BSP322P

BSP322P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID -100 800 -1 V mΩ A PG-SOT-223 Type BSP322P Package PG-SOT-223 Tape and Reel Information L6327: 1000 pcs/reel Marking BSP322P Lead free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=70 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg JESD22-A114-HBM T C=25 °C T C=25 °C I D=-1 A, R GS=25 Ω Value 1 0.8 4 57 ±20 1.8 -55 ... 150 1A (250V to 500V) 260 °C 55/150/56 mJ V W °C Unit A Rev 1.04 page 1 2011-04-05 BSP322P Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient minimal footprint, steady state 6 cm2 cooling area1), steady state Values typ. max. Unit R thJA - - 115 K/W - - 70 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=-250 μA V GS(th) I DSS V DS=V GS,I D=-380 µA V DS=-100 V, V GS=0 V, T j=25 °C V DS=-100 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-10 V, I D=-1 A V GS=-4.5 V, I D=-0.93 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-0.8 A -100 -2.0 -1.5 -0.1 -1.0 -1 µA V - -10 -10 600 808 -100 -100 800 1000 nA mΩ 0.7 1.4 - S 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Rev 1.04 page 2 2011-04-05 BSP322P Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr V R=50 V, I F=|I S|, di F/dt =100 A/µs V GS=0 V, I F=-1 A, T j=25 °C T C=25 °C 0.84 47 84 -1.0 -4.0 1.2 V ns nC A Q gs Q gd Qg V plateau V DD=-80 V, I D=-1 A, V GS=0 to -10 V 0.8 4.3 12.4 2.9 1.0 6.4 16.5 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-50 V, V GS=10 V, I D=-1 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 280 70 34 4.6 4.3 21.2 8.3 372 94 51 6.9 6.5 31.8 12.5 ns pF Values typ. max. Unit 2) See figure 16 for gate charge parameter definition Rev 1.04 page 3 2011-04-05 BSP322P 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); |V GS|≥10 V 2 1.2 1 1.5 0.8 P tot [W] -I D [A] 1 0.6 0.4 0.5 0.2 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 101 limited by on-state resistance 100 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 102 0.5 0.2 100 1 ms 101 0.1 Z thJS [K/W] -I D [A] 0.05 10 ms 0.02 10-1 100 ms 100 0.01 single pulse DC 10-2 10 0 10-1 10 1 10 2 10 3 10-5 10-4 10-3 10-2 10-1 100 101 102 -V DS [V] t p [s] Rev 1.04 page 4 2011-04-05 BSP322P 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 4 -10 V -7 V -5 V -4 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 1.6 -3 V 1.4 -3.5 V -4 V 3 1.2 -3.5 V 1 R DS(on) [Ω ] -I D [A] 2 0.8 -5 V -7 V -3 V 0.6 -10 V 1 0.4 0.2 0 0 2 4 6 8 10 0 0 1 2 3 4 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 4 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 3 3 2 25 °C 125 °C -I D [A] 2 g fs [S] 1 0 4 5 0 1 0 0 1 2 3 1 2 3 4 -V GS [V] -I D [A] Rev 1.04 page 5 2011-04-05 BSP322P 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-1 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-380 µA 2 3 1.5 2 max. R DS(on) [Ω ] 98 % -V GS(th) [V] 1 typ. min. 1 0.5 typ. 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 10 25 °C, typ Ciss 150 °C, typ 1 150 °C, 98% C [pF] 102 I F [A] 25 °C, 98% Coss 0.1 Crss 101 0 20 40 60 80 100 0.01 0 0.5 1 1.5 -V DS [V] -V SD [V] Rev 1.04 page 6 2011-04-05 BSP322P 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 10 14 Typ. gate charge V GS=f(Q gate); I D=-1 A pulsed parameter: V DD 12 50 V 10 20 V 80 V 8 1 25 °C 100 °C 125 °C - VGS [V] 1000 -I AV [A] 6 4 2 0.1 1 10 100 0 0 5 10 15 t AV [µs] - Qgate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 16 Gate charge waveforms 120 V GS 115 Qg 110 105 -V BR(DSS) [V] 100 95 90 85 80 V g s(th) Q g(th) 75 70 -60 -20 20 60 100 140 180 Q sw Q gs Q gd Q g ate T j [°C] Rev 1.04 page 7 2011-04-05 BSP322P Package Outline: PG-SOT-223 Footprint: Packaging: Dimensions in mm Rev 1.04 page 8 2011-04-05 BSP322P Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.04 page 9 2011-04-05