BSS131

Type BSS131 SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic level • dv /dt rated Product Summary V DS R DS(on),max ID 240 14 0.1 V Ω A SOT-23 Type BSS131 BSS131 Package SOT23 SOT23 Ordering Code Q62702-S565 Q67000-S229 Tape and Reel Information E6327 E6433 Marking SRs SRs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.1 A, V DS=192 V, di /dt =200 A/µs, T j,max=150 °C Value 0.11 0.09 0.4 Unit A Reverse diode dv /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS ±20 Class 1 V P tot T j, T stg T A=25 °C 0.36 -55 ... 150 55/150/56 W °C Rev. 2.0 page 1 2004-04-29 BSS131 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA 350 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I D (off) V DS=0 V, I D=56 µA V DS=240 V, V GS=0 V, T j=25 °C V DS=240 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=0.09 A V GS=10 V, I D=0.1 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.08 A 240 0.8 1.4 1.8 0.01 µA V 0.06 9.07 7.7 0.13 5 10 20 14 S nA Ω Rev. 2.0 page 2 2004-04-29 BSS131 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=0 V, I F=0.1 A, T j=25 °C V R=120 V, I F=0.1 A, di F/dt =100 A/µs 0.81 42.9 22.6 0.11 0.43 1.2 64.3 34 V ns nC A Q gs Q gd Qg V plateau V DD=192 V, I D=0.1 A, V GS=0 to 10 V 0.16 0.8 2.1 2.90 0.22 1.2 3.1 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=120 V, V GS=10 V, I D=0.1 A, R G=6 Ω V GS=0 V, V DS=25 V, f =1 MHz 58 7.3 2.8 3.3 3.1 13.7 64.5 77 10 4.2 5.0 4.6 20 97 ns pF Values typ. max. Unit Rev. 2.0 page 3 2004-04-29 BSS131 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V 0.4 0.12 0.1 0.3 0.08 P tot [W] 0.2 I D [A] 0.06 0.04 0.1 0.02 0 0 40 80 120 160 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p 100 limited by on-state resistance 30 µs 100 µs 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 0.5 10-1 1 ms 102 0.2 10 ms Z thJA [K/W] 1000 I D [A] 0.1 100 ms 0.05 10-2 101 0.02 DC 0.01 10-3 1 10 100 100 single pulse 10-5 10-4 10-3 10-2 10-1 100 101 V DS [V] t p [s] Rev. 2.0 page 4 2004-04-29 BSS131 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 0.4 10 V 5V 3.9 V 7V 4.5 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 25 23 21 2.3 V 2.7 V 3.3 V 3.9 V 0.3 19 R DS(on) [Ω ] 17 15 13 11 4.5 V 5V I D [A] 0.2 3.3 V 0.1 2.7 V 9 2.3 V 7V 10 V 7 5 0 0 1 2 3 4 5 6 7 0 0.1 0.2 0.3 0.4 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 0.3 0.4 0.25 0.3 0.2 g fs [S] 0 1 2 3 4 I D [A] 0.15 0.2 0.1 0.1 0.05 0 0 0.0 0.1 0.2 0.3 0.4 V GS [V] I D [A] Rev. 2.0 page 5 2004-04-29 BSS131 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.1 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=56 µA parameter: I D 50 2.4 40 2 98 % 1.6 R DS(on) [Ω ] 30 V GS(th) [V] 1.2 typ 20 98 % 0.8 2% 10 typ 0.4 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 100 150 °C 25 °C 150 °C, 98% 25 °C, 98% 102 Ciss 10-1 C [pF] 101 Coss I F [A] 10-2 Crss 100 0 10 20 30 10-3 0 0.4 0.8 1.2 1.6 2 2.4 2.8 V DS [V] V SD [V] Rev. 2.0 page 6 2004-04-29 BSS131 13 Typ. gate charge V GS=f(Q gate); I D=0.1 A pulsed parameter: V DD 12 300 290 280 270 8 14 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 120V 10 V GS [V] 48 V 192 V V BR(DSS) [V] 260 250 240 230 220 6 4 2 210 0 0 0.5 1 1.5 2 2.5 200 -60 -20 20 60 100 140 Q gate [nC] T j [°C] Rev. 2.0 page 7 2004-04-29 BSS131 Package Outline: Footprint: Packaging: Rev. 2.0 page 8 2004-04-29 BSS131 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 9 2004-04-29