BSS225

Type BSS225 SIPMOS® Small-Signal-Transistor Feature • n-channel • enhancement mode • Logic level • dv /dt rated Product Summary V DS 1) 600 45 0.09 V Ω A R DS(on),max ID SOT89 Type BSS225 Package SOT89 Pb-free Yes Tape and Reel Information L6327: 3000PCS/reel Marking KD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current I D,pulse T A=25 °C I D=0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Value 0.09 0.073 0.36 Unit A Reverse diode d v /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS ±20 Class 1a V P tot T j, T stg T A=25 °C 1.00 -55 ... 150 55/150/56 W °C Rev. 1.23 page 1 2011-03-08 BSS225 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint Values typ. max. Unit R thJA - - 125 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current 1) V (BR)DSS V GS=0 V, I D=250 µA V GS(th) I D (off) V DS=0 V, I D=94 µA V DS=600 V, V GS=0 V, T j=25 °C V DS=600 V, V GS=0 V, T j=150 °C 600 1.3 - 1.9 - 2.3 0.1 V µA - 10 30 5 100 45 nA Ω Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=0.09 A V GS=10 V, I D=0.09 A |V DS|>2|I D|R DS(on)max, I D=0.075 A - 28 45 Transconductance g fs 0.05 0.14 - S 1) VDS is zero-hour rated, see note at p.8 Rev. 1.23 page 2 2011-03-08 BSS225 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr V GS=0 V, I F=0.09 A, T j=25 °C V R=300 V, I F=0.09 A, di F/dt =100 A/µs T A=25 °C 0.75 246 248 0.09 0.36 1.2 370 373 V ns nC A Q gs Q gd Qg V plateau V DD=400 V, I D=0.09 A, V GS=0 to 10 V 0.32 1.4 3.9 3.3 0.43 2.1 5.8 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=300 V, V GS=10 V, I D=0.09 A, R G=6 Ω V GS=0 V, V DS=25 V, f =1 MHz 99 7.6 3.1 14.0 38.0 62.0 41.0 131 11 4.4 20.0 57.0 93 62 ns pF Values typ. max. Unit Rev. 1.23 page 3 2011-03-08 BSS225 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V 0.1 1 0.08 0.75 0.06 P tot [W] 0.5 I D [A] 0.04 0.02 0 0 40 80 120 160 0 40 80 120 160 0.25 0 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p 100 20 µs limited by on-state resistance 100 µs -1 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 102 0.5 10 1 ms 0.2 Z thJA [K/W] I D [A] 0.1 101 0.05 0.02 0.01 1000 ms 100 DC single pulse 10-3 1 10 100 1000 10-1 10-5 10-4 10-3 10-2 10-1 100 101 102 103 V DS [V] t p [s] Rev. 1.23 page 4 2011-03-08 BSS225 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 0.3 V 10 V5 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 2.6 V V 3 3.2 V 3.6 V 3.8 V 4V 40 38 5V 0.25 V4 36 10 V 34 0.2 V 3.8 0.15 V 3.6 R DS(on) [Ω ] 10 32 30 28 26 24 22 I D [A] 0.1 V 3.2 V3 0.05 V 2.6 0 0 1 2 3 4 5 6 7 8 9 20 0 0.1 0.2 0.3 0.4 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 0.3 0.3 0.25 0.2 0.2 g fs [S] 0.1 0 0 1 2 3 4 I D [A] 0.15 0.1 0.05 0 0.00 0.10 0.20 0.30 V GS [V] I D [A] Rev. 1.23 page 5 2011-03-08 BSS225 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.1 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=94 µA parameter: I D 130 120 110 100 90 2 2.4 %98 2.8 R DS(on) [Ω ] 80 70 60 %98 V GS(th) [V] 1.6 typ 1.2 %2 50 40 30 20 10 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 typ 0.8 0.4 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 100 150 °C 25 °C 150 °C, 98% 102 Ciss 10-1 C [pF] 101 Coss I F [A] 25 °C, 98% 10-2 Crss 100 0 10 20 30 40 50 10-3 0 0.4 0.8 1.2 1.6 2 2.4 2.8 V DS [V] V SD [V] Rev. 1.23 page 6 2011-03-08 BSS225 13 Typ. gate charge V GS=f(Q gate); I D=0.1 A pulsed parameter: V DD 12 700 680 300 V 14 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 10 660 640 8 480 V V GS [V] 120 V V BR(DSS) [V] 620 600 580 560 540 6 4 2 520 0 0 0.5 1 1.5 2 2.5 3 3.5 4 500 -60 -20 20 60 100 140 Q gate [nC] T j [°C] Rev. 1.23 page 7 2011-03-08 BSS225 Package Outline: Footprint: Packaging: Dimensions in mm note: Due to small size of the package, creeping currents between leads external to the package can occur in the application. Extra protection from contamination for the package (i.e. protective laquer) is necessary to maintain the values, specified in this document. Values given in this document are only valid for 0 hour lifetime, if no suitable external protection is applied. Rev. 1.23 page 8 2011-03-08 BSS225 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.23 page 9 2011-03-08