BSP762

BSP 762 T Smart Power High-Side-Switch Features • Overload protection • Current limitation • Short circuit protection • Thermal shutdown with restart • Fast demagnetization of inductive loads • Reverse battery protection with external resistor • CMOS compatible input • Loss of GND and loss of Vbb protection • ESD - Protection • Very low standby current Product Summary Overvoltage protection Operating voltage On-state resistance Nominal load current Vbb(AZ) Vbb(on) RON IL(nom) 41 100 2 V mΩ A 5...34 V • Overvoltage protection (including load dump) Application • All types of resistive, inductive and capacitive loads • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Page 1 2004-01-27 BSP 762 T Block Diagram + V bb Voltage source V Logic Overvoltage protection Current limit Gate protection Charge pump Level shifter Rectifier IN Limit for unclamped ind. loads OUT Temperature sensor Load ESD Logic GND miniPROFET  Signal GND Load GND Pin 1 2 3 4 5 6 7 8 Symbol GND IN OUT NC Vbb Vbb Vbb Vbb Function Logic ground Input, activates the power switch in case of logic high signal Output to the load not connected Positive power supply voltage Positive power supply voltage Positive power supply voltage Positive power supply voltage Pin configuration Top view GND IN OUT NC 1• 2 3 4 8 7 6 5 Vbb Vbb Vbb Vbb Page 2 2004-01-27 BSP 762 T Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Supply voltage Supply voltage for full short circuit protection Tj = -40...+150°C Continuous input voltage Load current (Short - circuit current, see page 5) Current through input pin (DC) Operating temperature Storage temperature Power dissipation 1) Inductive load switch-off energy dissipation 1)2) single pulse, (see page 8) Tj =150 °C, Vbb = 13.5 V, IL = 1 A Load dump protection 2) VLoadDump3)= VA + VS RI=2Ω, td=400ms, VIN= low or high, VA=13,5V RL = 13.5 Ω Electrostatic discharge voltage (Human Body Model) VESD according to ANSI EOS/ESD - S5.1 - 1993 ESD STM5.1 - 1998 Input pin all other pins Thermal Characteristics Thermal resistance @ min. footprint Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) Rth(JA) 95 70 83 K/W ±1 ±5 60 kV VLoaddump V VIN IL I IN Tj T stg Ptot EAS -10 ... +16 self limited ±5 -40 ...+150 -55 ... +150 1.5 870 W mJ A mA °C Symbol Vbb Vbb(SC) Value 40 Vbb Unit V 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 16) 2not subject to production test, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 . Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a 150Ω resistor in GND connection. A resistor for the protection of the input is integrated. Page 3 2004-01-27 BSP 762 T Electrical Characteristics Parameter and Conditions at Tj = -40...+150°C, V bb = 13,5V, unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance T j = 25 °C, I L = 2 A, V bb = 9...40 V T j = 150 °C Nominal load current; Device on PCB 1) T C = 85 °C, T j ≤ 150 °C Turn-on time RL = 47 Ω Turn-off time RL = 47 Ω Slew rate on RL = 47 Ω Slew rate off RL = 47 Ω Operating Parameters Operating voltage Undervoltage shutdown of charge pump Tj = -40...+85 °C Tj = 150 °C Undervoltage restart of charge pump Standby current Tj = -40...+85 °C, VIN = 0 V Tj = 150°C2) , VIN = 0 V Leakage output current (included in Ibb(off)) VIN = 0 V Operating current VIN = 5 V 1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. (see page 16) 2higher current due temperature sensor Symbol min. RON IL(nom) ton toff dV/dton -dV/dtoff 2 - Values typ. max. Unit mΩ 70 140 2.4 90 90 0.8 0.8 100 200 170 230 1.7 1.7 V/µs A µs to 90% V OUT to 10% V OUT 10 to 30% V OUT, 70 to 40% V OUT, Vbb(on) Vbb(under) 5 - 4 0.5 34 4 5.5 5.5 V Vbb(u cp) Ibb(off) - µA 10 15 5 1.3 mA IL(off) IGND - Page 4 2004-01-27 BSP 762 T Electrical Characteristics Parameter and Conditions at Tj = -40...