BSS84P

BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary VDS RDS(on) ID 3 · P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated -60 8 -0.17 PG-SOT-23 V W A 2 1 Type BSS 84 P BSS 84 P Package PG-SOT-23 PG-SOT-23 Tape and Reel Marking VPS05161 L6327:3000pcs/r. YBs L6433:10000pcs/r. YBs Gate pin1 Drain pin 3 Source pin 2 Maximum Ratings, at TA = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -0.17 -0.14 Unit A Pulsed drain current TA=25°C I D puls EAS EAR dv/dt VGS Ptot T j , Tstg -0.68 2.6 0.036 -6 ±20 0.36 -55... +150 55/150/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=-0.17 A , VDD=-25V, RGS=25W Avalanche energy, periodic limited by Tjmax Reverse diode d v/dt IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 2.4 Page 1 2006-12-05 BSS 84 P Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJS RthJA - Values typ. max. 200 Unit K/W - 350 300 Electrical Characteristics , at TA = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID =-250µA Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) -60 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID=-20µA Zero gate voltage drain current VDS=-60V, VGS=0, TA =25°C VDS=-60V, VGS=0, TA =125°C µA -0.1 -10 -10 8 5.8 -1 -100 -100 12 8 nA Gate-source leakage current VGS=-20V, VDS=0 Drain-source on-state resistance VGS=-4.5V, ID=-0.14A W Drain-source on-state resistance VGS=-10V, ID=-0.17A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.4 Page 2 2006-12-05 BSS 84 P Electrical Characteristics , at TA = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD=-30V, VGS=-4.5V, ID=-0.14A, RG=25W VDS£2*ID*RDS(on)max , ID=-0.14A VGS=0, VDS=-25V, f=1MHz Symbol Conditions min. 0.065 - Values typ. 0.13 15 6 2 6.7 16.2 8.6 20.5 max. 19 8 3 10 24.3 12.9 30.8 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS=0, IF=-0.17A VR=-30V, IF=lS, diF/dt=100A/µs Qgs Qgd Qg VDD=-48V, ID=-0.17A - 0.25 0.3 1 -3.42 0.37 0.45 1.5 - nC VDD=-48V, ID=-0.17A, VGS=0 to -10V V(plateau) VDD=-48V, ID=-0.17A V IS TA=25°C - -0.93 23 10 -0.17 A -0.68 -1.24 V 34 15 ns nC Rev 2.4 Page 3 2006-12-05 BSS 84 P 1 Power dissipation Ptot = f (TA) 0.38 BSS 84 P 2 Drain current ID = f (TA) parameter: VGS ³ 10 V BSS 84 P -0.18 W A 0.32 -0.14 0.28 P tot ID 20 40 60 80 100 120 0.24 0.2 0.16 0.12 0.08 0.04 0 0 -0.12 -0.1 -0.08 -0.06 -0.04 -0.02 0 0 °C 160 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 1 BSS 84 P 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 BSS 84 P A K/W -10 0 tp = 170.0 µs 10 2 /I D -10 -1 = RD o S( n) VD S 1 ms Z thJA 10 1 D = 0.50 10 ms ID 0.20 0.10 -10 -2 DC 10 0 0.05 single pulse 0.02 0.01 -10 -3 -1 -10 -10 0 -10 1 V -10 2 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Rev 2.4 Page 4 tp 2006-12-05 BSS 84 P 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 °C -0.4 BSS 84 P Ptot = 0.36W 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS ; Tj = 25 °C 26 BSS 84 P A l W k ji h VGS [V] ga -2.5 a b c d e f g 22 20 -0.32 f b c -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -8.0 -10.0 -0.28 R DS(on) e d e 18 16 14 12 10 8 6 4V GS [V] = h i j k l ID -0.24 -0.2 -0.16 -0.12 -0.08 -0.04 0 0 b c f dg h i j k l a 2 -4 a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 g h i j -5.5 -6.0 -6.5 -7.0 k l -8.0 -10.0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 V -5 0 0 -0.04 -0.08 -0.12 -0.16 -0.2 -0.24 -0.28 -0.32 A -0.38 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); |VDS |³ 2 x |ID | x RDS(on)max parameter: Tj = 25 °C 0.4 A 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 °C 0.16 S 0.3 0.12 - ID 0.25 g fs V 0.1 0.2 0.08 0.15 0.06 0.1 0.04 0.05 0.02 0 0 1 2 3 4 6 0 0 0.04 0.08 0.12 0.16 A 0.22 - VGS -ID Rev 2.4 Page 5 2006-12-05 BSS 84 P 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -0.17 A, VGS = -10 V 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS 2.4 V 98% W R DS(on) 21 BSS 84 P 18 2 - V GS(th) 16 14 12 10 8 6 4 2 0 -60 typ 1.8 1.6 1.4 typ. 98% 1.2 1 0.8 0.6 0.4 -60 2% -20 20 60 100 °C 180 -20 20 60 100 °C 160 TA TA 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz 10 2 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs -10 0 BSS 84 P A pF Ciss C -10 -1 Coss 10 1 IF -10 -2 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 V 20 -10 -3 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 - VDS VSD Page 6 Rev 2.4 2006-12-05 BSS 84 P 13 Typ. avalanche energy EAS = f (TA), parameter: 3 14 Typ. gate charge VGS = f (QGate ) parameter: ID = -0.17 A pulsed; Tj = 25 °C -16 BSS 84 P ID = -0.17 A , VDD = -25 V, RGS = 25 W V mJ -12 E AS 2 V GS -10 0,2 VDS max 0,8 VDS max 1.5 -8 -6 1 -4 0.5 -2 0 25 45 65 85 105 125 °C TA 165 0 0 0.2 0.4 0.6 0.8 1 1.2 nC 1.5 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (TA) BSS 84 P -72 V V (BR)DSS -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C TA 180 Rev 2.4 Page 7 2006-12-05 BSS 84 P Published by Infineon Technologies AG , Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.4 Page 8 2006-12-05