BSP60_07

BSP60-BSP62 PNP Silicon Darlington Transistor • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP50...BSP52 (NPN) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 4 2 1 3 Type BSP60 BSP61 BSP62 Maximum Ratings Parameter Marking BSP60 BSP61 BSP62 1=B 1=B 1=B 2=C 2=C 2=C Pin Configuration 3=E 3=E 3=E 4=C 4=C 4=C - Package SOT223 SOT223 SOT223 Symbol VCEO Value 45 60 80 Unit V Collector-emitter voltage BSP60 BSP61 BSP62 Collector-base voltage BSP60 BSP61 BSP62 Emitter-base voltage Collector current Peak collector current Base current Total power dissipationTS ≤ 124 °C Junction temperature Storage temperature 1Pb-containing VCBO 60 80 90 VEBO IC ICM IB Ptot Tj Tstg 5 1 2 100 1.5 150 -65 ... 150 mA W °C A package may be available upon special request 1 2007-04-26 BSP60-BSP62 Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 17 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BSP60 IC = 10 mA, IB = 0 , BSP61 IC = 10 mA, IB = 0 , BCP62 V(BR)CEO Symbol min. Values typ. max. Unit V 45 60 80 - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BSP60 IC = 100 µA, IE = 0 , BSP61 IC = 100 µA, IE = 0 , BSP62 V(BR)CBO 60 80 90 V(BR)EBO I CES I EBO h FE - 10 10 µA µA - Emitter-base breakdown voltage IE = 100 µA, IC = 0 5 - Collector-emitter cutoff current VCE = V CE0max , VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) IC = 150 mA, V CE = 10 V IC = 500 mA, V CE = 10 V 1000 2000 VCEsat - V 1.3 1.8 1.9 2.2 Collector-emitter saturation voltage2) IC = 500 mA, IB = 0.55 mA IC = 1 A, IB = 1 mA VBEsat Base emitter saturation voltage 2) IC = 500 mA, IB = 0.5 mA IC = 1 A, IB = 1 mA - AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz 1For fT - 200 - MHz calculation of RthJA please refer to Application Note Thermal Resistance test: t < 300µs; D < 2% 2Pulse 2 2007-04-26 BSP60-BSP62 Switching time test circuit Switching time waveform 0V 10% 90% Vin 10% Vout -VCC 10% td tr t on ts t off tf EHN00068 90% 90% 3 2007-04-26 BSP60-BSP62 DC current gain hFE = ƒ(IC) VCE = 10 V 10 5 h FE 5 BSP 60...62 EHP00667 Collector-emitter saturation voltage IC = ƒ(VCEsat), IB = Parameter 10 3 BSP 60...62 EHP00669 ΙC mA 5 10 4 5 10 2 4 mA Ι B = 0.5 mA 10 3 5 5 10 2 10 1 10 2 10 3 mA 10 4 10 1 0 1 V V CE sat 2 ΙC Base-emitter saturation voltage IC = ƒ(V BEsat), IB = Parameter 10 3 BSP 60...62 EHP00670 Transition frequency fT = ƒ(IC) VCE = 10 V, f = 100 MHz 10 3 MHz fT 5 BSP 60...62 EHP00668 ΙC mA 5 Ι B = 0.5 mA 4 mA 10 2 10 2 5 5 10 1 0 1 2 V V BE sat 3 10 1 10 1 5 10 2 mA 10 3 ΙC 4 2007-04-26 BSP60-BSP62 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) 22 pF CEB Total power dissipation Ptot = ƒ(TS) 1650 mW 1350 1200 CCB(C EB) 18 16 P tot CCB 1050 900 14 12 750 10 600 8 6 4 2 0 450 300 150 4 8 12 16 V 22 0 0 15 30 45 60 75 90 105 120 VCB(VEB) °C 150 TS Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 Ptot max Ptot DC BSP 60...62 EHP00273 External resistance R BE = ƒ (TA)** VCB = V CEmax ** RBEmax for thermal stability 10 7 R BE T BSP 60...62 EHP00666 D= tp T tp Ω 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 6 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 5 0 50 100 ˚C TA 150 5 2007-04-26 Package SOT223 BSP60-BSP62 Package Outline A 6.5 ±0.2 3 ±0.1 4 1.6±0.1 0.1 MAX. 15˚ MAX. B 3.5 ±0.2 1 2 3 7 ±0.3 0.7 ±0.1 4.6 0.25 M A 2.3 0.5 MIN. 0.28 ±0.04 0...10˚ Foot Print 0.25 M B 3.5 1.4 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 1.4 4.8 8 0.3 MAX. 7.55 12 Pin 1 6.8 1.75 6 2007-04-26 BSP60-BSP62 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2007-04-26