+150°C, Vbb = 13,5V, unless otherwise specified Protection Functions1) Initial peak short circuit current limit (pin 5 to 3) Tj = -40 °C, Vbb = 20 V, tm = 150 µs Tj = 25 °C Tj = 150 °C Repetitive short circuit current limit Tj = Tjt (see timing diagrams) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), Ibb = 4 mA Overvoltage protection 2) Ibb = 4 mA Thermal overload trip temperature Thermal hysteresis Reverse Battery Reverse battery 3) Drain-source diode voltage (VOUT > Vbb) Tj = 150 °C -Vbb -VON 600 32 V mV T jt ∆Tjt 150 10 °C K Vbb(AZ) 41 I L(SCr) VON(CL) 41 7 47 V I L(SCp) 4 10 18 A Symbol min. Values typ. max. Unit 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation . 2 see also VON(CL) in circuit diagram on page 7 3Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation! Input current has to be limited (see max. ratings page 3). Page 5 2004-01-27 BSP 762 T Electrical Characteristics Parameter and Conditions at Tj = -40...+150°C, Vbb = 13,5V, unless otherwise specified Input Input turn-on threshold voltage (see page 12) Input turn-off threshold voltage (see page 12) Input threshold hysteresis Off state input current (see page 12) VIN = 0.7 V On state input current (see page 12) VIN = 5 V Input resistance (see page 7) RI 1.5 3.5 5 kΩ I IN(on) 3 25 ∆V IN(T) I IN(off) 1 0.3 25 µA VIN(T-) 0.8 VIN(T+) 2.2 V Symbol min. Values typ. max. Unit Page 6 2004-01-27 BSP 762 T Terms Ibb V Z V ON Inductive and overvoltage output clamp + V bb Vbb I IN IN V V bb PROFET OUT OUT GND IL VON IN R GND IGND GND VOUT VON clamped to 47V typ. Input circuit (ESD protection) R IN I Overvoltage protection of logic part + V bb V Z2 ESD- ZD I GND I I IN RI L o gic V Z1 The use of ESD zener diodes as voltage clamp at DC conditions is not recommended GND R GN D S ignal GND Reverse battery protection - V bb VZ1 =6.1V typ., VZ2 =Vbb(AZ) =47V typ., RI=3.5 kΩ typ., RGND=150Ω Logic IN RI OUT Power Inverse Diode GND R GND Signal GND Power GND RL RGND=150Ω, RI=3.5kΩ typ., Temperature protection is not active during inverse current Page 7 2004-01-27 BSP 762 T GND disconnect Vbb disconnect with charged inductive load Vbb IN PROFET OUT Vbb high IN PROFET OUT GND V bb V IN V GND GND V bb GND disconnect with GND pull up Vbb IN PROFET OUT Inductive Load switch-off energy dissipation E bb E AS Vbb E Load GND V bb V IN V GND = IN PROFET OUT GND ZL { R L L EL ER Energy stored in load inductance: EL = ½ * L * IL2 While demagnetizing load inductance, the enérgy dissipated in PROFET is EAS = Ebb + EL - ER = VON(CL) * iL(t) dt, with an approximate solution for RL > 0Ω: E AS = IL * R L IL * L ) * ( V b b + | V O U T ( C L )| ) * ln (1 + | V O U T ( C L )| 2 * RL Page 8 2004-01-27 BSP 762 T Typ. transient thermal impedance ZthJA=f(tp) @ 6cm 2 heatsink area Parameter: D=tp/T 10 2 Typ. transient thermal impedance Z thJA=f(tp) @ min. footprint Parameter: D=tp/T 10 2 K/W D=0.5 D=0.2 K/W D=0.5 D=0.2 10 1 D=0.1 10 1 D=0.1 D=0.05 D=0.02 D=0.02 Z thJA ZthJA D=0.05 10 0 D=0.01 10 0 D=0.01 10 -1 D=0 10 -1 D=0 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 s 10 4 10 -2 -7 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 10 tp s 10 4 tp Typ. on-state resistance RON = f(Tj) ; Vbb = 13,5V ; Vin = high 160 Typ. on-state