BSV236SP_06

BSV 236SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Super Logic Level (2.5 V rated) • 150°C operating temperature • Avalanche rated • dv/dt rated Product Summary VDS RDS(on) ID -20 175 -1.5 PG-SOT-363 4 V mΩ A 5 6 2 3 1 VPS05604 Type BSV 236SP Package PG-SOT-363 Tape and Reel inf Marking L6327:3000pcs/r. X2s Gate pin 3 Drain pin 1,2, 5,6 Source pin 4 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -1.5 -1.2 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -6 9.5 -6 ±12 0.56 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-1.5 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-1.5A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 1.3 Page 1 2006-12-04 BSV 236SP Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJS RthJA - Values typ. max. 90 220 110 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6 Values typ. -0.9 max. -1.2 Unit V Gate threshold voltage, VGS = VDS ID =-8µA Zero gate voltage drain current VDS =-20V, VGS =0, Tj =25°C VDS =-20V, VGS =0, Tj =150°C µA -0.1 -10 -10 193 131 -1 -100 -100 285 175 nA mΩ Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-0.8A Drain-source on-state resistance VGS =-4.5, ID =-1.5A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Rev 1.3 Page 2 2006-12-04 BSV 236SP Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss td(on) tr td(off) tf VDD =-10V, VGS =-4.5V, ID =-1A, RG=6Ω çVDS ç≥2*çIDç*RDS(on)max ID =-1.2A VGS =0, VDS =-15V, f=1MHz Symbol Conditions min. 2.2 - Values typ. 4.4 228 92 75 5.7 8.5 14.1 12.2 max. 8.5 12.7 21.1 18.3 Unit S pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0, |IF | = |ID | VR =-10V, |IF | = |lD |, diF /dt=100A/µs Qgs Qgd Qg VDD =-10V, ID =-1.5A - -0.4 -1.8 -3.8 -1.6 -0.6 -2.7 -5.7 - nC VDD =-10V, ID =-1.5A, VGS =0 to -4.5V V(plateau) VDD =-10V, ID =-1.5A V IS ISM TA=25°C - 0.88 16.4 3.4 -0.11 A -6 1.3 20.5 4.3 V ns nC Rev 1.3 Page 3 2006-12-04 BSV 236SP 1 Power dissipation Ptot = f (TA ) 1.3 BSV 236SP 2 Drain current ID = f (TA ) parameter: |VGS |≥ 4.5 V -1.6 BSV 236SP W A 1.1 1 0.9 -1.2 Ptot ID 20 40 60 80 100 120 0.8 0.7 -1 -0.8 0.6 0.5 0.4 0.3 0.2 0.1 0 0 -0.4 -0.6 -0.2 °C 160 0 0 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 1 BSV 236SP D 4 Transient thermal impedance ZthJS = f (tp ) parameter : D = tp /T 10 2 tp = 45.0 µs 100 µs BSV 236SP /I A R DS ( on ) = V DS K/W 10 1 1 ms -10 0 Z thJS 10 ms ID 10 0 D = 0.50 10 -10 -1 -1 0.20 0.10 0.05 single pulse 10 -2 DC 0.02 0.01 -10 -2 -1 -10 -10 0 -10 1 V -10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Rev 1.3 Page 4 tp 2006-12-04 BSV 236SP 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 12 Vgs = -3.4V A Vgs = -3V 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 0.5 Vgs = -2V Ω RDS(on) - ID 8 Vgs = -3.8V Vgs = -4.5V Vgs = -6V 6 Vgs = - 2.4V Vgs= - 2.6V Vgs = - 3V Vgs= - 3.4V Vgs = - 3.8V Vgs = - 4.5V Vgs= - 5V Vgs = - 6V 0.3 Vgs = -2.6V 0.2 4 Vgs = -2.4V Vgs = -2V 0.1 2 Vgs = -1.8V 0 0 1 2 3 4 5 6 7 8 V 10 0 0 2 4 6 8 - V DS 11 A - ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max parameter: tp = 80 µs 5 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: tp = 80 µs 8 A 4 S 6 3.5 - ID g fs 0.25 0.5 0.75 1 1.25 1.5 1.75 2 3 2.5 2 1.5 5 4 3 2 1 0.5 0 0 1 V 2.5 - V GS 0 0 0.5 1 1.5 2 2.5 3 3.5 4 A5 - ID Rev 1.3 Page 5 2006-12-04 BSV 236SP 9 Drain-source on-resistance RDS(on) = f(Tj ) parameter: ID = -1.5 A, VGS = -4.5 V 240 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = -8 µA 1.4 mΩ V - VGS(th) RDS(on) 200 98% 1 180 98% 160 0.8 typ. 140 typ. 0.6 2% 120 0.4 100 80 -60 -20 20 60 100 °C 160 Tj 0.2 -60 -20 20 60 100 °C 160 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz 10 3 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs -10 1 BSV 236SP A pF Ciss -10 0 C Coss 10 2 Crss IF -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 -10 -2 0 5 10 V 20 0.4 0.8 1.2 1.6 2 2.4 V 3 - VDS VSD Page 6 Rev 1.3 2006-12-04 BSV 236SP 13 Typ. avalanche energy EAS = f (Tj ), par.: ID = -1.5 A VDD = -10 V, RGS = 25 Ω 10 14 Typ. gate charge |VGS| = f (QGate ) parameter: ID = -1.5 A pulsed 12 mJ 8 V 10 9 - VGS E AS 7 6 5 4 3 2 8 7 0.2 VDS max. 6 0.8 VDS max. 5 4 3 2 0.5 VDS max. 1 0 25 1 50 75 100 °C Tj 150 0 0 1 2 3 4 5 6 8 nC |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSV 236SP V -23.5 V (BR)DSS -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Rev 1.3 Page 7 2006-12-04 BSV 236SP Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.3 Page 8 2006-12-04