BSP320

SIPMOS® Small-Signal-Transistor Features • N channel • BSP 320S VDS RDS(on) ID 4 Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current 60 0.12 2.9 V Ω A Enhancement mode • Avalanche rated • dv/dt rated 3 2 1 VPS05163 Type BSP320S Package SOT-223 Ordering Code Q67000-S4001 Pin 1 G Pin 2/4 D Pin 3 S Maximum Ratings , at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Pulsed drain current Symbol Value 2.9 11.6 60 2.9 0.18 6 mJ A mJ kV/µs Unit A ID IDpulse EAS IAR EAR dv/dt T A = 25 ˚C Avalanche energy, single pulse I D = 2.9 A, V DD = 25 V, R GS = 25 Ω Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 2.9 A, V DS = 20 V, di/dt = 200 A/µs, T jmax = 150 ˚C Gate source voltage Power dissipation VGS Ptot Tj Tstg ±20 1.8 -55 ... +150 -55 ... +150 55/150/56 V W ˚C T A = 25 ˚C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 BSP 320S Electrical Characteristics Parameter at Tj = 25 ˚C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. 17 110 max. 70 K/W K/W Unit RthJS RthJA - Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) IDSS 60 2.1 3 4 V VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 20 µA Zero gate voltage drain current µA 0.1 10 0.09 1 100 100 0.12 nA Ω VDS = 60 V, V GS = 0 V, T j = 25 ˚C VDS = 60 V, V GS = 0 V, T j = 150 ˚C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, I D = 2.9 A 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSP 320S Electrical Characteristics Parameter at Tj = 25 ˚C, unless otherwise specified Dynamic Characteristics Transconductance Symbol min. Values typ. 5.8 275 90 50 11 max. 340 120 65 17 ns S pF Unit g fs Ciss Coss Crss td(on) 2.5 - VDS≥2*ID*RDS(on)max , ID = 2.9 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω Rise time tr - 25 40 VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω Turn-off delay time td(off) - 25 40 VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω Fall time tf - 35 55 VDD = 30 V, VGS = 10 V, ID = 2.9 A, RG = 33 Ω Data Sheet 3 05.99 BSP 320S Electrical Characteristics Parameter at Tj = 25 ˚C, unless otherwise specified Dynamic Characteristics Gate charge at threshold Symbol min. Values typ. 0.25 7.4 9.7 4.7 max. 0.3 9.3 12 V nC nC Unit QG(th) Qg(7) Qg V(plateau) - VDD = 40 V, ID = 0.1 A, VGS = 1 V Gate charge at Vgs=7V VDD = 40 V, ID = 2.9 A, VGS = 0 to 7 V Gate charge total VDD = 40 V, ID = 2.9 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 2.9 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 0.95 45 0.08 2.9 11.6 1.2 56 0.12 A TA = 25 ˚C Inverse diode direct current,pulsed TA = 25 ˚C Inverse diode forward voltage V ns µC VGS = 0 V, I F = 5.8 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/µs Data Sheet 4 05.99 BSP 320S Power Dissipation Drain current Ptot = f (TA) BSP320S ID = f (TA ) BSP320S 1.9 W 3.2 A 1.6 1.4 2.4 Ptot 1.0 0.8 ID ˚C 1.2 2.0 1.6 1.2 0.6 0.8 0.4 0.2 0.0 0 0.4 20 40 60 80 100 120 160 0.0 0 20 40 60 80 100 120 ˚C 160 Safe operating area TA Transient thermal impedance TA ID = f ( V DS ) parameter : D = 0 , TA = 25 ˚C 10 A 2 BSP320S ZthJA = f(tp ) parameter : D = tp /T 10 2 BSP320S K/W /ID 10 1 = V DS tp = 130.0 µs 10 1 ID 1 ms ZthJA 10 0 RD S( ) on 10 0 10 ms D = 0.50 0.20 0.10 10 -1 10 -1 single pulse 0.05 0.02 0.01 DC 10 -2 -1 10 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 4 10 0 10 1 V 10 2 s 10 VDS tp Data Sheet 5 05.99 BSP 320S Typ. output characteristics Drain-source on-resistance ID = f (VDS) parameter: tp = 80 µs lBSP320S RDS(on) = f (Tj ) parameter : ID = 2.9 A, VGS = 10 V BSP320S 7.0 A Ptot = 2W 0.30 Ω k h j g id 6.0 fe 5.5 5.0 c VGS [V] a 4.0 0.24 c d e f g h i 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 RDS(on) b 4.5 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 ID 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 a b 98% typ j k l 0.04 0.02 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 0.00 -60 -20 20 60 100 ˚C 180 VDS Tj Data Sheet 6 05.99 BSP 320S Typ. transfer characteristics I D= f ( VGS ) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 14 Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS , ID = 20 µA 5.2 V A 4.4 4.0 VGS(th) 10 3.6 3.2 2.8 ID 8 6 2.4 2.0 max 4 1.6 1.2 typ 2 0.8 0.4 min 0 0 1 2 3 4 5 V 7 0.0 -60 -20 20 60 100 140 V 200 VGS Tj Typ. capacitances Forward characteristics of reverse diode C = f(VDS) Parameter: VGS=0 V, f=1 MHz 10 3 IF = f (VSD ) parameter: Tj , tp = 80 µs 10 2 BSP320S A pF Cis 10 1 C 10 2 C os Crs 10 0 IF Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 V 35 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS VSD Data Sheet 7 05.99 BSP 320S Avalanche Energy EAS = f (Tj) parameter: ID = 2.9 A,VDD = 25 V Typ. gate charge VGS = f (QGate ) parameter: ID puls =2.9A BSP320S RGS = 25 Ω 65 mJ 16 V 55 50 45 12 VGS EAS 40 35 10 8 30 25 20 15 10 5 0 20 40 60 80 100 120 ˚C 0,2 VDS max 0,8 VDS max 6 4 2 160 0 0 2 4 6 8 10 12 Tj nC 15 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSP320S 72 V 68 66 64 62 60 58 56 54 -60 V(BR)DSS -20 20 60 100 ˚C 180 Tj Data Sheet 8 05.99