resistance RON = f(V bb); IL = 0.5A ; V in = high 200 mΩ 120 mΩ 150°C 150 RON 100 RON 125 80 100 25°C -40°C 60 75 40 50 20 25 0 -40 -20 0 20 40 60 80 100 120 °C 160 0 0 5 10 15 20 25 30 Tj Page 9 V Vbb 40 2004-01-27 BSP 762 T Typ. turn on time ton = f(Tj ); RL = 47Ω 160 Typ. turn off time toff = f(Tj); RL = 47Ω 160 32V 9V µs 9V µs 120 13.5V 120 t on toff 32V 100 100 80 80 60 60 40 40 20 20 0 -40 -20 0 20 40 60 80 100 120 °C 160 0 -40 -20 0 20 40 60 80 100 120 °C 160 Tj Tj Typ. slew rate on dV/dton = f(T j) ; RL = 47 Ω 2 Typ. slew rate off dV/dtoff = f(Tj); R L = 47 Ω 2 V/µs 1.6 V/µs 1.6 dV dton 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 -20 13.5V 9V 32V -dV dtoff 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 -20 13.5V 9V 32V 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 Tj Page 10 Tj 2004-01-27 BSP 762 T Typ. standby current Ibb(off) = f(Tj ) ; Vbb = 32V ; VIN = low 7 Typ. leakage current I L(off) = f(Tj) ; Vbb = 32V ; VIN = low 2 µA µA 1.6 I bb(off) I L(off) °C 160 5 1.4 1.2 1 4 3 0.8 0.6 0.4 2 1 0.2 0 -40 -20 0 -40 -20 0 20 40 60 80 100 120 0 20 40 60 80 100 120 °C 160 Tj Tj Typ. initial peak short circuit current limit IL(SCp) = f(Tj) ; Vbb = 20V 14 Typ. initial short circuit shutdown time toff(SC) = f(Tj,start) ; Vbb = 20V 3.5 A ms IL(SCp) 10 toff(SC) 2.5 8 2 6 1.5 4 1 2 0.5 0 -40 -20 0 20 40 60 80 100 120 °C 160 0 -40 -20 0 20 40 60 80 100 120 °C 160 Tj Page 11 Tj 2004-01-27 BSP 762 T Typ. input current IIN(on/off) = f(Tj); Vbb = 13,5V; VIN = low/high VINlow ≤ 0,7V; VINhigh = 5V 14 200 Typ. input current I IN = f(VIN); V bb = 13.5V µA µA 160 150°C 10 140 IIN IIN on 8 120 100 -40...25°C 6 off 80 60 40 4 2 20 0 -40 -20 0 0 0 20 40 60 80 100 120 °C 160 2 4 V VIN 8 Tj Typ. input threshold voltage VIN(th) = f(Tj ) ; Vbb = 13,5V 2 Typ. input threshold voltage VIN(th) = f(V bb) ; Tj = 25°C 2 V 1.6 on V on 1.6 V IN(th) VIN(th) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -40 -20 off 1.4 1.2 1 0.8 0.6 0.4 0.2 off 0 20 40 60 80 100 120 °C 160 0 5 10 15 20 25 V Vbb 35 Tj Page 12 2004-01-27 BSP 762 T Maximum allowable load inductance for a single switch off L = f(IL); Tjstart =150°C, Vbb=13.5V, RL=0Ω 3000 Maximum allowable inductive switch-off energy, single pulse EAS = f(I L); T jstart = 150°C, Vbb = 13,5V 2500 mH mJ EAS 0.5 1 1.5 2000 1500 L 1500 1000 1000 500 500 0 0 A IL 2.5 0 0 0.5 1 1.5 A IL 2.5 Page 13 2004-01-27 BSP 762 T Timing diagrams Figure 1a: Vbb turn on: Figure 2b: Switching a lamp, IN IN V bb OUT V I OUT L t t Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition IN Figure 2c: Switching an inductive load IN V OUT 90% t on d V /d to n 10% t d V /d to f f V OUT o ff IL I L t t Page 14 2004-01-27 BSP 762 T Figure 3a: Turn on into short circuit, shut down by overtemperature, restart by cooling IN Figure 5: Undervoltage restart of charge pump Vo n t I L I L(SCp) V b b( u c p ) I L(SCr) V b ( u n d er ) b tm t off(SC) t Vbb Heating up of the chip may require several milliseconds, depending on external conditions. Figure 4: Overtemperature: Reset if Tj < Tjt IN V OUT T J t Page 15 2004-01-27 BSP 762 T Package and ordering code all dimensions in mm Package: P-DSO-8-6 Ordering code: Q67060-S7301-A2 Printed circuit board (FR4, 1.5mm thick, one layer 70µm, 6cm2 active heatsink area ) as a reference for max. power dissipation Ptot Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. nominal load current IL(nom) and thermal resistance R thja Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 16 2004-01-27