BSP319

BSP 319 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 1.2 ...2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 50 V ID 3.8 A RDS(on) 0.07 Ω Package Marking BSP 319 Type BSP 319 SOT-223 BSP 319 Ordering Code Q67000-S273 Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 29 ˚C ID A 3.8 DC drain current, pulsed TA = 25 ˚C IDpuls 15 EAS Avalanche energy, single pulse ID = 3.8 A, VDD = 25 V, RGS = 25 Ω L = 6.2 mH, Tj = 25 ˚C mJ 90 VGS Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA = 25 ˚C ± 20 Class 1 V Ptot W 1.8 Data Sheet 1 05.99 BSP 319 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Tj Tstg RthJA R thJS -55 ... + 150 -55 ... + 150 ˚C ≤ 70 ≤ 10 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C V (BR)DSS V 50 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 1.2 IDSS 1.6 2 µA Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = 25 ˚C VDS = 50 V, VGS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance VGS = 5 V, ID = 2.4 A Ω 0.06 0.07 Data Sheet 2 05.99 BSP 319 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 2.4 A gfs S 3 8 pF 750 1000 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 240 360 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 120 180 ns Turn-on delay time VDD = 30 V, VGS = 5 V, ID = 0.3 A RGS = 50 Ω tr 20 30 Rise time VDD = 30 V, VGS = 5 V, ID = 0.3 A RGS = 50 Ω td(off) 55 85 Turn-off delay time VDD = 30 V, VGS = 5 V, ID = 0.3 A RGS = 50 Ω tf 210 260 Fall time VDD = 30 V, VGS = 5 V, ID = 0.3 A RGS = 50 Ω - 120 160 Data Sheet 3 05.99 BSP 319 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Reverse Diode Inverse diode continuous forward current TA = 25 ˚C IS A 3.8 Inverse diode direct current,pulsed TA = 25 ˚C ISM V SD - 15 V Inverse diode forward voltage VGS = 0 V, IF = 7.6 A, Tj = 25 ˚C trr 0.95 1.3 ns Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 50 µC Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs - 0.07 - Data Sheet 4 05.99 BSP 319 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 5 V 4.0 A 2.0 W Ptot 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 ˚C 160 ID 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 20 40 60 80 100 120 ˚C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25˚C Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T 10 2 K/W 10 1 ZthJA 10 0 10 -1 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 10 -2 0.05 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Data Sheet 5 05.99 BSP 319 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 ˚C 9 A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 0.22 Ptot = 2W h k j l g e id c f Ω VGS [V] a 2.0 b c 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 a ID 7 6 5 4 3 2 0.18 RDS (on) 0.16 0.14 0.12 0.10 0.08 0.06 0.04 j b kif g d ce h d e f bg h i j k l 1 0 VGS [V] = a 0.02 0.00 V 5.0 a 2.5 2.0 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0 VDS ID Typ. transfer characteristics ID = f(V GS) parameter: tp = 80 µs Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, 20 A ID 14 S 12 16 14 12 gfs 11 10 9 8 10 8 6 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V VGS 7 6 5 4 3 2 1 0 5.0 0 2 4 6 8 10 12 14 A ID 18 Data Sheet 6 05.99 BSP 319 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 2.4 A, VGS = 5 V 0.17 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 0.14 RDS (on) 0.12 0.10 VGS(th) 3.6 3.2 2.8 98% 0.08 0.06 0.04 2.4 typ 98% 2.0 typ 1.6 2% 1.2 0.8 0.02 0.00 -60 -20 20 60 100 ˚C 160 0.4 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C A IF 10 0 Ciss 10 1 Coss 10 -1 Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSP 319 Avalanche energy EAS = ƒ(Tj) parameter: ID = 3.8 A, VDD = 25 V RGS = 25 Ω, L = 6.2 mH 100 mJ Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 60 V 58 EAS 80 70 60 50 40 30 20 10 0 20 40 60 80 100 120 ˚C 160 V(BR)DSS 57 56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 ˚C 160 Tj Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25˚C Data Sheet 8 05.99