BSS209PW_06

BSS 209PW OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated 2 1 VSO05561 Product Summary VDS RDS(on) ID 3 -20 550 -0.58 PG-SOT-323 V mΩ A Drain pin 3 Type BSS 209PW Package PG-SOT-323 Tape and Reel L6327:3000pcs/r. Marking X3s Gate pin1 Source pin 2 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -0.58 -0.46 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -2.3 3.5 -6 ±12 0.52 -55... +150 55/150/56 Avalanche energy, single pulse ID =-0.58 A , VDD =-10V, RGS =25Ω mJ kV/µs V W °C Reverse diode dv/dt IS =-0.58A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 1.3 Page 1 2006-12-04 BSS 209PW Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJS RthJA - Values typ. max. 120 240 160 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6 Values typ. -0.9 max. -1.2 Unit V Gate threshold voltage, VGS = VDS ID =-3.5µA Zero gate voltage drain current VDS =-20V, VGS =0, Tj =25°C VDS =-20V, VGS =0, Tj =150°C µA -0.1 -10 -10 563 369 -1 -100 -100 900 550 nA mΩ Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-0.46A Drain-source on-state resistance VGS =-4.5, ID =-0.58A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev 1.3 Page 2 2006-12-04 BSS 209PW Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =-10V, VGS =-4.5V, ID =-0.58A, RG=6Ω çVDS ç≥2*çIDç*RDS(on)max ID =-0.46A VGS =0, VDS =-15V, f=1MHz Symbol Conditions min. 0.87 - Values typ. 1.74 89.9 40.1 31.5 4.4 5.8 7.6 4.5 max. 6.6 8.7 11.4 6.7 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, |IF | = |ID | VR =-10V, |IF | = |lD |, diF /dt=100A/µs Qgs Qgd Qg VDD =-10V, ID =-0.58A - -0.12 -0.74 -0.92 -1.7 -0.17 nC -1.1 -1.38 V VDD =-10V, ID =-0.58A, VGS =0 to -4.5V V(plateau) VDD =-10V, ID =-0.58A IS ISM TA=25°C - -1.3 9 1.27 -0.5 -2.3 A -0.88 V 11.2 1.59 ns nC Rev 1.3 Page 3 2006-12-04 BSS 209PW 1 Power dissipation Ptot = f (TA ) 0.85 BSS 209PW 2 Drain current ID = f (TA ) parameter: |VGS |≥ 4.5 V -0.65 BSS 209PW W 0.7 A -0.55 -0.5 0.6 -0.45 Ptot ID 20 40 60 80 100 120 0.5 0.4 -0.4 -0.35 -0.3 -0.25 0.3 -0.2 0.2 0.1 -0.05 0 0 -0.15 -0.1 °C 160 0 0 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 1 BSS 209PW 4 Transient thermal impedance ZthJS = f (tp ) parameter : D = tp /T 10 3 BSS 209PW K/W A D tp = 82.0 µs 100 µs ) = V DS /I 10 2 ID R DS ( -10 0 1 ms Z thJS on 10 1 10 ms 10 0 D = 0.50 0.20 -10 -1 10 -1 0.10 0.05 single pulse 0.02 0.01 10 -2 DC -10 -2 -1 -10 10 -3 -7 10 -10 0 -10 1 V -10 2 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Rev 1.3 Page 4 tp 2006-12-04 BSS 209PW 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 4 Vgs = -3V Vgs = -3.5V 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 1 Vgs = -2.2V Vgs = -2.5V Ω Vgs = -2.8V A Vgs = -4V - ID RDS(on) 0.8 0.7 Vgs = -2.5V 2 0.6 Vgs = - 3V Vgs= - 3.5V Vgs = - 4V Vgs = - 4.5V Vgs= - 5V Vgs= - 6V Vgs = - 7V Vgs = -4.5V Vgs = -7V 1 Vgs = -2.2V 0.5 Vgs = -2V 0.4 Vgs = -1.8V 0.3 0 0 1 2 3 4 5 6 7 8 V 10 0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 A 2 - V DS - ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max parameter: tp = 80 µs 6 A 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: tp = 80 µs 4 S 5 4.5 3 - ID 4 gfs V 2.5 3.5 3 2.5 2 1.5 2 1.5 1 0.5 0.5 0 0 0.5 1 1.5 2 2.5 3.5 0 0 1 2 3 4 A 1 6 - V GS - ID Rev 1.3 Page 5 2006-12-04 BSS 209PW 9 Drain-source on-resistance RDS(on) = f(Tj ) parameter: ID = -0.58 A, VGS = -4.5 V 700 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -3.5 µA 1.4 mΩ V 600 RDS(on) V GS(th) 1 98% 550 500 450 400 98% 0.8 typ. 0.6 0.4 350 300 250 -60 typ. 2% 0.2 -20 20 60 100 °C 160 Tj 0 -60 -20 20 60 100 °C 160 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz 10 3 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs -10 1 BSS 209PW A pF -10 0 C 10 2 Ciss Coss IF -10 -1 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 V 20 -10 -2 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 - VDS VSD Page 6 Rev 1.3 2006-12-04 BSS 209PW 13 Typ. avalanche energy EAS = f (Tj ), par.: ID = -0.58 A VDD = -10 V, RGS = 25 Ω 4 14 Typ. gate charge |VGS| = f (QGate ) parameter: ID = -0.58 A pulsed 12 V mJ 10 3 9 - VGS E AS 8 7 0.2 Vds max 2.5 2 6 5 0.5 Vds max 0.8 Vds max 1.5 4 1 3 2 0.5 1 0 25 50 75 100 °C Tj 150 0 0 0.5 1 1.5 2 nC 3 |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSS 209PW V -23.5 V (BR)DSS -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Rev 1.3 Page 7 2006-12-04 BSS 209PW Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.3 Page 8 2006-12-04