BSS316N

BSS316N OptiMOS™2 Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100%lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=10 V V GS=4.5 V ID 30 160 280 1.4 A V mΩ PG-SOT23 3 1 2 Type BSS316N Package SOT23 Tape and Reel Information L6327: 3000 pcs/ reel Marking SYs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=1.4 A, R GS=25 Ω Value 1.4 1.1 5.6 3.7 mJ Unit A Reverse diode d v /dt dv /dt I D=1.4 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage Power dissipation Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1 V GS P tot T j, T stg JESD22-A114 -HBM T A=25 °C ±20 0.5 -55 ... 150 0 (2|I D|R DS(on)max, I D=1.1 A 30 1.2 1.6 2.0 1 µA V - 191 119 2.3 100 100 280 160 S nA mΩ Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70µm thick and 20mm long; they are present on both sides of the PCB. 1) Rev 2.2 page 2 2010-03-25 BSS316N Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 °C V GS=0 V, I F=1.4 A, T j=25 °C V R=10 V, I F=1.4 A, di F/dt =100 A/µs 0.8 9.1 2.6 0.5 5.6 1.1 V ns nC A Q gs Q gd Qg V plateau V DD=15 V, I D=1.4 A, V GS=0 to 5 V 0.3 0.2 0.6 3.4 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=1.4 A, R G=6 Ω V GS=0 V, V DS=15 V, f =1 MHz 71 26 5 3.4 2.3 5.8 1 94 35 7 ns pF Values typ. max. Unit Rev 2.2 page 3 2010-03-25 BSS316N 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS≥10 V 1.6 0.5 1.2 0.375 P tot [W] I D [A] 0 40 80 120 0.8 0.25 0.125 0.4 0 0 0 20 40 60 80 100 120 140 160 T A [°C] T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p 101 1 µs 100 µs 1 ms 10 ms 10 µs 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 100 102 0.5 10-1 Z thJA [K/W] 0.2 I D [A] 0.1 0.05 DC 10 1 0.02 0.01 single pulse 10 -2 10-3 10 -1 100 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 101 102 V DS [V] t p [s] Rev 2.2 page 4 2010-03-25 BSS316N 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 4 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 400 10 V 4.5 V 4V 350 3 300 3.5 V 2 R DS(on) [mΩ ] 250 4V I D [A] 200 4.5 V 5V 3.5 V 150 7V 10 V 1 3.3 V 100 3V 2.8 V 50 0 0 0.5 1 1.5 2 2.5 3 0 0 1 2 3 4 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 4 6 3 4 2 g fs [S] 2 150 °C 25 °C I D [A] 1 0 0 1 2 3 4 5 0 0 2 4 6 8 V GS [V] I D [A] Rev 2.2 page 5 2010-03-25 BSS316N 9 Drain-source on-state resistance R DS(on)=f(T j); I D=1.4 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=3.7 µA parameter: I D 300 2.8 250 2.4 2 200 98 % R DS(on) [mΩ ] 98 % 150 typ V GS(th) [V] 1.6 typ 1.2 2% 100 0.8 50 0.4 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 Ciss 101 Coss 100 150 °C 25 °C C [pF] 101 Crss I F [A] 10-1 10-2 150 °C, 98% 25 °C, 98% 100 0 5 10 15 20 10-3 0 0.4 0.8 1.2 1.6 V DS [V] V SD [V] Rev 2.2 page 6 2010-03-25 BSS316N 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 101 14 Typ. gate charge V GS=f(Q gate); I D=1.4 A pulsed parameter: V DD 8 7 6 10 0 25 °C 5 15 V 6V V GS [V] I AV [A] 100 °C 24 V 4 125 °C 10-1 3 2 1 10-2 100 101 102 103 0 0 0.25 0.5 0.75 1 t AV [µs] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 16 Gate charge waveforms 36 35 34 33 32 V GS Qg V BR(DSS) [V] 31 30 V g s(th) 29 28 27 26 25 -60 -20 20 60 100 140 Q g(th) Q gs Q sw Q gd Q g ate T j [°C] Rev 2.2 page 7 2010-03-25 BSS316N SOT23 Package Outline: Footprint: Packaging: Dimensions in mm Rev 2.2 page 8 2010-03-25 BSS316N Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.2 page 9 2010-03-25