BSS7728NG

Rev. 2.3 BSS7728N G SIPMOS® Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS RDS(on) ID 60 5 0.2 PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 V Ω A Type Package Pb-free Yes Tape and Reel Information L6327: 3000 pcs/reel Marking sSK BSS7728N PG-SOT-23 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 0.2 0.16 Unit A Pulsed drain current TA=25°C I D puls dv/dt VGS Ptot T j , Tstg 0.8 6 ±20 0.36 -55... +150 55/150/56 kV/µs V W °C Reverse diode dv/dt IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2006-12-01 Rev. 2.3 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID=250µA BSS7728N Symbol min. RthJA - Values typ. max. 350 Unit K/W Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 60 1.3 Values typ. 1.9 max. 2.3 Unit V Gate threshold voltage, V GS = VDS ID=26µA Zero gate voltage drain current VDS=60V, VGS =0, Tj=25°C VDS=60V, VGS =0, Tj=150°C µA 1 4.3 2.7 0.1 5 10 7.5 5 nA Ω Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.05A Drain-source on-state resistance VGS=10V, ID=0.5A Page 2 2006-12-01 Rev. 2.3 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD Reverse recovery time Reverse recovery charge trr Qrr VGS=0, IF=IS VR=30V, IF =lS , diF/dt=100A/µs BSS7728N Symbol Conditions min. Values typ. 0.2 37 7.3 2.9 2.7 2.7 6.1 9 max. 56 11 4.4 4 4.1 9.1 13 Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS≥2*ID*RDS(on)max, ID=0.16A VGS=0, VDS=25V, f=1MHz 0.1 - S pF VDD=30V, VGS=10V, ID=0.2A, RG=6Ω ns Q gs Q gd Qg VDD =48V, ID =0.2A - 0.12 0.43 1 3.8 0.18 0.65 1.5 - nC VDD =48V, ID =0.2A, VGS =0 to 10V V(plateau) VDD =48V, ID = 0.2 A V IS TA=25°C - 0.84 11.5 2.6 0.2 0.8 1.2 17.5 4 A V ns nC Page 3 2006-12-01 Rev. 2.3 1 Power dissipation Ptot = f (TA) 0.38 BSS7728N BSS7728N 2 Drain current ID = f (TA) parameter: VGS ≥ 10 V 0.22 BSS7728N W 0.32 0.28 A 0.18 0.16 Ptot ID 20 40 60 80 100 120 0.24 0.2 0.16 0.14 0.12 0.1 0.08 0.12 0.06 0.08 0.04 0 0 0.04 0.02 °C 160 0 0 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C 10 1 BSS7728N 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 BSS7728N A K/W 10 2 10 0 t = 33.0µs p / ID =V ID DS ZthJA 100 µs 10 -1 R ) (on DS 1 ms 10 1 1 0 ms D = 0.50 10 0 0.20 0.10 10 -2 0.05 DC 10 -1 single pulse 0.02 0.01 10 -3 10 0 10 1 V 10 2 10 -2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2006-12-01 Rev. 2.3 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C, VGS 0.8 BSS7728N 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 °C, VGS 10 10V 7V 6V 5V 0.6 4.5V 4.1V 3.7V 0.5 3.5V 3.1V A Ω 8 7 6 5 4 3 3.1V 3.5V 3.7V 4.1V 4.5V 5V 6V 7V 10V 0.4 0.3 0.2 2 0.1 1 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V RDS(on) ID 5 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: Tj = 25 °C 0.8 A 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C 0.4 S 0.32 0.6 0.28 0.5 gfs V ID 0.24 0.2 0.16 0.12 0.4 0.3 0.2 0.08 0.1 0.04 0 0 0 0 1 2 3 4 6 0.1 0.2 0.3 0.4 0.5 0.6 A 0.8 VGS Page 5 ID 2006-12-01 Rev. 2.3 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.5 A, VGS = 10 V BSS7728N BSS7728N 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =26µA 2.8 Ω 15 12 V Vgs(th) 98% RDS(on) 11 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 °C 2% typ. 1.8 98% 1.3 typ 180 0.8 -60 -20 20 60 100 °C Tj 160 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 °C 10 2 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 0 BSS7728N A Ciss pF 10 -1 C 10 1 Coss IF 10 -2 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2006-12-01 Rev. 2.3 13 Typ. gate charge VGS = f (QG); parameter: V DS , ID = 0.5 A pulsed, Tj = 25 °C 16 V BSS7728N BSS7728N BSS7728N 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 72 V V(BR)DSS 1.4 nC 12 68 66 64 62 VGS 10 0.2 VDS max 0.5 VDS max 8 0.8 V DS max 6 60 4 58 56 54 -60 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.8 -20 20 60 100 °C 180 QG Tj Page 7 2006-12-01 Rev. 2.3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. BSS7728N Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2006-12-01