BSP50

BSP50 ... BSP52 NPN Silicon Darlington Transistors High collector current Low collector-emitter saturation voltage Complementary types: BSP60 ... BSP62 (PNP) 4 Type BSP50 BSP51 BSP52 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation , TS = 124 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point 1) RthJS


3 2 1 VPS05163 Marking BSP 50 BSP 51 BSP 52 1=B 1=B 1=B Pin Configuration 2=C 2=C 2=C 3=E 3=E 3=E 4=C 4=C 4=C Package SOT223 SOT223 SOT223 Symbol VCEO VCBO VEBO IC ICM IB Ptot Tj Tstg BSP50 45 60 5 BSP51 60 80 5 1 2 100 1.5 150 -65 ... 150 BSP52 80 90 5 Unit V A mA W °C
17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BSP50 ... BSP52 Electrical Characteristics at TA = 25°C, unless othertwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 V(BR)CEO Symbol min. Values typ. max. Unit V 45 60 80 - BSP50 BSP51 BSP52 V(BR)CBO Collector-base breakdown voltage IC = 100 µA, IE = 0 BSP50 BSP51 BSP52 60 80 90 V(BR)EBO ICES IEBO h FE - 10 10 µA Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff current VCE = VCEOmax , VBE = 0 Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Collector-emitter saturation voltage1) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA 5 - 1000 2000 VCEsat - V 1.3 1.8 1.9 2.2 VBEsat - AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz Turn-on time IC = 500 mA, IB1 = IB2 = 0.5mA Turn-off time IC = 500 mA, IB1 = IB2 = 0.5mA 1) Pulse test: t ≤ 300µs, D = 2% fT t(on) t(off) - 200 400 1500 - MHz ns 2 Nov-30-2001 BSP50 ... BSP52 Switching time test circuit Switching time waveform 1) Pulse test: t ≤ 300µs, D = 2% 3 Nov-30-2001 BSP50 ... BSP52 Total power dissipation Ptot = f(TS) External resistance R BE = f (TA)** VCB = V CEmax ** RBEmax for thermal stability 10 7 R BE Ω 5 BSP 50...52 EHP00660 1650 mW 1350 1200 P tot 1050 900 750 600 450 300 150 0 0 15 30 45 60 75 90 105 120 10 6 5 °C 150 TS 10 5 0 50 100 ˚C TA 150 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BSP 50...52 EHP00943 DC current gain hFE = f (I C) VCE = 10V 10 5 h FE T BSP 50...52 EHP00661 tp D= T tp 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 4 5 10 3 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 10 tp -1 s 10 0 10 2 10 1 10 2 10 3 mA 10 4 ΙC 4 Nov-30-2001 BSP50 ... BSP52 Collector-emitter saturation voltage IC = f (VCEsat ), IB - parameter 10 3 BSP 50...52 EHP00663 Base-emitter saturation voltage IC = f (VBEsat), I B - parameter 10 3 BSP 50...52 EHP00664 ΙC mA 5 ΙC mA 5 Ι B = 0.5 mA 4 mA 10 2 10 2 Ι B = 0.5 mA 4 mA 5 5 10 1 0 1 V V CE sat 2 10 1 0 1 2 V V BE sat 3 Transition frequency fT = f (IC) VCE = 5V, f = 100MHz 10 3 MHz fT BSP 50...52 EHP00662 10 2 5 10 1 10 1 5 10 2 mA 10 3 ΙC 5 Nov-30-2001