BSZ0909NS

n -C hannel Pow er MO S FET OptiMOS™ BSZ0909NS D at a S heet 3.1, 2010-11-01 Final I ndus t ri al & M ul t i m ark et OptiMOS™ Power-MOSFET BSZ0909NS 1 Description OptiMOS™30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30V the best choice forthe demanding requirements of voltage regulator solutions in Servers, Datacom and Telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. OptiMOS™ products are available in high performancepackages to tackle your most challenging applications giving full flexibility in optimizing space- efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications S1 S2 8D 7D 6D 5D Features • • • • • • • • Optimized for high performance Buck converter 100% avalanche tested Very low on-resistance RDS(on) @ VGS=4.5 V Ultra low gate (Qg) and output charge (Qoss) for given RDS(on) Qualified according to JEDEC1) for target applications Superior thermal resistance Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 S3 G4 Applications • • • • On board power for server Power managment for high performance computing Synchronous rectification High power density point of load converters Table 1 Parameter Key Performance Parameters Value 34 12 36 8.9 6.1 Unit V m# A nC Related Links IFX OptiMOS webpage IFX OptiMOS product brief IFX OptiMOS spice models IFX Design tools VDS RDS(on),max ID QOSS Qg.typ Type BSZ0909NS Package PG-TSDSON-8 Marking 0909NS 1) J-STD20 and JESD22 Final Data Sheet 1 3.1, 2010-11-01 OptiMOS™ Power-MOSFET BSZ0909NS 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Parameter Continuous drain current Maximum ratings Symbol Min. ID Values Typ. Max. 36 23 32 21 9 Pulsed drain current2) Avalanche current, single pulse Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 3) Unit A Note / Test Condition VGS=10 V, TC=25 °C VGS=10 V, TC=100 °C VGS=4.5 V, TC=25 °C VGS=4.5 V, TC=100 °C VGS=4.5 V, TA=25 °C, RthJA=60 K/W1)) TC=25 °C ID,pulse IAS EAS VGS Ptot Tj,Tstg -20 -55 55 150 144 20 9 20 25 2.1 150 56 °C Ncm mJ V W ID=20 A,RGS=25 # TC=25 °C TA=25 °C, RthJA=60 K/W1)) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information 3 Table 3 Parameter Thermal characteristics Thermal characteristics Symbol Min. 2 Values Typ. Max. 5.1 60 Unit °K/W Note / Test Condition Thermal resistance, junction - case RthJC Device on PCB RthJA 6 cm2 cooling area1) 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air Final Data Sheet 2 3.1, 2010-11-01 OptiMOS™ Power-MOSFET BSZ0909NS Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Parameter Static characteristics Symbol Min. Drain-source breakdown voltage V(BR)DSS Gate threshold voltage Zero gate voltage drain current 34 1 Gate-source leakage current 0.1 10 10 12 10 3 47 Values Typ. Max. 2 1 100 100 15 12 # S |VDS|>2|ID|RDS(on)max, ID=30 A nA m# µA V Unit Note / Test Condition VGS=0 V, ID=1.0 mA VDS=VGS, ID=250 µA VDS=34 V, VGS=0 V, Tj=25 °C VDS=34 V, VGS=0 V, Tj=125 °C VGS=16 V, VDS=0 V VGS=4.5 V, ID=12 A VGS=10 V, ID=20 A VGS(th) IDSS IGSS 24 Drain-source on-state resistance RDS(on) Gate resistance Transconductance RG gfs Table 5 Parameter Dynamic characteristics Symbol Min. Values Typ. 975 340 21 4.5 2.2 16 2 Max. 1310 450 ns pF Unit Note / Test Condition Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss VGS=0 V, VDS=15 V, f=1 MHz VDD=15 V, VGS=10 V, ID=30 A, RG= 1.6 # td(on) tr td(off) tf Final Data Sheet 3 3.1, 2010-11-01 OptiMOS™ Power-MOSFET BSZ0909NS Electrical characteristics Table 6 Parameter Gate charge characteristics1) Symbol Min. Values Typ. 3.3 1.5 1.6 3.2 6.1 3.4 13 Max. 8.1 17 V nC nC Unit Note / Test Condition Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Qgs Qg(th) Qgd Qsw VDD=15 V, ID=30 A, VGS=0 to 4.5 V Qg Vplateau Qg VDD=15 V, ID=30 A, VGS=0 to 10V VDS=0.1 V, VGS=0 to 4.5 V VDD=15 V, VGS=0 V Gate charge total, sync. FET Output charge Qg(sync) Qoss 5.3 8.9 1) See figure 16 for gate charge parameter definition Table 7 Parameter Reverse diode characteristics Symbol Min. Is IS,pulse Values Typ. Max. 23 148 0.9 10 V nC A Unit Note / Test Condition Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery charge TC=25 °C VGS=0 V, IF=20 A, Tj=25 °C VR=15 V, IF=Is, diF/dt=400 A/µs VSD Qrr Final Data Sheet 4 3.1, 2010-11-01 OptiMOS™ Power-MOSFET BSZ0909NS Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 8 1 Power dissipation 2 Drain current Ptot = f(TC) Table 9 3 Safe operating area TC=25 °C ID=f(TC); parameter:VGS 4 Max. transient thermal impedance ID=f(VDS); Tj=25 °C; D=0; parameter: Tp Z(thJC)=f(tp); parameter: D=tp/T Final Data Sheet 5 3.1, 2010-11-01 OptiMOS™ Power-MOSFET BSZ0909NS Electrical characteristics diagrams Table 10 5 Typ. output characteristics TC=25 °C 6 Typ. drain-source on-state resistance ID=f(VDS); Tj=25 °C; parameter: VGS Table 11 7 Typ. transfer characteristics RDS(on)=f(ID); Tj=25 °C; parameter: VGS 8 Typ. forward transconductance ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C Final Data Sheet 6 3.1, 2010-11-01 OptiMOS™ Power-MOSFET BSZ0909NS Electrical characteristics diagrams Table 12 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on)=f(Tj); ID=20 A; VGS=10 V Table 13 11 Typ. capacitances VGS(th)=f(Tj); VGS=VDS; ID=250 µA 12 Forward characteristics of reverse diode C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD); parameter: Tj Final Data Sheet 7 3.1, 2010-11-01 OptiMOS™ Power-MOSFET BSZ0909NS Electrical characteristics diagrams Table 14 13 Avalanche characteristics 14 Typ. gate charge IAS=f(tAV); RGS=25   parameter: Tj(start) Table 15 15 Drain-source breakdown voltage VGS=f(Qgate); ID=30 A pulsed; parameter: VDD 16 Gate charge waveforms VBR(DSS)=f(Tj); ID=1 mA Final Data Sheet 8 3.1, 2010-11-01 OptiMOS™ Power-MOSFET BSZ0909NS Package outlines 6 Package outlines Figure 1 Outlines PG-TSDSON-8, dimensions in mm/inches Final Data Sheet 9 3.1, 2010-11-01 OptiMOS™ Power-MOSFET BSZ0909NS Revision History 7 Revision History Revision History: 2010-11-01, 3.1 Previous Revision: Revision 0.9 2.0 Subjects (major changes since last revision) Release of target data sheet Release Final version We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Edition 2010-11-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 10 3.1, 2010-11-01