BSP372_08

BSP372 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 0.8 ...2.0 V • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 100 V ID 1.7 A RDS(on) 0.31 Ω Tape and Reel Information L6327: 1000 pcs/reel Marking BSP372 Packaging Non dry BSP372 Type BSP372 Package PG-SOT223 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 28 ˚C ID A 1.7 DC drain current, pulsed TA = 25 ˚C IDpuls 6.8 EAS Avalanche energy, single pulse ID = 1.7 A, VDD = 25 V, RGS = 25 Ω L = 23.3 mH, Tj = 25 ˚C mJ 45 VGS Vgs Ptot Gate source voltage Gate-source peak voltage,aperiodic Power dissipation TA = 25 ˚C ± 14 ± 20 V W 1.8 Rev 2.0 1 2008-03-31 BSP372 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS -55 ... + 150 -55 ... + 150 ˚C ≤ 70 ≤ 10 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C V (BR)DSS V 100 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 0.8 IDSS 1.4 2 µA Zero gate voltage drain current VDS = 100 V, V GS = 0 V, Tj = 25 ˚C VDS = 100 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance VGS = 5 V, ID = 1.7 A Ω 0.24 0.31 Rev 2.0 2 2008-03-31 BSP372 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 1.7 A gfs S 2 3.7 pF 415 520 Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss Crss 80 100 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz td(on) 50 65 ns Turn-on delay time VDD = 30 V, VGS = 5 V, ID = 0.3 A RG = 50 Ω tr 20 30 Rise time VDD = 30 V, VGS = 5 V, ID = 0.3 A RG = 50 Ω td(off) 35 55 Turn-off delay time VDD = 30 V, VGS = 5 V, ID = 0.3 A RG = 50 Ω tf 110 165 Fall time VDD = 30 V, VGS = 5 V, ID = 0.3 A RG = 50 Ω - 50 75 Rev 2.0 3 2008-03-31 BSP372 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Reverse Diode Inverse diode continuous forward current TA = 25 ˚C IS A 1.7 Inverse diode direct current,pulsed TA = 25 ˚C ISM V SD - 6.8 V Inverse diode forward voltage VGS = 0 V, IF = 1.7 A trr 0.85 1.1 ns Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs Qrr 65 µC Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs - 0.11 - Rev 2.0 4 2008-03-31 BSP372 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 5 V 1.8 A 2.0 W Ptot 1.6 1.4 ID 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 ˚C 160 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 ˚C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25˚C Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T 10 2 K/W 10 1 ZthJA 10 0 10 -1 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 10 -2 0.05 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Rev 2.0 5 2008-03-31 BSP372 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 3.8 A 3.2 k l j h Ptot = 2W g i fe d Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 1.0 c VGS [V] a 2.0 b c 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 Ω RDS (on) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VGS [V] = a 2.5 2.0 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 a ID 2.8 2.4 2.0 1.6 1.2 0.8 0.4 d e f g h i b j k l b c d feg h k i j h i 7.0 8.0 j 9.0 k 10.0 0.0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 A 1.4 VDS ID Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max 6.5 A 5.5 ID parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 6.5 S 5.5 gfs 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 V VGS 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 10 0.0 0.0 1.0 2.0 3.0 4.0 A ID 6.0 Rev 2.0 6 2008-03-31 BSP372 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 1.7 A, VGS = 5 V 1.0 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω RDS (on) 0.8 0.7 0.6 0.5 0.4 0.3 VGS(th) 3.6 3.2 2.8 2.4 98% 98% typ 2.0 1.6 1.2 typ 0.2 0.1 0.0 -60 2% 0.8 0.4 -20 20 60 100 ˚C 160 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 4 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 1 pF C A IF 10 3 10 0 Ciss 10 2 Coss Crss 10 -1 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Rev 2.0 7 2008-03-31 BSP372 Avalanche energy EAS = ƒ(Tj) parameter: ID = 1.7 A, VDD = 25 V RGS = 25 Ω, L = 23.3 mH 50 mJ Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 120 V 116 EAS 40 35 30 25 20 15 10 5 0 20 V(BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 40 60 80 100 120 ˚C 160 -20 20 60 100 ˚C 160 Tj Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25˚C Rev 2.0 8 2008-03-31 BSP372 Rev 2.0 9 2008-03-31