BSP452_07

Smart High-Side Power Switch BSP452 • High-side switch • Short-circuit protection • Input protection • Overtemperature protection with hysteresis • Overload protection • Overvoltage protection • Switching inductive load • Clamp of negative output voltage with inductive loads • Undervoltage shutdown • Maximum current internally limited • Electrostatic discharge (ESD) protection 1 • Reverse battery protection ) • AEC qualified Package: SOT (RoHS compliant) • Green product223 Type Ordering code Q67000-S271 SOT-223 1 SOT-223 PG-SOT-223 BSP 452 Application • µC compatible power switch for 12 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions. Blockdiagramm: + Vbb 4 Voltage source ESDDiode Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Limit for unclamped ind. loads OUT Rectifier Temperature sensor 1 3 R IN in Load ESD Logic GND miniPROFET Load GND 2 Signal GND 1) With resistor RGND=150 Ω in GND connection, resistor in series with IN connections reverse load current limited by connected load. Data Sheet 1 V1.0, 2007-05-25 Smart High-Side Power Switch BSP452 Pin 1 2 3 4 Symbol OUT GND IN Vbb O I + Function Output to the load Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage Load current self-limited 2) Maximum input voltage Maximum input current Inductive load switch-off energy dissipation, IL = 0.5A , TA = 150°C single pulse (not tested, specified by design) Load dump protection3) VLoadDump=UA+Vs RL= 24Ω RI=2Ω , td=400ms, IN= low or high, UA=13,5V RL= 80Ω (not tested, specified by design) Electrostatic discharge capability (ESD)5) PIN 3 PIN 1,2,4 Operating temperature range Storage temperature range 6 Max. power dissipation (DC) ) Thermal resistance Symbol Vbb IL VIN IIN EAS Values 40 Unit V A V mA J IL(SC) -5.0...Vbb ±5 0.5 VLoad dump4) 60 80 ±1 ±2 -40 ...+150 -55 ...+150 1.8 7 70 V VESD Tj Tstg Ptot RthJS RthJA kV °C W K/W TA = 25 °C chip - soldering point: chip - ambient:6) 2) 3) At VIN > Vbb, the input current is not allowed to exceed ±5 mA. Supply voltages higher than Vbb(AZ) require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection A resistor for the protection of the input is integrated. 4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) HBM according to MIL-STD 883D, Methode 3015.7 6) BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection Data Sheet 2 V1.0, 2007-05-25 Smart High-Side Power Switch BSP452 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 13.5V unless otherwise specified Symbol min Values typ Unit max Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 0.5 A, Vin = high Tj = 25°C Tj = 150°C 7) Nominal load current (pin 4 to 1) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 °C Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 24 Ω Slew rate on 10 to 30% VOUT, RL = 24 Ω Slew rate off 70 to 40% VOUT, RL = 24 Ω RON IL(ISO) --0.7 0.16 --- 0.2 0.4 -- Ω A ton toff dV /dton -dV/dtoff ----- 60 60 2 2 100 150 4 4 µs V/µs V/µs Input Allowable input voltage range, (pin 3 to 2) Input turn-on threshold voltage Tj = -40...+150°C Input turn-off threshold voltage Tj = -40...+150°C Input threshold hysteresis Off state input current (pin 3) VIN(off) = 1.2 V Tj = -40...+150°C On state input current (pin 3) VIN(on) = 3.0 V to Vbb Tj = -40...+150°C Input resistance VIN VIN(T+) VIN(T-) -3.0 -1.5 -10 10 1.5 ---0.5 --2.8 Vbb 3.5 --60 100 3.5 V V V V µA µA kΩ ∆VIN(T) IIN(off) IIN(on) RIN 7) IL(ISO) is limited by current limitation, see IL(SC), next page Data Sheet 3 V1.0, 2007-05-25 Smart High-Side Power Switch BSP452 Parameter and Conditions at Tj = 25 °C, Vbb = 13.5V unless otherwise specified Symbol min Values typ Unit max Operating Parameters Operating voltage8) Undervoltage shutdown Undervoltage restart Tj =-40...+150°C Tj =-40...+150°C Tj =-40...+25°C Tj =+150°C Undervoltage restart of charge pumpe 7 see diagram page 7 Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C Overvoltage restart Tj =-40...+150°C Overvoltage hysteresis Tj =-40...