BSS169

BSS169 SIPMOS® Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated Product Summary V DS R DS(on),max I Dss,min 100 12 0.09 V Ω A SOT-23 Type BSS169 Package SOT-23 Ordering Code Q67000-S322 Tape and Reel Information E6327: 3000 pcs/reel Marking SFs Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.17 A, V DS=80 V, di /dt =200 A/µs, T j,max=150 °C Value 0.17 0.14 0.68 Unit A Reverse diode dv /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS ±20 Class 1 V P tot T j, T stg T A=25 °C 0.36 -55 ... 150 55/150/56 W °C Rev. 1.0 page 1 2003-03-26 BSS169 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA 350 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current V (BR)DSS V GS=-10 V, I D=250 µA V GS(th) I D(off) V DS=3 V, I D=50 µA V DS=100 V, V GS=-10 V, T j=25 °C V DS=100 V, V GS=-10 V, T j=125 °C Gate-source leakage current Saturated drain current Drain-source on-state resistance I GSS I DSS R DS(on) V GS=20 V, V DS=0 V V GS=0 V, V DS=10 V V GS=0 V, I D=0.05 A V GS=10 V, I D=0.17 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.14 A 100 -2.9 -2.2 -1.8 0.1 µA V 90 0.10 5.3 2.9 0.19 10 10 12 6 S nA mA Ω Rev. 1.0 page 2 2003-03-26 BSS169 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=-10 V, I F=0.17 A, T j=25 °C V R=50 V, I F=0.12 A, di F/dt =100 A/µs 0.79 20.5 9.7 0.17 0.68 1.2 25.6 12.1 V ns nC A Q gs Q gd Qg V plateau V DD=80 V, I D=0.12 A, V GS=-3 to 7 V 0.12 0.9 2.1 -0.43 0.16 1.4 2.8 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=50 V, V GS=-3…7 V, I D=0.12 A, R G=6 Ω V GS=-10 V, V DS=25 V, f =1 MHz 51 9 4 2.9 2.7 11 27 68 13 7 4.2 4.0 17 40 ns pF Values typ. max. Unit Rev. 1.0 page 3 2003-03-26 BSS169 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V 0.4 0.2 0.16 0.3 0.12 P tot [W] 0.2 I D [A] 0.08 0.04 0 0 40 80 120 160 0 40 80 120 160 0.1 0 T A [°C] T A [°C] 3 Safe operation area I D=f(V DS); T A=25 °C; D =0 parameter: t p 1 limited by on-state resistance 10 µs 100 µs 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 1000 1 ms 0.5 0.1 10 ms 100 0.2 Z thJA [K/W] I D [A] 0.1 0.05 0.02 0.01 DC 10 0.01 single pulse 0.001 1 10 100 1000 1 0 -4 10 10-3 0 10-2 0 -1 100 10 0 1 101 10 10 2 100 V DS [V] t p [s] Rev. 1.0 page 4 2003-03-26 BSS169 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 0.5 10 V 1V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 15 -0.2 V 0V 0.2 V 0.5 V -0.1 V 0.1 V 0.4 0.5 V 10 I D [A] 0.2 V 0.1 V 0V R DS(on) [Ω ] 0.3 0.2 1V -0.1 V -0.2 V 5 0.1 10 V 0 0 2 4 6 8 10 0 0 0.1 0.2 0.3 0.4 0.5 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 0.5 0.4 0.4 0.3 0.3 g fs [S] 0.2 0.1 0 -2 -1 0 1 2 I D [A] 0.2 0.1 0 0.0 0.1 0.2 0.3 0.4 0.5 V GS [V] I D [A] Rev. 1.0 page 5 2003-03-26 BSS169 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.05 A; V GS=0 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=3 V; I D=50 µA parameter: I D 25 -1 20 -1.5 98 % R DS(on) [Ω ] 15 98 % V GS(th) [V] -2 typ 10 -2.5 5 typ -3 2% 0 -60 -20 20 60 100 140 180 -3.5 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. Capacitances C =f(V DS); V GS=-10 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 1000 1 150 °C 25 °C 150 °C, 98 % 0.1 100 Ciss 25 °C, 98 % C [pF] I F [A] 10 Coss Crss 0.01 0.001 1 0 5 10 15 20 25 30 0.0001 0 0.5 1 1.5 V DS [V] V SD [V] Rev. 1.0 page 6 2003-03-26 BSS169 14 Typ. gate charge V GS=f(Q gate); I D=0.12 A pulsed parameter: V DD 8 0.5 VDS(max) 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 120 6 110 4 2 V BR(DSS) [V] 2.5 0.2 VDS(max) 0.8 VDS(max) V GS [V] 100 0 90 -2 -4 0 0.5 1 1.5 2 80 -60 -20 20 60 100 140 180 Q gate [nC] T j [°C] Rev. 1.0 page 7 2003-03-26 BSS169 Package Outline: Footprint: Packaging: Rev. 1.0 page 8 2003-03-26 BSS169 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts started herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2003-03-26