BSS123_10

Rev. 1.41 BSS123 SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS 100 6 0.17 PG-SOT23 V Ω A RDS(on) ID 3 Drain pin 3 • Qualified according to AEC Q101 Gate pin1 Source pin 2 2 1 VPS05161 Type BSS123 BSS123 Package PG-SOT23 PG-SOT23 Pb-free Yes Yes Tape and Reel Information L6327: 3000 pcs/reel L6433: 10000 pcs/reel Marking SAs SAs Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 0.17 0.14 Unit A Pulsed drain current TA=25°C I D puls dv/dt VGS Ptot 0.68 6 ±20 Class 1a 0.36 -55... +150 55/150/56 W °C kV/µs V Reverse diode d v/dt IS=0.17A, VDS=80V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j , Tstg Page 1 2010-05-12 Rev. 1.41 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimum footprint Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID =250µA BSS123 Symbol min. RthJA - Values typ. max. 350 Unit K/W Symbol min. V(BR)DSS Values typ. 1.4 max. 1.8 Unit 100 0.8 V Gate threshold voltage, VGS = VDS ID=50µA VGS(th) I DSS Zero gate voltage drain current VDS=100V, VGS=0, Tj=25°C VDS=100V, VGS=0, Tj=150°C µA 4 3 0.01 5 10 10 6 nA Ω Gate-source leakage current VGS=20V, VDS=0 I GSS RDS(on) RDS(on) - Drain-source on-state resistance VGS=4.5V, ID=0.13A Drain-source on-state resistance VGS=10V, ID=0.17A Page 2 2010-05-12 Rev. 1.41 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD=50V, VGS=10V, ID=0.17A, RG=6Ω VDS≥2*ID*RDS(on)max, ID=0.14A VGS=0, VDS=25V, f=1MHz BSS123 Symbol Conditions min. 0.09 - Values typ. 0.19 55 8.5 5 2.7 3.1 9.9 25 max. 69 10.6 6.3 4 4.6 14.8 37 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Q gs Q gd VDD =80V, ID =0.17A - 0.055 0.77 1.78 2.6 0.082 nC 1.15 2.67 V Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Qg VDD =80V, ID =0.17A, VGS =0 to 10V V(plateau) VDD =80V, ID = 0.17 A IS TA=25°C - 0.81 27.6 10.5 0.17 0.68 1.2 41.1 15.7 A Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0, IF = IS VR=50V, I F=lS , diF/dt=100A/µs - V ns nC Page 3 2010-05-12 Rev. 1.41 1 Power dissipation Ptot = f (TA) 0.38 BSS123 BSS123 2 Drain current ID = f (TA) parameter: VGS ≥ 10 V BSS123 0.18 W A 0.32 0.14 0.28 P tot ID 0.1 0.08 0.06 0.04 0.02 0 0 20 40 60 80 100 120 0.24 0.2 0.16 0.12 0.08 0.04 0 0 0.12 °C 160 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 1 BSS123 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 BSS123 K/W A 10 2 10 0 /ID = V DS n (o ) tp = 120.0 µs Z thJA 10 1 ID RD S 1 ms 10 -1 10 ms 10 0 D = 0.50 0.20 10 -1 0.10 0.05 0.02 10 -2 10 -2 DC 10 -3 0 10 10 -3 -7 10 single pulse 0.01 10 1 10 2 V 10 3 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2010-05-12 Rev. 1.41 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS 0.7 BSS123 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS 20 A 0.6 0.55 0.5 ID 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 10V 5V 4.5V 4.1V 3.9V 3.7V 3.5V 3.1V 2.9V 2.3V Ω 16 14 12 10 8 6 4 2 0 0 2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V 0.5 1 1.5 2 2.5 3 3.5 4 V R DS(on) 5 0.1 0.2 0.3 0.4 0.5 A 0.7 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: Tj = 25 °C 0.7 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C 0.4 A S 0.3 0.5 gfs 0.4 0.3 0.2 0.1 0 0 ID 0.25 0.2 0.15 0.1 0.05 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 0.1 0.2 0.3 0.4 0.5 A 0.7 VGS Page 5 ID 2010-05-12 Rev. 1.41 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.17 A, VGS = 10 V 24 BSS123 BSS123 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =50µA 2.2 Ω 20 V 98% 1.8 R DS(on) V GS(th) 18 16 14 1.6 1.4 1.2 typ. 12 1 10 8 6 4 typ 2 0 -60 -20 20 60 100 °C 2% 0.8 98% 0.6 0.4 0.2 180 0 -60 -20 20 60 100 Tj °C Tj 160 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 °C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 0 BSS123 pF A 10 2 C Coss 10 1 IF 10 -2 Tj = 25 °C typ Ciss 10 -1 Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2010-05-12 Rev. 1.41 13 Typ. gate charge VGS = f (QG ); parameter: VDS , BSS123 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) BSS123 ID = 0.17 A pulsed, Tj = 25 °C 16 V BSS123 120 V 12 V (BR)DSS 0.5 VDS max 0.8 VDS max nC 114 112 110 108 106 104 V GS 10 8 0.2 VDS max 6 102 100 98 96 4 2 94 92 0 0 0.4 0.8 1.2 1.6 2 2.8 90 -60 -20 20 60 100 °C 180 QG Tj Page 7 2010-05-12 BSS123 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. 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