BSS192P

BSS 192 P SIPMOS Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated Drain pin 2 Gate pin1 Source pin 3 3 Product Summary VDS RDS(on) ID -250 12 -0.19 PG-SOT89 1 2 V Ω A 2 VPS05162 Type BSS 192 P Package PG-SOT89 Pb-free Yes Tape and Reel Information L6327: 1000 pcs/reel Marking KC Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -0.19 -0.1 Unit A Pulsed drain current TA=25°C ID puls dv/dt VGS Ptot Tj , Tstg -0.76 6 ±20 1 -55... +150 55/150/56 kV/µs V W °C Reverse diode dv/dt IS =-0.19A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 1.3 Page 1 2006-12-04 BSS 192 P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 2) Thermal resistance, junction - ambient, leaded RthJA 125 RthJS 10 K/W Symbol min. Values typ. max. Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) RDS(on) -250 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-130µA Zero gate voltage drain current VDS =-250V, VGS =0, Tj =25°C VDS =-250V, VGS =0, Tj =150°C µA -0.1 -10 -10 10 8.3 7.7 -0.2 -100 -100 20 15 12 nA Ω Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-2.8V, ID =-0.025A Drain-source on-state resistance VGS =-4.5V, ID =-0.1A Drain-source on-state resistance VGS =-10V, ID =-0.19A Rev 1.3 Page 2 2006-12-04 BSS 192 P Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, IF=-0.19A VR =-125V, IF =lS , diF /dt=100A/µs Symbol Conditions min. Values typ. 0.38 83 13 6 4.7 5.2 72 50 max. 104 16 8 7 8 108 75 Unit gfs Ciss Coss Crss td(on) tr td(off) tf |VDS|≥2*|ID |*RDS(on)max , ID =-0.1A VGS =0, VDS =-25V, f=1MHz 0.19 - S pF VDD =-125V, VGS =-10V, ID =-0.19A, RG=2Ω ns Qgs Qgd Qg VDD =-200V, ID=-0.19A - -0.2 -1.9 -4.9 -2.63 -0.25 nC -2.4 -6.1 V VDD =-200V, ID=-0.19A, VGS =0 to -10V V(plateau) VDD =-200V, ID=-0.19A IS TA=25°C - -0.78 46 72 -0.19 A -0.76 -1.1 57 90 V ns nC Rev 1.3 Page 3 2006-12-04 BSS 192 P 1 Power dissipation Ptot = f (TA ) 1.1 BSS 192 P 2 Drain current ID = f (TA ) parameter: |VGS | ≥ 10V -0.2 BSS 192 P W 0.9 0.8 A -0.16 -0.14 Ptot ID 20 40 60 80 100 120 0.7 0.6 -0.12 -0.1 0.5 -0.08 0.4 0.3 0.2 0.1 0 0 -0.06 -0.04 -0.02 0 0 °C 160 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25°C -10 1 BSS 192 P 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T K/W 10 3 BSS 192 P A 10 2 -10 0 tp = 240.0 µs 10 1 ID 1 ms Z thJA 10 ms 10 0 D = 0.50 0.20 0.10 on ) = -10 -1 DS ( V DS /I D 10 -1 R -10 -2 10 -2 0.05 0.02 DC 10 -3 single pulse 0.01 -10 -3 -1 -10 -10 0 -10 1 -10 2 V -10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Rev 1.3 Page 4 tp 2006-12-04 BSS 192 P 5 Typ. output characteristic ID = f (VDS ) parameter: Tj =25°C, -VGS 0.7 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS ; Tj =25°C, -VGS 15 10V A 6V 4.6V 4V 3.6V 0.5 3.4V 3.2V 2.8V 0.4 2.6V 2.4V 0.3 Ω 12 2.4V 2.6V 2.8V 3.2V RDS(on) 10.5 9 7.5 6 4.5 3 -I D 0.2 10V 6V 4.6V 4V 3.6V 3.4V 0.1 1.5 0 0 0 0 1 2 3 4 5 6 7 8 V 10 0.1 0.2 0.3 0.4 0.5 A 0.7 -VDS -ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS |≥ 2 x |ID | x RDS(on)max parameter: Tj = 25 °C 0.7 8 Typ. forward transconductance gfs = f(ID) parameter: Tj =25°C 0.8 A S 0.6 0.5 -I D g fs 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3.5 0.5 0.4 0.3 0.2 0.1 V 0 0 0.1 0.2 0.3 0.4 0.5 A 0.7 -VGS Rev 1.3 Page 5 -ID 2006-12-04 BSS 192 P 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -0.19 A, VGS = -10 V 32 BSS 192 P 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.2 V 98% Ω RDS(on) 24 - VGS(th) 1.8 1.6 typ. 20 1.4 16 98% 12 1 8 typ 0.8 0.6 0.4 -60 2% 1.2 4 0 -60 -20 20 60 100 °C 180 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 °C 10 3 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj -10 0 BSS 192 P pF A Ciss 10 2 -10 -1 C Coss 10 1 IF -10 -2 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -10 -3 0 Crss 6 12 18 24 V 36 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 -VDS Rev 1.3 Page 6 VSD 2006-12-04 BSS 192 P 13 Typ. gate charge VGS = f (QGate ) parameter: ID = -0.19 A pulsed, Tj = 25 °C -16 V BSS 192 P BSS 192 P 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -300 V -12 V(BR)DSS 50% 80% nC -285 -280 -275 -270 -265 -260 VGS -10 -8 20% -6 -255 -250 -245 -240 -4 -2 -235 -230 0 0 1 2 3 4 5 6 7.5 -225 -60 -20 20 60 100 °C 180 |Q G| Tj Rev 1.3 Page 7 2006-12-04 BSS 192 P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.3 Page 8 2006-12-04