BSS139_09

BSS139 SIPMOS® Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant Product Summary V DS R DS(on),max I DSS,min 250 30 0.03 V Ω A PG-SOT-23 Type BSS139 BSS139 Package PG-SOT-23 PG-SOT-23 Tape and Reel Information L6327: 3000 pcs/reel L6906: 3000 pcs/reel sorted in V GS(th) bands1) Marking STs STs Pb-free Yes Yes Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Reverse diode d v /dt Gate source voltage ESD class (JESD22-A114-HBM) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 0.10 0.08 0.4 6 ±20 0 (2|I D|R DS(on)max, I D=0.08 A Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current 250 -2.1 - -1.4 - -1 0.1 V µA 30 0.060 12.5 7.8 0.13 10 10 30 14 S nA mA Ω Threshold voltage V GS(th) sorted in bands2) J K L M N 2) V GS(th) V DS=3 V, I D=56 µA -1.2 -1.35 -1.5 -1.65 -1.8 - -1 -1.15 -1.3 -1.45 -1.6 V Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.7 page 2 2009-08-18 BSS139 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=-3 V, I F=0.1 A, T j=25 °C V R=50 V, I F=0.04 A, di F/dt =100 A/µs 0.81 8.6 2.1 0.10 0.4 1.2 12.9 3.1 V ns nC A Q gs Q gd Qg V plateau V DD=200 V, I D=0.04 A, V GS=-3 to 5 V 0.14 1.3 2.3 -0.28 0.21 2.0 3.5 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=125 V, V GS=-3...5 V, I D=0.04 A, R G=6 Ω V GS=-3 V, V DS=25 V, f =1 MHz 60 6.7 2.6 5.8 5.4 29 182 76 8.4 3.3 8.7 8.1 43 273 ns pF Values typ. max. Unit Rev. 1.7 page 3 2009-08-18 BSS139 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V 0.4 0.12 0.3 0.08 P tot [W] 0.2 I D [A] 0.04 0 0 40 80 120 160 0 40 80 120 160 0.1 0 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p 100 limited by on-state resistance 100 µs 1 ms 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 10 µs 10-1 0.5 10 ms 10 2 Z thJA [K/W] 0.2 0.1 0.05 I D [A] 10-2 DC 101 0.02 0.01 single pulse 10 -3 10-4 10 0 100 10 1 10 2 10 3 10-4 10-3 10-2 10-1 100 101 102 V DS [V] t p [s] Rev. 1.7 page 4 2009-08-18 BSS139 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 0.2 V 10 V1 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 30 -0.2 V 0V 0.1 V 0.2 V 0.5 V -0.1 V 0.16 V 0.5 20 V 0.2 0.08 V 0.1 V0 V 0.1- R DS(on) [Ω ] 0.12 I D [A] 1V 10 10 V 0.04 V 0.2- 0 0 2 4 6 8 10 0 0 0.04 0.08 0.12 0.16 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 0.3 0.25 0.25 0.2 0.2 25 °C -55 °C 0.15 I D [A] 0.15 150 °C g fs [S] 0.1 0.05 0 0.1 0.05 0 -2 -1 0 1 0.00 0.05 0.10 0.15 0.20 V GS [V] I D [A] Rev. 1.7 page 5 2009-08-18 BSS139 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.015 A; V GS=0 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=3 V; I D=56 µA parameter: I D 60 0 50 -0.5 40 -1 %98 R DS(on) [Ω ] 30 V GS(th) [V] %98 -1.5 typ 20 typ -2 %2 10 -2.5 0 -60 -20 20 60 100 140 180 -3 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Threshold voltage bands I D=f(V GS); V DS=3 V; T j=25 °C 12 Typ. capacitances C =f(V DS); V GS=-3 V; f =1 MHz 10 1000 1 100 Ciss I D [mA] M K L J 0.1 N C [pF] 10 56 µA Coss Crss 0.01 -2 -1.5 -1 -0.5 1 0 5 10 15 20 25 30 V GS [V] V DS [V] Rev. 1.7 page 6 2009-08-18 BSS139 13 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 1 15 Typ. gate charge V GS=f(Q gate); I D=0.1 A pulsed parameter: V DD 8 6 150 °C, 98% 0.2 VDS(max) 0.5 VDS(max) 0.1 150 °C 25 °C 4 0.8 VDS(max) I F [A] 25 °C, 98% V GS [V] 2 0.01 0 -2 0.001 0 0.4 0.8 1.2 1.6 -4 0 1 2 3 V SD [V] Q gate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 300 280 V BR(DSS) [V] 260 240 220 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.7 page 7 2009-08-18 BSS139 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.7 page 8 2009-08-18 BSS139 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.7 page 9 2009-08-18