BSP318S_08

Rev 2.2 BSP318S SIPMOS ® Small-Signal-Transistor Features • N-Channel • Product Summary Drain source voltage Continuous drain current VDS ID 4 60 0.09 2.6 V Ω A Enhancement mode Drain-Source on-state resistance RDS(on) • Avalanche rated • Logic Level • dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Pin 1 G Pin 2, 4 D PIN 3 S 2 1 VPS05163 3 Type BSP318S Package PG-SOT223 Tape and Reel Marking Packaging Non dry L6327: 1000 pcs/r BSP318S Maximum Ratings,at T j = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current Pulsed drain current Value 2.6 10.4 60 2.6 0.18 6 Unit A ID ID puls EAS IAR EAR dv/dt T A = 25 °C Avalanche energy, single pulse mJ A mJ kV/µs I D = 2.6 A, V DD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 2.6 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation VGS Ptot Tj , Tstg ±20 1.8 -55... +150 55/150/56 V W °C T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2008-03-21 Rev 2.2 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. 17 BSP318S Unit max. K/W RthJS RthJA - - 100 - 70 Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 1.6 max. 2 µA 0.1 10 0.12 0.07 1 100 100 0.15 0.09 nA Ω V Unit V(BR)DSS VGS(th) IDSS 60 1.2 VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 20 µA Zero gate voltage drain current VDS = 60 V, V GS = 0 V, Tj = 25 °C VDS = 60 V, V GS = 0 V, Tj = 150 °C Gate-source leakage current IGSS RDS(on) RDS(on) - VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 2.6 A Drain-Source on-state resistance VGS = 10 V, I D = 2.6 A 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2008-03-21 Rev 2.2 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. BSP318S Unit max. gfs Ciss Coss Crss td(on) 2.4 - 5.5 300 90 50 12 380 120 65 20 S pF VDS≥2*I D*RDS(on)max , ID = 2.6 A Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Rise time tr - 15 25 VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Turn-off delay time td(off) - 20 30 VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Fall time tf - 15 25 VDD = 30 V, VGS = 4.5 V, I D = 2.6 A, RG = 16 Ω Page 3 2008-03-21 Rev 2.2 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Gate charge at threshold Values typ. BSP318S Unit max. QG(th) Qg(5) Qg V(plateau) - 0.4 7 14 3.6 0.6 10 20 - nC VDD = 40 V, ID = 0.1 A, V = 1 V Gate charge at V GS = 5 V VDD = 40 V, ID = 2.6 A, VGS = 0 to 5 V Gate charge total VDD = 40 V, ID = 2.6 A, VGS = 0 to 10 V Gate plateau voltage V VDD = 40 V , I D = 2.6 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. 0.95 50 0.1 max. 2.6 10.4 1.2 75 0.15 Unit IS ISM VSD trr Qrr - A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage V ns µC VGS = 0 V, I F = 5.2 A Reverse recovery time VR = 30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Page 4 2008-03-21 Rev 2.2 Power Dissipation Drain current BSP318S Ptot = f (TA) BSP318S ID = f (TA ) BSP318S 1.9 2.8 W 1.6 1.4 A 2.4 2.2 2.0 Ptot ID °C 1.2 1.0 0.8 0.6 1.8 1.6 1.4 1.2 1.0 0.8 0.4 0.2 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 160 0.0 0 20 40 60 80 100 120 °C 160 TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T A = 25 °C 10 2 ZthJA = f(tp ) parameter : D = tp /T 10 2 BSP318S BSP318S A /I D = tp = 140.0 µs K/W 10 1 ( DS on ) V DS 10 1 ID R 10 0 1 ms Z thJA 10 0 10 ms D = 0.50 0.20 0.10 10 -1 10 -1 single pulse DC 0.05 0.02 0.01 10 -2 -1 10 10 0 10 1 V 10 2 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 5 tp 2008-03-21 Rev 2.2 Typ. output characteristic BSP318S Typ. transfer characteristics ID = f ( VGS ) I D = f (VDS); T j=25°C parameter: tp = 80 µs BSP318S VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 15 A VGS [V] a 2.0 b c 2.5 3.0 3.5 6.5 Ptot = 1.80W g jf ihe ld k A 5.5 5.0 4.5 c 12 11 10 d e f g h ID ID 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 a b 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 9 8 7 6 5 4 3 2 1 i j k l 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0 0 1 2 3 4 5 6 7 8 V 10 VDS VGS Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) parameter : I D = 2.6 A, V GS = 4.5 V BSP318S VGS(th) = f (Tj) parameter: VGS = VDS , ID = 20 µA 3.0 V 0.36 Ω 0.28 2.4 RDS(on) 0.24 0.20 V GS(th) 98% typ 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 max 0.16 0.12 0.08 0.04 0.00 -60 0.6 0.4 0.2 -20 20 60 100 °C typ min 180 0.0 -60 -20 20 60 100 140 °C 200 Tj Page 6 Tj 2008-03-21 Rev 2.2 Typ. capacitances C = f(V DS) parameter: VGS=0 V, f=1 MHz 10 3 BSP318S Forward characteristics of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 2 BSP318S A pF Ciss 10 1 C 10 2 Coss Crss 10 0 IF Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 V 5 10 15 20 25 30 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Avalanche Energy E AS = f (T j) Typ. gate charge parameter: ID = 2.6 A, VDD = 25 V RGS = 25 Ω 65 VGS = f (QGate ) parameter: ID = 2.6 A pulsed BSP318S 16 mJ V 55 50 12 VGS 45 EAS 40 35 10 8 30 25 20 15 10 5 0 20 40 60 80 100 120 °C 0,2 VDS max 6 0,8 VDS max 4 2 160 0 0 4 8 12 16 nC 24 Tj Page 7 QGate 2008-03-21 Rev 2.2 Drain-source breakdown voltage BSP318S V(BR)DSS = f (Tj) BSP318S 72 V 68 66 64 62 60 58 56 54 -60 V(BR)DSS -20 20 60 100 °C 180 Tj Page 8 2008-03-21 Rev 2.2 BSP318S Page 9 2008-03-21