+150°C Standby current (pin 4), Vin = low Tj =-40...+150°C Operating current (pin 2), Vin = 5 V leakage current (pin 1) Vin = low Tj =-40...+25°C Tj =150°C Protection Functions Current limit (pin 4 to 1) Tj = 25°C Vbb = 20V Tj = -40...+150°C Overvoltage protection Ibb=4mA Tj =-40...+150°C Output clamp (ind. load switch off) at VOUT=Vbb-VON(CL), Ibb = 4mA Thermal overload trip temperature Thermal hysteresis 9 Inductive load switch-off energy dissipation ) Tj Start = 150 °C, single pulse, IL = 0.5 A, Vbb = 12 V (not tested, specified by design) 10 Reverse battery (pin 4 to 2) ) (not tested, specified by design) Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) ∆Vbb(under) 5.0 3.5 ---34 33 ----- ---5.6 0.3 --0.7 10 1 2 34 5 6.5 7.0 7 -42 --25 1.6 5 7 V V V V V V V V µA mA µA Vbb(over) Vbb(o rst) ∆Vbb(over) Ibb(off) IGND IL(off) IL(SC) Vbb(AZ) VON(CL) Tjt ∆Tjt EAS 0.7 0.7 41 41 150 --- 1.5 --47 -10 -- 2 2.4 ----0.5 A V V °C K J -Vbb -- -- 30 V 8) 9) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx. 2 V EAS= 1/2 * L * IL * (V ON(CL) ) ON(CL) - Vbb 10) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Data Sheet 4 V1.0, 2007-05-25 Smart High-Side Power Switch BSP452 Max. allowable power dissipation Ptot = f (TA,TSP) Ptot [W] 18 16 14 12 TSP 10 Current limit characteristic IL(SC) = f (Von); (Von see testcircuit) IL(SC) [A] 2 1.8 1.6 1.4 1.2 1 150°C 25°C -40°C 8 0.8 6 0.6 4 TA 2 0 0 25 50 75 100 125 150 0.4 0.2 0 0 2 4 6 8 10 12 14 TA, TSP[°C] Von [V] On state resistance (Vbb-pin to OUT-pin) RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A RON [Ω] 0.4 0.35 0.3 Typ. input current IIN = f (VIN); Vbb = 13,5 V IIN [µA] 50 -40°C 45 40 35 + 25°C 0.25 0.2 0.15 0.1 98% 30 25 20 15 10 +150°C 0.05 0 -50 -25 0 25 50 75 100 125 150 5 0 0 2 4 6 8 10 12 14 Tj [°C] VIN [V] Data Sheet Data Book 5 5 V1.0, 2007-05-25 20 08 96 Smart High-Side Power Switch BSP452 Typ. operating current IGND = f (Tj); Vbb = 13,5 V; VIN = high IGND [mA] 0.8 0.7 0.6 Typ. overload current IL(lim) = f (t); Vbb = 13,5 V, no heatsink, Param.: Tjstart IL(lim) [A] 1.4 1.2 1 0.5 0.8 0.4 0.6 +150°C +25°C -40°C 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 0.4 0.2 0 -50 0 50 100 150 200 250 300 350 400 Tj [°C] t [ms] Typ. standby current Ibb(off) = f (Tj); Vbb = 13,5 V; VIN = low Ibb(off) [µA] 8 7 6 Short circuit current IL(SC) = f (Tj); Vbb = 13,5 V IL(SC) [A] 1.4 1.2 1 5 0.8 4 0.6 3 2 1 0 -50 -25 0 25 50 75 100 125 150 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 Tj [°C] Tj [°C] Data Sheet 6 V1.0, 2007-05-25 Smart High-Side Power Switch BSP452 Typ. input turn on voltage threshold VIN(T+) = f (Tj); VIN(T+) [V] 3 13V 2.5 Figure 6: Undervoltage restart of charge pumpe VON [V] 2 1.5 V bb(over) V 1 bb(o rs t) V bb(u rs t) 0.5 V V bb(under) bb(u c p) 0 -50 -25 0 25 50 75 100 125 150 Tj [°C] Vbb [V] charge pump starts at Vbb(ucp) about 7 V typ. Typ. on-state resistance (Vbb-Pin to Out-Pin) RON = f (Vbb,IL); IL=0.5A, Tj = 25°C RON [mΩ] 300 Test circuit 250 200 150 100 50 0 0 5 10 15 20 25 Vbb [V] Data Sheet 7 V1.0, 2007-05-25 Smart High-Side Power Switch BSP452 Package Outlines A 6.5 ±0.2 3 ±0.1 0.1 max 1.6 ±0.1 B 7 ±0.3 15˚max 4 1 0.7 ±0.1 2 3 2.3 4.6 0.5 min 0.28 ±0.04 0.25 M A 0.25 M B Figure 1 PG-SOT-223 (Plastic Dual Small Outline Package) (RoHS-compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Data Sheet 8 3.5 ±0.2 +0.2 acc. to DIN 6784 Dimensions in mm V1.0, 2007-05-25 Smart High-Side Power Switch BSP452 Revision History Version 1.0 Date 2007-05-25 Changes Creation of the green datasheet. First page : Adding the green logo and the AEC qualified Adding the bullet AEC qualified and the RoHS compliant features Package page Modification of the package to be green. Data Sheet 9 V1.0, 2007-05-25 Edition 2007-05-25 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 5/29/07. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). 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