BSS159N

BSS159N SIPMOS® Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant Product Summary V DS R DS(on),max I DSS,min 60 8 0.13 V Ω A SOT-23 Type BSS159 BSS159 Package PG-SOT-23 PG-SOT-23 Pb-free Yes Yes Tape and Reel Information L6327: 3000 pcs/reel L6906: 3000 pcs/reel sorted in V GS(th) bands1) Marking SGs SGs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.23 A, V DS=60 V, di /dt =200 A/µs, T j,max=150 °C Value 0.23 0.18 0.92 Unit A Reverse diode d v /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) V GS ±20 Class 0 V P tot T j, T stg T A=25 °C 0.36 -55 ... 150 55/150/56 W °C see table on next page and diagram 11 Rev. 1.32 page 1 2006-12-11 BSS159N Parameter Symbol Conditions min. Thermal characteristics Thermal characteristics R thJA minimal footprint 350 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics V (BR)DSS V GS=-10 V, I D=250 µA V GS(th) I D(off) V DS=3 V, I D=26 µA V DS=60 V, V GS=-10 V, T j=25 °C V DS=60 V, V GS=-10 V, T j=125 °C Gate-source leakage current On-state drain current Drain-source on-state resistance I GSS I DSS R DS(on) V GS=20 V, V DS=0 V V GS=0 V, V DS=10 V V GS=0 V, I D=0.07 A V GS=10 V, I D=0.16 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.16 A Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current 60 -3.5 - -2.8 - -2.4 0.1 V µA 130 0.1 3.9 1.7 0.19 10 10 8 3.5 S nA mA Ω Threshold voltage V GS(th) sorted in bands2) J K L M N 2) V GS(th) V DS=3 V, I D=26 µA -2.6 -2.75 -2.9 -3.05 -3.2 - -2.4 -2.55 -2.7 -2.85 -3 V Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.32 page 2 2006-12-11 BSS159N Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Dynamic characteristics Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=-3 V, I F=0.16 A, T j=25 °C V R=30 V, I F=0.16 A, di F/dt =100 A/µs 0.79 10.4 3.3 0.20 0.81 1.2 13 4.1 V ns nC A Q gs Q gd Qg V plateau V DD=40 V, I D=0.16 A, V GS=-3 to 5 V 0.14 0.7 2.2 -0.14 0.21 1.1 2.9 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=25 V, V GS=-3…7 V, I D=0.16 A, R G=6 Ω V GS=-10 V, V DS=25 V, f =1 MHz 33 8.3 3.9 3.1 2.9 9 9 44 11 5.9 4.7 4.4 13 13 ns pF Values typ. max. Unit Rev. 1.32 page 3 2006-12-11 BSS159N 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V 0.4 0.24 0.2 0.3 0.16 P tot [W] 0.2 0.1 0.04 0 0 40 80 120 160 I D [A] 0.12 0.08 0 0 40 80 120 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C; D =0 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 101 103 limited by on-state resistance 100 100 µs 0.5 102 0.2 0.1 0.05 0.02 0.01 single pulse I D [A] 1 ms 10-1 10 ms 100 ms -2 Z thJA [K/W] 10 1 10 DC 10-3 10 0 100 10 1 10 2 10-4 10-3 10-2 10-1 100 101 102 V DS [V] t p [s] Rev. 1.32 page 4 2006-12-11 BSS159N 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 0.6 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 10 -0.2 V 0V -0.1 V 0.1 V 0.2 V 0.5 V 0.5 10 V 1V 0.5 V 8 0.4 0.2 V 0.3 0V -0.1 V -0.2 V R DS(on) [Ω ] 0.1 V 6 I D [A] 4 1V 0.2 0.1 2 10 V 0 0 2 4 6 8 10 0 0 0.1 0.2 0.3 0.4 0.5 0.6 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 0.6 0.3 0.5 0.25 0.4 0.2 0.3 g fs [S] -4 -3 -2 -1 0 1 I D [A] 0.15 0.2 0.1 0.1 0.05 0 0 0.00 0.10 0.20 0.30 V GS [V] I D [A] Rev. 1.32 page 5 2006-12-11 BSS159N 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.07 A; V GS=0 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=3 V; I D=26 µA parameter: I D 20 -2 16 -2.4 98 % typ R DS(on) [Ω ] 12 98 % 8 V GS(th) [V] -2.8 -3.2 2% 4 typ -3.6 0 -60 -20 20 60 100 140 180 -4 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Threshold voltage bands I D=f(V GS); V DS=3 V; T j=25 °C 12 Typ. capacitances C =f(V DS); V GS=-10 V; f =1 MHz 1 102 Ciss 0.1 I D [mA] N M L K J 26 µA 101 0.01 C [pF] Coss Crss 0.001 -3.5 -3 -2.5 -2 100 0 10 20 30 40 V GS [V] V DS [V] Rev. 1.32 page 6 2006-12-11 BSS159N 13 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 1 15 Typ. gate charge V GS=f(Q gate); I D=0.16 A pulsed parameter: V DD 6 5 0.2 VDS(max) 0.5 VDS(max) 150 °C, 98% 25 °C 150 °C 4 0.8 VDS(max) 3 0.1 25 °C, 98% 2 V GS [V] 0.01 I F [A] 1 0 -1 -2 -3 0.001 0 0.4 0.8 1.2 -4 0 1 2 V SD [V] Q gate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 70 V BR(DSS) [V] 50 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.32 page 7 2006-12-11 BSS159N Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.32 page 8 2006-12-11 BSS159N Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.32 page 9 2006-12-11