BSP316P_07

BSP 316 P SIPMOS Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated Drain pin 2/4 Gate pin1 Source pin 3 Product Summary VDS R DS(on) ID -100 1.8 -0.68 V Ω A PG-SOT223-4-1 Tape and Reel Information Package BSP 316 P PG-SOT223-4-1 L6327: 1000 pcs/reel Type Marking BSP316P Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -0.68 -0.54 Unit A Pulsed drain current TA=25°C ID puls dv/dt VGS Ptot Tj , Tstg -2.72 6 ±20 1.8 -55... +150 55/150/56 kV/µs V W °C Reverse diode dv/dt IS =-0.68A, VDS =-48V, di/dt=-200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.5 Page 1 2007-02-23 BSP 316 P Thermal Characteristics Parameter Characteristics Symbol min. Values typ. max. Unit Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) RthJS RthJA - 15 25 K/W - 80 48 115 70 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -100 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-170µA Zero gate voltage drain current VDS =-100V, VGS =0, Tj =25°C VDS =-100V, VGS =0, Tj =150°C µA -0.1 -10 -10 1.5 1.4 -0.2 -100 -100 2.3 1.8 nA Ω Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-0.61A Drain-source on-state resistance VGS =-10V, ID =-0.68A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.1.5 Page 2 2007-02-23 BSP 316 P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =-80V, ID =-0.68A, VGS =0 to -10V VDD =-80V, ID =-0.68A Symbol Conditions min. Values typ. 1 117 27.7 12 4.7 7.5 67.4 25.9 max. 146 34.5 15 7 11.2 101 38.9 Unit gfs Ciss Coss Crss td(on) tr td(off) tf |VDS|≥2*|ID |*RDS(on)max , ID =-0.54A VGS =0, VDS =-25V, f=1MHz 0.5 - S pF VDD =-50V, VGS=-10V, ID =-0.68A, RG =6Ω ns - -0.2 -1.87 -5.1 -2.7 -0.3 -2.8 -6.4 - nC V(plateau) VDD =-80V, ID =-0.68A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr VGS =0, IF =-0.68A VR =-50V, IF =lS , diF /dt=100A/µs IS TA=25°C - -0.85 44.2 56.3 -0.68 A -2.72 -1.2 55.3 70.4 V ns nC Rev.1.5 Page 3 2007-02-23 BSP 316 P 1 Power dissipation Ptot = f (TA ) 1.9 BSP 316 P 2 Drain current ID = f (TA ) parameter: |VGS | ≥ 10V BSP 316 P -0.75 W 1.6 A -0.6 1.4 -0.55 Ptot ID 20 40 60 80 100 120 1.2 1 0.8 0.6 0.4 0.2 0 0 -0.5 -0.45 -0.4 -0.35 -0.3 -0.25 -0.2 -0.15 -0.1 -0.05 °C 160 0 0 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25°C -10 1 BSP 316 P 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 2 BSP 316 P K/W A tp = 250.0 µs 10 1 D -10 0 1 ms DS =V Z thJA 10 0 D = 0.50 0.20 ID /I -10 -1 R DS (on 10 ms ) 0.10 10 -1 single pulse 0.05 0.02 0.01 DC -10 -2 -10 -1 -10 0 -10 1 -10 2 V -10 3 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Rev.1.5 Page 4 tp 2007-02-23 BSP 316 P 5 Typ. output characteristic ID = f (VDS ) parameter: Tj =25°C, -VGS 2.4 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: Tj =25°C, -VGS 7 RDS(on) -I D A 10V 5V 4.4V 2 3.6V 3.2V 1.8 2.8V 1.6 2.4V 2.2V 1.4 1.2 1 0.8 Ω 5 2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 5V 10V 4 3 2 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 1 V5 -VDS 0 0 0.4 0.8 1.2 1.6 A 2.4 -ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS|≥ 2 x |ID | x RDS(on)max parameter: Tj = 25 °C 3.5 8 Typ. forward transconductance gfs = f(ID) parameter: Tj =25°C 1.8 A S 2.5 -I D 2 0.9 1.5 0.6 1 g fs 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4.5 1.2 0.3 V 0 0 0.4 0.8 1.2 1.6 2 2.4 A 3.2 -VGS Rev.1.5 Page 5 -ID 2007-02-23 BSP 316 P 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -0.68 A, VGS = -10 V 5 BSP 316 P 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.4 Ω 4 V 98% 2 RDS(on) 3.5 3 2.5 2 1.5 1 98% VGS(th) 1.8 1.6 1.4 1.2 1 0.8 2% typ. typ 0.6 0.4 0.5 0 -60 0.2 -20 20 60 100 °C 180 0 -60 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 °C 10 3 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj -10 1 BSP 316 P pF A Ciss 10 2 -10 0 C Coss Crss 10 1 -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -10 -2 0 IF 4 8 12 16 20 24 28 V 36 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 -VDS Rev.1.5 Page 6 VSD 2007-02-23 BSP 316 P 13 Typ. gate charge VGS = f (QGate) parameter: ID = -0.68 A pulsed, Tj = 25 °C -16 V BSP 316 P BSP 316 P 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -120 V -12 V(BR)DSS 0.2 VDS max 0.5 VDS max 0.8 VDS max -114 -112 -110 -108 -106 -104 VGS -10 -8 -6 -102 -100 -4 -98 -96 -94 -92 -2 0 0 1 2 3 4 5 6 7 nC 8.5 -90 -60 -20 20 60 100 °C 180 |Q G| Tj Rev.1.5 Page 7 2007-02-23 BSP 316 P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.5 Page 8 2007-02-23