BSP318S

Final data BSP318S SIPMOS ® Small-Signal-Transistor Features • N-Channel • Product Summary Drain source voltage Continuous drain current VDS ID 4 60 0.09 2.6 V Ω A Enhancement mode Drain-Source on-state resistance RDS(on) • Avalanche rated • Logic Level • dv/dt rated 3 2 1 VPS05163 Type BSP318S Package SOT-223 Ordering Code Q67000-S4002 Pin 1 G Pin 2, 4 D PIN 3 S Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Pulsed drain current Value 2.6 10.4 60 2.6 0.18 6 Unit A ID ID puls EAS IAR EAR dv/dt T A = 25 °C Avalanche energy, single pulse mJ A mJ kV/µs I D = 2.6 A, V DD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 2.6 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 1.8 -55... +150 55/150/56 V W °C T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 1999-10-28 Final data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. 17 BSP318S Unit max. K/W RthJS RthJA - - 100 - 70 Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 1.6 max. 2 µA 0.1 10 0.12 0.07 1 100 100 0.15 0.09 nA Ω V Unit V(BR)DSS VGS(th) IDSS 60 1.2 VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 20 µA Zero gate voltage drain current VDS = 60 V, V GS = 0 V, Tj = 25 °C VDS = 60 V, V GS = 0 V, Tj = 150 °C Gate-source leakage current IGSS RDS(on) RDS(on) - VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 2.6 A Drain-Source on-state resistance VGS = 10 V, I D = 2.6 A 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 1999-10-28 Final data Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. BSP318S Unit max. gfs Ciss Coss Crss td(on) 2.4 - 5.5 300 90 50 12 380 120 65 20 S pF VDS≥2*I D*RDS(on)max , ID = 2.6 A Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Rise time tr - 15 25 VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Turn-off delay time td(off) - 20 30 VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Fall time tf - 15 25 VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Page 3 1999-10-28 Final data Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Gate charge at threshold Values typ. BSP318S Unit max. QG(th) Qg(5) Qg V(plateau) - 0.4 7 14 3.6 0.6 10 20 - nC VDD = 40 V, ID = 0.1 A, V = 1 V Gate charge at V GS = 5 V VDD = 40 V, ID = 2.6 A, VGS = 0 to 5 V Gate charge total VDD = 40 V, ID = 2.6 A, VGS = 0 to 10 V Gate plateau voltage V VDD = 40 V , I D = 2.6 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. 0.95 50 0.1 max. 2.6 10.4 1.2 75 0.15 Unit IS ISM VSD trr Qrr - A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage V ns µC VGS = 0 V, I F = 5.2 A Reverse recovery time VR = 30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Page 4 1999-10-28 Final data Power Dissipation Drain current BSP318S Ptot = f (TA) BSP318S ID = f (TA ) BSP318S 1.9 2.8 W 1.6 1.4 A 2.4 2.2 2.0 Ptot ID °C 1.2 1.0 0.8 0.6 1.8 1.6 1.4 1.2 1.0 0.8 0.4 0.2 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 160 0.0 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T A = 25 °C 10 2 ZthJA = f(tp ) parameter : D = tp /T 10 2 BSP318S BSP318S A /I D = tp = 140.0 µs K/W 10 1 ( DS on ) V DS 10 1 ID R 10 0 1 ms Z thJA 10 0 10 ms D = 0.50 0.20 0.10 10 -1 10 -1 single pulse DC 0.05 0.02 0.01 10 -2 -1 10 10 0 10 1 V 10 2 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 5 tp 1999-10-28 Final data Typ. output characteristic BSP318S Typ. transfer characteristics ID = f ( VGS ) I D = f (VDS); T j=25°C parameter: tp = 80 µs BSP318S VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 15 A VGS [V] a 2.0 b c 2.5 3.0 3.5 6.5 Ptot = 1.80W g jf ihe ld k A 5.5 5.0 4.5 c 12 11 10 d e f g h ID ID 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 a b 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 9 8 7 6 5 4 3 2 1 i j k l 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0 0 1 2 3 4 5 6 7 8 V 10 VDS VGS Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : I D = 2.6 A, V GS = 4.5 V BSP318S VGS(th) = f (Tj) parameter: VGS = VDS , ID = 20 µA 3.0 V 0.36 Ω 0.28 2.4 RDS(on) 0.24 0.20 V GS(th) 98% typ 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 max 0.16 0.12 0.08 0.04 0.00 -60 0.6 0.4 0.2 -20 20 60 100 °C typ min 180 0.0 -60 -20 20 60 100 140 °C 200 Tj Page 6 Tj 1999-10-28 Final data Typ. capacitances C = f(V DS) parameter: VGS=0 V, f=1 MHz 10 3 BSP318S Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 2 BSP318S A pF Ciss 10 1 C 10 2 Coss Crss 10 0 IF Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 V 5 10 15 20 25 30 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Avalanche Energy E AS = f (T j) Typ. gate charge parameter: ID = 2.6 A, VDD = 25 V RGS = 25 Ω 65 VGS = f (QGate ) parameter: ID = 2.6 A pulsed BSP318S 16 mJ V 55 50 12 VGS 45 EAS 40 35 10 8 30 25 20 15 10 5 0 20 40 60 80 100 120 °C 0,2 VDS max 6 0,8 VDS max 4 2 160 0 0 4 8 12 16 nC 24 Tj Page 7 QGate 1999-10-28 Final data Drain-source breakdown voltage BSP318S V(BR)DSS = f (Tj) BSP318S 72 V 68 66 64 62 60 58 56 54 -60 V(BR)DSS -20 20 60 100 °C 180 Tj Page 8 1999-10-28 Final data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP318S Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 9 1999-10-28