 G Pin2/4 D PIN 3 S 2 1 3 VPS05163 Type BSP315 P Package PG-SOT-223 Tape and Reel Information L6327: 1000 pcs/reel Marking BSP315 P Maximum Ratings,at T j = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current Value -1.17 -0.94 Unit A ID T A = 25 °C T A = 70 °C Pulsed drain current ID puls EAS EAR dv/dt -4.68 24 0.18 6 kV/µs mJ T A = 25 °C Avalanche energy, single pulse I D = -1.17 A , V DD = -25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -1.17 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 1.8 -55...+150 55/150/56 V W °C T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.4 Page 1 2007-02-08 BSP 315 P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. max. 25 K/W K/W 115 70 Unit RthJS RthJA - Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -1.5 max. -2 µA -0.1 -10 -10 0.8 0.5 -1 -100 -100 1.4 0.8 nA Ω Ω V Unit V(BR)DSS VGS(th) IDSS -60 -1 VGS = 0 V, I D = -250 µA Gate threshold voltage, VGS = VDS I D = -160 µA Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 °C VDS = -60 V, V GS = 0 V, T j = 125 °C Gate-source leakage current IGSS RDS(on) RDS(on) - VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -4.5 V, I D = -0.89 A Drain-Source on-state resistance VGS = -10 V, I D = -1.17 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.4 Page 2 2007-02-08 BSP 315 P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs Ciss Coss Crss td(on) 0.7 - 1.4 130 40 17 24 160 50 21 36 S pF VDS≤2*I D*RDS(on)max , ID = -0.89 A Input capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Rise time tr - 9 14 VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Turn-off delay time td(off) - 32 48 VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Fall time tf - 19 28 VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18 Ω Rev.1.4 Page 3 2007-02-08 BSP 315 P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Gate to source charge Values typ. max. Unit Qgs Qgd Qg V(plateau) - 0.7 1.8 5.2 -3.14 1.1 2.6 7.8 - nC VDD = -48 V, ID = -1.17 A Gate to drain charge VDD = -48 V, ID = -1.17 A Gate charge total VDD = -48 V, ID = -1.17 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V, ID = -1.17 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. -0.97 30.5 36 max. -1.17 -4.68 -1.3 46 54 Unit IS ISM VSD trr Qrr - A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage V ns µC VGS = 0 V, I F = -1.17 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs Rev.1.4 Page 4 2007-02-08 BSP 315 P Power Dissipation Drain current Ptot = f (TA) BSP 315 P ID = f(TA ) parameter :VGS ≥ −10V BSP 315 P 1.9 -1.3 W 1.6 1.4 A -1.1 -1.0 -0.9 Ptot ID °C 1.2 1.0 0.8 -0.8 -0.7 -0.6 -0.5 0.6 0.4 0.2 0.0 0 -0.4 -0.3 -0.2 -0.1 20 40 60 80 100 120 160 0.0 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T A = 25 °C -10 1 ZthJC = f (tp ) parameter : D = tp /T 10 2 tp = 280.0 µs BSP 315 P BSP 315 P K/W A 1 ms DS /I 10 1 D -10 0 DS ( R 10 ms Z thJC 10 0 D = 0.50 0.20 ID -10 -1 on ) = V 0.10 10 -1 single pulse DC 0.05 0.02 0.01 -10 -2 -1 -10 -10 0 -10 1 V -10 2 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Rev.1.4 Page 5 tp 2007-02-08 BSP 315 P Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) parameter: tp = 80 µs BSP 315 P RDS(on) = f (ID ) parameter: VGS BSP 315 P -2.8 Ptot = 2W j li k g f h e VGS [V] a -2.5 2.6 A -2.4 -2.2 -2.0 Ω 2.2 2.0 a b c d d b c d -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0 RDS(on) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 ID -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 a c e f g h i j k bl e g ih kj lk j f 0.2 -5.0 0.0 0.0 g h i -5.5 -6.0 -6.5 -7.0 l -8.0 -10.0 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -0.4 -0.8 -1.2 -1.6 -2.0 A -2.6 VDS ID Typ. transfer characteristics I D= f ( V GS ) Typ. forward transconductance gfs = f(ID); Tj =25°C parameter: gfs 2.5 VDS≥ 2 x I D x RDS(on)max parameter: tp = 80 µs -3.0 A S ID gfs V -2.0 1.5 -1.5 1.0 -1.0 0.5 -0.5 0.0 0.0 -1.0 -2.0 -3.0 -4.0 -6.0 0.0 0.0 0.5 1.0 1.5 2.0 A 3.0 VGS ID Page 6 Rev.1.4 2007-02-08 BSP 315 P Drain-source on-resistance Gate threshold voltage RDS(on) = f (T j) parameter:I D = -1.17 A, V GS = -10 V BSP 315 P VGS(th) = f (Tj) parameter: VGS = VDS , ID = -160 µA -3.0 Ω 2.1 1.8 1.6 V RDS(on) V GS(th) 98% 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 °C -2.0 typ 98% -1.5 2% typ -1.0 -0.5 -20 20 60 100 180 0.0 -60 -20 20 60 100 Tj 160 °C Tj Typ. capacitances C = f(VDS) Parameter: VGS=0 V, f=1 MHz 10 3 Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs -10 1 BSP 315 P pF A 10 2 Ciss -10 0 C Coss Crss 10 1 -10 -1 IF Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 V -5 -10 -15 -20 -25 -30 -40 -10 -2 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 7 Rev.1.4 2007-02-08 BSP 315 P Avalanche Energy EAS = f (Tj) parameter: ID = -1.17 A , V DD = -25 V RGS = 25 Ω 25 Typ. gate charge VGS = f (QGate ) parameter: ID = -1.17 A pulsed BSP 315 P -16 V mJ -12 E AS VGS 15 -10 -8 10 0,2 VDS max 0,8 VDS max -6 -4 5 -2 0 25 45 65 85 105 125 °C 165 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 nC 8.0 Tj QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP 315 P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 V(BR)DSS -20 20 60 100 °C 180 Tj Rev.1.4 Page 8 2007-02-08 BSP 315 P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.4 Page 9 2007-02-08