BSS83P

BSS 83 P SIPMOS ® Small-Signal-Transistor Features · P-Channel · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current VDS RDS(on) ID 3 -60 2 -0.33 V Enhancement mode W A · Avalanche rated · Logic Level · dv/dt rated 2 1 VPS05161 Type BSS 83 P Package PG-SOT-23 Tape and Reel Marking Pin 1 G PIN 2 S PIN 3 D L6327: 3000pcs/r. YAs Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value -0.33 -0.27 Unit A ID T A = 25 °C T A = 70 °C Pulsed drain current I D puls EAS EAR dv/dt -1.32 9.5 0.036 6 kV/µs T A = 25 °C Avalanche energy, single pulse I D = -0.33 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt mJ I S = -0.33 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C Gate source voltage Power dissipation VGS Ptot T j , T stg ±20 0.36 -55...+150 55/150/56 V W °C T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.2 Page 1 2006-12-05 BSS 83 P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point ( Pin 3 ) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. max. 150 K/W Unit RthJS RthJA - - - 350 300 Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -1.5 max. -2 µA -0.1 -10 -10 2 1.4 -1 -100 -100 3 2 nA V Unit V(BR)DSS VGS(th) IDSS -60 -1 VGS = 0 V, I D = -250 µA Gate threshold voltage, VGS = VDS I D = -80 µA Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 °C VDS = -60 V, V GS = 0 V, T j = 125 °C Gate-source leakage current IGSS RDS(on) RDS(on) - VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -4.5 V, I D = -0.27 A Drain-source on-state resistance VGS = -10 V, I D = -0.33 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 1.2 Page 2 2006-12-05 BSS 83 P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Input capacitance Values typ. max. Unit VDS³2*I D*RDS(on)max , ID = -0.27 A VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance gfs Ciss Coss Crss t d(on) 0.24 - 0.47 62 19 7 23 78 24 9 35 S pF VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Rise time tr - 71 106 VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Turn-off delay time t d(off) - 56 70 VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Fall time tf - 61 76 VDD = -30 V, V GS = -4.5 V, I D = -0.27 A, RG = 43 W Rev. 1.2 Page 3 2006-12-05 BSS 83 P Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Gate to source charge Values typ. max. Unit Q gs Q gd Qg V(plateau) - 0.12 1.1 2.38 -2.94 0.18 1.65 3.57 - nC VDD = -48 V, ID = -0.33 A Gate to drain charge VDD = -48 , ID = -0.33 A Gate charge total VDD = -48 V, ID = -0.33 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -0.33 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. -0.84 59.4 37.5 max. -0.33 -1.32 -1.1 89 56 Unit IS ISM VSD trr Qrr - A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage V ns nC VGS = 0 V, I F = -0.33 Reverse recovery time VR = -30 V, IF=I S , di F/dt = 80 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 80 A/µs Rev. 1.2 Page 4 2006-12-05 BSS 83 P Power Dissipation Drain current parameter: VGS ³ 10 V BSS 83 P Ptot = f (TA) BSS 83 P ID = f (TA ) 0.38 -0.36 W A 0.32 -0.28 0.28 -0.24 Ptot ID -0.20 -0.16 -0.12 -0.08 -0.04 0.00 0 0.24 0.20 0.16 0.12 0.08 0.04 0.00 0 20 40 60 80 100 120 °C 160 20 40 60 80 100 120 °C 160 TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T A = 25 °C -10 1 ZthJC = f (tp ) parameter : D = tp /T 10 3 BSS 83 P BSS 83 P A tp = 88.0 µs 100 µs K/W -10 0 /I D = 10 2 ID RD -10 -1 S( ) on 1 ms Z thJC 10 1 D = 0.50 10 ms VD S 0.20 0.10 -10 -2 DC 10 0 0.05 single pulse 0.02 0.01 -10 -3 -1 -10 -10 0 -10 1 V -10 2 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Rev. 1.2 Page 5 tp 2006-12-05 BSS 83 P Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25°C parameter: tp = 80 µs BSS 83 P RDS(on) = f (ID ) parameter: VGS BSS 83 P -0.80 Ptot = 0W jk i hlf e d g VGS [V] a -2.5 b -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0 W 6.5 a b c A 5.5 5.0 c RDS(on) -0.60 c d e f g 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 d e lfg i j hk ID -0.50 -0.40 h i -0.30 j bk l -0.20 -0.10 a VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 g h i j -5.5 -6.0 -6.5 -7.0 k l -8.0 -10.0 0.5 0.00 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V -5.0 0.0 0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A -0.65 VDS ID Typ. transfer characteristics I D= f ( V GS ) VDS³ 2 x I D x RDS(on)max parameter: tp = 80 µs -1.2 A Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0.70 S -1.0 -0.9 -0.8 0.60 0.55 0.50 ID 0.45 gfs V -0.7 -0.6 -0.5 -0.4 -0.3 0.40 0.35 0.30 0.25 0.20 0.15 -0.2 -0.1 0.0 0.0 -1.0 -2.0 -3.0 -4.0 -6.0 0.10 0.05 0.00 0.00 -0.10 -0.20 -0.30 -0.40 -0.50 A ID -0.70 VGS Rev. 1.2 Page 6 2006-12-05 BSS 83 P Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) parameter : I D = -0.33 A, VGS = -10 V BSS 83 P VGS(th) = f (Tj) parameter: VGS = VDS , ID = -80 µA -3.0 W RDS(on) 5.5 V 4.5 4.0 3.5 3.0 -1.5 2.5 2.0 1.5 1.0 0.5 0.0 -60 -20 20 60 100 °C V GS(th) 98% -2.0 typ 98% 2% typ -1.0 -0.5 180 0.0 -60 -20 20 60 100 Tj 160 °C Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) parameter: VGS=0V, f=1 MHz 10 3 IF = f (VSD ) parameter: Tj , tp = 80 µs -10 1 BSS 83 P pF A 10 2 -10 0 Ciss C Coss 10 1 -10 -1 Crss IF Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 -25 V -35 -10 -2 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD Page 7 Rev. 1.2 2006-12-05 BSS 83 P Avalanche energy Typ. gate charge EAS = f (Tj) para.: I D = -0.33 A , VDD = -25 V, RGS = 25 10 VGS = f (QGate ) parameter: ID = -0.33 A pulsed BSS 83 P -16 mJ V 8 -12 7 E AS VGS 6 5 4 3 -10 -8 0,2 VDS max 0,8 VDS max -6 -4 2 1 0 25 -2 45 65 85 105 125 °C 165 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 nC 3.4 Tj QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) BSS 83 P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 V(BR)DSS -20 20 60 100 °C 180 Tj Rev. 1.2 Page 8 2006-12-05 BSS 83 P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 Page 9 2006-12-05