BSS127

Type BSS127 SIPMOS® Small-Signal-Transistor Features • n-channel • enhancement mode • Logic level (4.5V rated) • dv /dt rated • Qualified according to AEC Q101 • 100%lead-free; RoHS compliant Product Summary V DS R DS(on),max ID 600 500 0.021 V Ω A PG-SOT-23 Type BSS127 Package PG-SOT-23 Pb-free Yes Tape and Reel Information L6327: 3000PCS/reel Marking Sis Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Value 0.021 0.017 0.09 Unit A Reverse diode d v /dt dv /dt 6 kV/µs Gate source voltage ESD class (JESD22-A114-HBM) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS ±20 0 (2|I D|R DS(on)max, I D=0.01 A 600 1.4 2.0 2.6 0.1 µA V - 10 330 10 100 600 nA Ω - 310 500 Transconductance g fs 0.007 0.015 - S Rev. 1.47 page 2 2010-07-29 BSS127 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=0 V, I F=0.016 A, T j=25 °C V R=300 V, I F=0.016 A, di F/dt =100 A/µs 0.82 160 13.2 0.016 0.09 1.2 240 19.8 V ns nC A Q gs Q gd Qg V plateau V DD=300 V, I D=0.01 A, V GS=0 to 10 V 0.07 0.31 0.65 3.56 0.10 0.5 1.0 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=300 V, V GS=10 V, I D=0.01 A, R G=6 Ω V GS=0 V, V DS=25 V, f =1 MHz 21 2.4 1.0 6.1 9.7 14 115 28 3 1.5 19.0 14.5 21 170 ns pF Values typ. max. Unit Rev. 1.47 page 3 2010-07-29 BSS127 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V 0.6 0.03 0.5 0.025 0.4 0.02 P tot [W] 0.3 I D [A] 0.015 0.2 0.01 0.1 0.005 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p 10-1 10 µs 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 limited by on-state resistance 100 µs 1 ms 10 ms 100 ms 0.5 102 0.2 0.1 10 -2 Z thJA [K/W] 0.05 0.02 0.01 single pulse I D [A] 101 DC 10-3 100 10-1 10-4 100 101 10-5 10-4 10-3 10-2 10-1 100 101 102 103 V DS [V] 102 103 t p [s] Rev. 1.47 page 4 2010-07-29 BSS127 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 0.03 10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 1000 2.6 V 3V 5V 3.2 V 3.6 V 4V 3.8 V 0.025 800 4V 0.02 0.015 3.6 V R DS(on) [Ω ] 3.8 V 600 I D [A] 400 5V 10 V 0.01 3.2 V 0.005 200 3V 2.6 V 0 0 2 4 6 8 10 0 0 0.005 0.01 0.015 0.02 0.025 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 0.025 0.025 0.02 0.02 0.015 0.015 0.01 g fs [S] 0.01 0.005 0 0 1 2 3 4 0 0.000 0.005 0.010 0.015 0.020 I D [A] 0.005 V GS [V] I D [A] Rev. 1.47 page 5 2010-07-29 BSS127 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.016 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=8 µA parameter: I D 1000 900 3 800 700 2.5 max 3.5 R DS(on) [Ω ] 500 400 typ V GS(th) [V] 600 98 % 2 typ 1.5 min 300 200 1 0.5 100 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 10-1 150 °C, 98% 25 °C, 98% Ciss 150 °C 25 °C 10 1 C [pF] Coss I F [A] 10-2 Crss 100 10-1 0 5 10 15 20 25 10-3 0 0.4 0.8 1.2 1.6 2 2.4 2.8 V DS [V] V SD [V] Rev. 1.47 page 6 2010-07-29 BSS127 13 Typ. gate charge V GS=f(Q gate); I D=0.01 A pulsed parameter: V DD 10 9 8 7 700 680 660 640 14 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA V BR(DSS) [V] 6 120 V 300 V 480 V 620 600 580 560 540 520 500 V GS [V] 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -60 -20 20 60 100 140 180 Q gate [nC] T j [°C] 15 Gate charge waveforms V GS Qg V g s(th) Q g(th) Q gs Q sw Q gd Q g ate Rev. 1.47 page 7 2010-07-29 BSS127 SOT-23 Package Outline: Footprint: Packaging: Rev. 1.47 page 8 2010-07-29 BSS127 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.47 page 9 2010-07-29