BSP78

HITFETÒ II.Generation BSP 78 Smart Lowside Power Switch Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown with auto restart · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible 1 3 2 VPS05163 Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) ID(Nom) EAS 4 42 50 3 500 V mW A mJ Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V DC applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded protection functions. Vbb M HITFET â Current Limitation In Pin 1 Drain OvervoltageProtection Pin 2 and 4 (TAB) Gate-Driving Unit ESD Overload Protection Overtemperature Protection Short circuit Protection Pin 3 Source Complete product spectrum and additional information http://www.infineon.com/hitfet Page 1 2004-03-05 BSP 78 Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Drain source voltage Supply voltage for full short circuit protection Continuous input voltage1) Continuous input current2) -0.2V £ VIN £ 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation 5) TC = 85 °C Unclamped single pulse inductive energy 2) Load dump protection VLoadDump2)3) = VA + VS VIN = 0 and 10 V, td = 400 ms, RI = 2 W, RL = 4.5 W, VA = 13.5 V Electrostatic discharge voltage2) (Human Body Model) VESD according to Jedec norm EIA/JESD22-A114-B, Section 4 Jedec humidity category,J-STD-20-B IEC climatic category; DIN EN 60068-1 Thermal resistance junction - ambient: @ min. footprint @ 6 cm 2 cooling area 4) junction-soldering point: 1For input voltages beyond these limits I has to be limited. IN 2not subject to production test, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 5not subject to production test, calculated by R thJA and Rds(on) Page 2 Symbol VDS Vbb(SC) VIN IIN Value 42 42 -0.22) ... +10 Unit V mA self limited | IIN | £ 2 Tj Tstg Ptot EAS VLD -40 ...+150 -55 ... +150 3.8 500 53.5 °C W mJ V 2 kV MSL1 40/150/56 RthJA 125 72 RthJS 17 K/W K/W 2004-03-05 BSP 78 Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40...+85 °C, V DS = 32 V , VIN = 0 V Tj = 150 °C Input threshold voltage ID = 1.4 mA, T j = 25 °C ID = 1.4 mA, T j = 150 °C On state input current On-state resistance VIN = 5 V, ID = 3 A, Tj = 25 °C VIN = 5 V, ID = 3 A, Tj = 150 °C On-state resistance VIN = 10 V, I D = 3 A, Tj = 25 °C VIN = 10 V, I D = 3 A, Tj = 150 °C Nominal load current 5) VDS = 0.5 V, Tj < 150°C, VIN = 10 V, T A = 85 °C Current limit (active if VDS>2.5 V)1) VIN = 10 V, VDS = 12 V, t m = 200 µs ID(lim) 18 24 30 ID(Nom) RDS(on) 3 35 65 4 50 90 A IIN(on) RDS(on) 45 75 60 100 VIN(th) 1.3 0.8 1.7 10 2.2 30 µA mW IDSS 1.5 5 8 15 V µA VDS(AZ) 42 55 V Symbol min. Values typ. max. Unit 1Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 µs. 5not subject to production test, calculated by R thJA and Rds(on) Page 3 2004-03-05 BSP 78 Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Dynamic Characteristics Turn-on time VIN to 90% ID : ton toff -dVDS/dt on dVDS/dtoff 60 60 0.3 0.7 100 100 1.5 1.5 V/µs µs RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Thermal hysteresis 2) Input current protection mode Tj = 150 °C Unclamped single pulse inductive energy 2) ID = 3 A, Tj = 25 °C, Vbb = 12 V EAS 500 mJ Tjt DTjt IIN(Prot) 150 175 10 130 300 °C K µA Symbol min. Values typ. max. Unit Inverse Diode Inverse diode forward voltage IF = 15 A, tm = 250 µs, V IN = 0 V, tP = 300 µs VSD 1 1.5 V 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design Page 4 2004-03-05 BSP 78 Block diagram Terms Inductive and overvoltage output clamp RL V I IN 1 IN HITFET S 3 D 2 ID VDS Vbb Z D S HITFET VIN Input circuit (ESD protection) Short circuit behaviour Gate Drive Input V IN Source/ Ground IIN ID S T j Page 5 2004-03-05 BSP 78 1 Maximum allowable power dissipation Ptot = f(TS) resp. Ptot = f(TA) @ R thJA=72 K/W 10 W 2 On-state resistance RON = f(Tj ); ID=3A; VIN=10V 100 mW 8 7 max. 80 RDS(on) max. 70 60 50 40 30 20 10 Ptot typ. 6 5 4 3 2 6cm2 1 0 -75 100 °C -50 -25 0 25 50 75 150 0 -50 -25 0 25 50 75 100 125 °C 175 TS ;TA Tj 3 On-state resistance RON = f(T j); ID= 3A; VIN=5V 110 4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 0.7 mA; V DS = 12V 2 max. V mW 90 1.6 RDS(on) VGS(th) 80 70 60 typ. 1.4 1.2 1 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 °C 175 0.8 0.6 0.4 0.2 0 -50 °C -25 0 25 50 75 100 150 Tj Page 6 Tj 2004-03-05 BSP 78 5 Typ. transfer characteristics I D=f(V IN); VDS=12V; T Jstart=25°C 30 6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: VIN 30 A A 20 20 ID ID Vin=10V 15 15 5V 10 10 5 5 0 0 1 2 3 4 5 6 7 8 V 10 0 -50 -25 0 25 50 75 100 125 °C 175 VIN Tj 7 Typ. output characteristics I D=f(V DS); T Jstart=25°C Parameter: VIN 35 A 10V 7V 8 Off-state drain current IDSS = f(Tj) 16 max. µA 25 12 IDSS 6V ID 10 20 4V 5V 8 15 6 10 typ. Vin=3V 4 5 2 0 0 1 2 3 4 V 6 0 -40 -15 10 35 60 85 110 135 °C 185 VDS Page 7 Tj 2004-03-05 BSP 78 9 Typ. overload current ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart 40 A 10 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 2 K/W D=0.5 0.2 0.1 0.05 10 1 30 -40°C ID(lim) ZthJA 25 10 0 0.02 0.01 20 10 -1 15 150°C 85°C 25°C 10 10 -2 Single pulse 5 0 0 0.5 1 1.5 2 2.5 3 ms 4 10 -3 -7 -6 -5 -4 -3 -2 -1 0 1 10 10 10 10 10 10 10 10 10 s 10 3 t tp 11 Determination of ID(lim) ID(lim) = f(t); t m = 200µs Parameter: TJstart 40 A 30 -40°C ID(lim) 25 25°C 20 85°C 15 150°C 10 5 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Page 8 2004-03-05 BSP 78 Package SOT-223 A Ordering Code Q67060-S7203-A3 6.5 ±0.2 3 ±0.1 0.1 max 1.6 ±0.1 B 7 ±0.3 15˚ max 4 1 2 3 2.3 4.6 0.5 min 0.7 ±0.1 0.28 ±0.04 0.25 M A 0.25 M B GPS05560 3.5 ±0.2 +0.2 acc. to DIN 6784 Page 9 2004-03-05 BSP 78 Revision History : Previous version : Page 2, 4 2, 3 2 2 2 3 2004-03-05 2003-04-22 Subjects (major changes since last revision) Footnote 2 extended to Vin