BSP317P

BSP317P SIPMOS Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated Drain pin 2/4 Product Summary VDS R DS(on) ID -250 4 -0.43 PG-SOT223 4 V Ω A Qualified according to AEC Q101 Gate pin1 Source pin 3 2 1 3 VPS05163 Type BSP317P Package PG-SOT223 Tape and Reel Information L6327: 1000 pcs/reel Marking Packaging BSP317P Non dry Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -0.43 -0.34 A Pulsed drain current TA=25°C ID puls -1.72 Reverse diode dv/dt IS =-0.43A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 -55... +150 55/150/56 °C 2.5 1 Rev.1.6 Page 1 2011­04­19 BSP317P Thermal Characteristics Parameter Characteristics Symbol min. Values typ. max. Unit Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) RthJS RthJA - 15 25 K/W - 80 48 115 70 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -250 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-370µA Zero gate voltage drain current VDS =-250V, VGS =0, Tj =25°C VDS =-250V, VGS =0, Tj =150°C µA -0.1 -10 -10 3.3 3 -0.2 -100 -100 5 4 nA Ω Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-0.39A Drain-source on-state resistance VGS =-10V, ID =-0.43A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.1 Page 2 2011­04­19 BSP317P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =-200V, ID=-0.43A, VGS =0 to -10V VDD =-200V, ID=-0.43A Symbol Conditions min. Values typ. 0.76 210 30 13.4 5.7 11.1 254 67 max. 262 37 16.7 8.5 16.6 381 100 Unit gfs Ciss Coss Crss td(on) tr td(off) tf |VDS|≥2*|ID |*RDS(on)max , 0.38 ID =-0.34A VGS =0, VDS =-25V, f=1MHz S pF - VDD =-30V, VGS=-10V, ID =-0.43A, RG =6Ω ns - -0.5 -4 -11.6 -2.8 -0.65 nC -5.2 -15.1 V V(plateau) VDD =-200V, ID=-0.43A Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr VGS =0, IF =-0.43A VR =-125V, IF =lS , diF /dt=100A/µs IS TA=25°C - -0.84 92 210 -0.43 A -1.72 -1.2 138 315 V ns nC Rev.2.1 Page 3 2011­04­19 BSP317P 1 Power dissipation Ptot = f (TA ) 1.9 BSP 317 P 2 Drain current ID = f (TA ) parameter: |VGS | ≥ 10V -0.5 BSP 317 P W 1.6 A -0.4 1.4 -0.35 Ptot ID 20 40 60 80 100 120 1.2 1 0.8 0.6 0.4 0.2 0 0 -0.3 -0.25 -0.2 -0.15 -0.1 -0.05 0 0 °C 160 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25°C -10 1 BSP 317 P 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 2 BSP 317 P K/W A tp = 140.0 µs 10 1 -10 0 D Z thJA /I ID on ) = V DS 1 ms 10 0 -10 -1 DS ( 10 ms 10 -1 D = 0.50 0.20 10 -2 R 0.10 0.05 -10 -2 DC 10 -3 single pulse 0.02 0.01 -10 -3 -1 -10 -10 0 -10 1 -10 2 V -10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Rev.2.1 Page 4 tp 2011­04­19 BSP317P 5 Typ. output characteristic ID = f (VDS ) parameter: Tj =25°C, -VGS 1.6 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS ; Tj =25°C, -VGS 10 RDS(on) -I D 10V A 5V 4.4V 3.6V 3.2V 1.2 2.8V 2.4V 1 2.2V Ω 8 7 6 5 4 3 2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 5V 10V 0.8 0.6 0.4 2 0.2 1 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0.2 0.4 0.6 0.8 1 1.2 A 1.6 -VDS -ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS|≥ 2 x |ID | x RDS(on)max parameter: Tj = 25 °C 1.6 8 Typ. forward transconductance gfs = f(ID) parameter: Tj =25°C 1.4 S A 1.2 1.1 1.2 1 -I D g fs V 1 0.9 0.8 0.8 0.7 0.6 0.6 0.5 0.4 0.4 0.3 0.2 0.2 0.1 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.6 0 0 0.2 0.4 0.6 0.8 1 1.2 A 1.6 -VGS Rev.2.1 Page 5 -ID 2011­04­19 BSP317P 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -0.43 A, VGS = -10 V 11 BSP 317 P 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.4 Ω 9 V 98% 2 RDS(on) 8 7 6 VGS(th) 1.8 typ. 1.6 1.4 1.2 2% 5 4 3 2 1 0 -60 -20 20 98% 1 0.8 typ 0.6 0.4 0.2 60 100 °C 180 0 -60 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25°C 10 3 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj -10 1 BSP 317 P pF Ciss A 10 2 -10 0 C Coss Crss 10 1 IF -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) -10 -2 0 10 0 0 4 8 12 16 20 24 28 V 36 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 -VDS Rev.2.1 Page 6 VSD 2011­04­19 BSP317P 13 Typ. gate charge VGS = f (QGate) parameter: ID = -0.43 A pulsed, Tj = 25°C -16 V BSP 317 P BSP 317 P 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -300 V -12 V(BR)DSS 20% 50% 80% nC -285 -280 -275 -270 -265 -260 VGS -10 -8 -6 -255 -250 -4 -245 -240 -235 -230 -2 0 0 2 4 6 8 10 12 14 18 -225 -60 -20 20 60 100 °C 180 |Q G| Tj Rev.2.1 Page 7 2011­04­19 BSP317P Rev.2.1 Page 8 2011­04­19