BSP50_07

BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 - BSP52 (PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 4 2 1 3 Type BSP50 BSP51 BSP52 Maximum Ratings Parameter Marking BSP50 BSP51 BSP52 1=B 1=B 1=B 2=C 2=C 2=C Pin Configuration 3=E 3=E 3=E 4=C 4=C 4=C - Package SOT223 SOT223 SOT223 Symbol VCEO Value 45 60 80 Unit V Collector-emitter voltage BSP50 BSP51 BSP52 Collector-base voltage BSP50 BSP51 BSP52 Emitter-base voltage Collector current Peak collector current Base current Total power dissipationTS ≤ 124 °C Junction temperature Storage temperature 1Pb-containing VCBO 60 80 90 VEBO IC ICM IB Ptot Tj Tstg 5 1 2 100 1.5 150 -65 ... 150 mA W °C A package may be available upon special request 1 2007-03-30 BSP50-BSP52 Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 17 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BSP50 IC = 10 mA, IB = 0 , BSP51 IC = 10 mA, IB = 0 , BSP52 V(BR)CEO Symbol min. Values typ. max. Unit V 45 60 80 - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BSP50 IC = 100 µA, IE = 0 , BSP51 IC = 100 µA, IE = 0 , BSP52 V(BR)CBO 60 80 90 V(BR)EBO I CES I EBO h FE - 10 10 µA µA - Emitter-base breakdown voltage IE = 100 µA, IC = 0 5 - Collector-emitter cutoff current VCE = V CE0max, VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) IC = 150 mA, V CE = 10 V IC = 500 mA, V CE = 10 V 1000 2000 VCEsat - V 1.3 1.8 1.9 2.2 Collector-emitter saturation voltage2) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA VBEsat Base emitter saturation voltage 2) IC = 500 mA, IB = 0.5 mA IC = 1 mA, IB = 1 A 1For 2Pulse - calculation of R thJA please refer to Application Note Thermal Resistance test: t < 300µs; D < 2% 2 2007-03-30 BSP50-BSP52 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter AC Characteristics Transition frequency IC = 100 mA, V CE = 5 V, f = 100 MHz Tum-on time IC = 500 mA, IB1 = IB2 = 0.5 mA Tum-off time IC = 500 mA, IB1 = IB2 = 0.5 mA t(off) 1500 t(on) 400 ns fT 200 MHz Symbol min. Values typ. max. Unit 3 2007-03-30 BSP50-BSP52 Switching time test circuit Switching time waveform 4 2007-03-30 BSP50-BSP52 DC current gain hFE = ƒ(IC) VCE = 10 V 10 5 h FE 5 BSP 50...52 EHP00661 Collector-emitter saturation voltage IC = ƒ(VCEsat), IB = Parameter 10 3 BSP 50...52 EHP00663 ΙC mA 5 10 4 5 Ι B = 0.5 mA 4 mA 10 2 10 3 5 5 10 2 10 1 10 2 10 3 mA 10 4 10 1 0 1 V V CE sat 2 ΙC Base-emitter saturation voltage IC = ƒ(V BEsat), IB = Parameter 10 3 BSP 50...52 EHP00664 Transition frequency fT = ƒ(IC) VCE = 5 V, f = 100 MHz 10 3 MHz fT BSP 50...52 EHP00662 ΙC mA 5 Ι B = 0.5 mA 4 mA 10 2 10 2 5 5 10 1 0 1 2 V V BE sat 3 10 1 10 1 5 10 2 mA 10 3 ΙC 5 2007-03-30 BSP50-BSP52 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 28 pF 24 1650 Total power dissipation Ptot = ƒ(TS) mW CEB 1350 1200 CCB(C EB) 22 20 18 16 14 12 10 8 6 4 2 0 0 4 8 12 16 V CCB P tot 22 1050 900 750 600 450 300 150 0 0 15 30 45 60 75 90 105 120 VCB(VEB) °C 150 TS Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 Ptot max 5 Ptot DC BSP 50...52 EHP00943 External resistance R BE = ƒ (TA)** VCB = V CEmax ** RBEmax for thermal stability 10 7 R BE T BSP 50...52 EHP00660 D= tp T tp Ω 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 6 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 10 5 0 50 100 ˚C TA 150 6 2007-03-30 Package SOT223 BSP50-BSP52 Package Outline A 6.5 ±0.2 3 ±0.1 4 1.6±0.1 0.1 MAX. 15˚ MAX. B 3.5 ±0.2 1 2 3 7 ±0.3 0.7 ±0.1 4.6 0.25 M A 2.3 0.5 MIN. 0.28 ±0.04 0...10˚ Foot Print 0.25 M B 3.5 1.4 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 1.4 4.8 8 0.3 MAX. 7.55 12 Pin 1 6.8 1.75 7 2007-03-30 BSP50-BSP52 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 8 2007-03-30