BSS123

Rev. 1.0 BSS123 SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS 100 6 0.17 SOT23 V Ω A RDS(on) ID 3 Drain pin 3 Gate pin1 Source pin 2 2 1 VPS05161 Type BSS123 BSS123 Package SOT23 SOT23 Ordering Code Q62702-S512 Q67000-S245 Tape and Reel Information E6327: 3000 pcs/reel E6433: 10000 pcs/reel Marking SAs SAs Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 0.17 0.14 Unit A Pulsed drain current TA=25°C I D puls dv/dt VGS Ptot 0.68 6 ±20 Class 1 0.36 -55... +150 55/150/56 W °C kV/µs V Reverse diode d v/dt IS=0.17A, VDS=80V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j , Tstg Page 1 2002-12-10 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimum footprint Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID =250µA BSS123 Symbol min. RthJA - Values typ. max. 350 Unit K/W Symbol min. V(BR)DSS Values typ. 1.4 max. 1.8 Unit 100 0.8 V Gate threshold voltage, VGS = VDS ID=50µA VGS(th) I DSS Zero gate voltage drain current VDS=100V, VGS=0, Tj=25°C VDS=100V, VGS=0, Tj=150°C µA 4 3 0.01 5 10 10 6 nA Ω Gate-source leakage current VGS=20V, VDS=0 I GSS RDS(on) RDS(on) - Drain-source on-state resistance VGS=4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2002-12-10 Rev. 1.0 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD=50V, VGS=10V, ID=0.17A, RG=6Ω VDS≥2*ID*RDS(on)max, ID=0.14A VGS=0, VDS=25V, f=1MHz BSS123 Symbol Conditions min. 0.09 - Values typ. 0.19 55 8.5 5 2.7 3.1 9.9 25 max. 69 10.6 6.3 4 4.6 14.8 37 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Q gs Q gd VDD =80V, ID =0.17A - 0.055 0.77 1.78 2.6 0.082 nC 1.15 2.67 V Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Qg VDD =80V, ID =0.17A, VGS =0 to 10V V(plateau) VDD =80V, ID = 0.17 A IS TA=25°C - 0.81 27.6 10.5 0.17 0.68 1.2 41.1 15.7 A Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0, IF = IS VR=50V, I F=lS , diF/dt=100A/µs - V ns nC Page 3 2002-12-10 Rev. 1.0 1 Power dissipation Ptot = f (TA) 0.38 BSS123 BSS123 2 Drain current ID = f (TA) parameter: VGS ≥ 10 V BSS123 0.18 W A 0.32 0.14 0.28 P tot ID 0.1 0.08 0.06 0.04 0.02 0 0 20 40 60 80 100 120 0.24 0.2 0.16 0.12 0.08 0.04 0 0 0.12 °C 160 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 1 BSS123 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 BSS123 K/W A 10 2 10 0 /ID = V DS n (o ) tp = 120.0 µs Z thJA 10 1 ID RD S 1 ms 10 -1 10 ms 10 0 D = 0.50 0.20 10 -1 0.10 0.05 0.02 10 -2 10 -2 DC 10 -3 0 10 10 -3 -7 10 single pulse 0.01 10 1 10 2 V 10 3 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2002-12-10 Rev. 1.0 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS 0.7 BSS123 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS 20 A 0.6 0.55 0.5 ID 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 10V 5V 4.5V 4.1V 3.9V 3.7V 3.5V 3.1V 2.9V 2.3V Ω 16 14 12 10 8 6 4 2 0 0 2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V 0.5 1 1.5 2 2.5 3 3.5 4 V R DS(on) 5 0.1 0.2 0.3 0.4 0.5 A 0.7 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: Tj = 25 °C 0.7 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C 0.4 A S 0.3 0.5 gfs 0.4 0.3 0.2 0.1 0 0 ID 0.25 0.2 0.15 0.1 0.05 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 0.1 0.2 0.3 0.4 0.5 A 0.7 VGS Page 5 ID 2002-12-10 Rev. 1.0 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.17 A, VGS = 10 V 24 BSS123 BSS123 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =50µA 2.2 Ω 20 V 98% 1.8 R DS(on) V GS(th) 18 16 14 1.6 1.4 1.2 typ. 12 1 10 8 6 4 typ 2 0 -60 -20 20 60 100 °C 2% 0.8 98% 0.6 0.4 0.2 180 0 -60 -20 20 60 100 Tj °C Tj 160 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 °C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 0 BSS123 pF A 10 2 C Coss 10 1 IF 10 -2 Tj = 25 °C typ Ciss 10 -1 Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2002-12-10 Rev. 1.0 13 Typ. gate charge VGS = f (QG ); parameter: VDS , BSS123 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) BSS123 ID = 0.17 A pulsed, Tj = 25 °C 16 V BSS123 120 V 12 V (BR)DSS 0.5 VDS max 0.8 VDS max nC 114 112 110 108 106 104 V GS 10 8 0.2 VDS max 6 102 100 98 96 4 2 94 92 0 0 0.4 0.8 1.2 1.6 2 2.8 90 -60 -20 20 60 100 °C 180 QG Tj Page 7 2002-12-10 Rev. 1.0 Published by Infineon Technologies AG , Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-12-10