BSZ16DN25NS3G_11

Type BSZ16DN25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 PG-TSDSON-8 VDS RDS(on),max ID 250 165 10.9 V mW A Type BSZ16DN25NS3 G Package PG-TSDSON-8 Marking 16DN25N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 10.9 7.7 44 120 10 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=5.5 A, R GS=25 W mJ kV/µs V W °C T C=25 °C 62.5 -55 ... 150 55/150/56 J-STD20 and JESD22 see figure 3 Rev. 2.2 page 1 2011-07-14 BSZ16DN25NS3 G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area3) 2 60 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=32 µA V DS=200 V, V GS=0 V, T j=25 °C V DS=200 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=5.5 A V GS=20 V, V DS=0 V V GS=10 V, I D=5.5 A 250 2 3 0.1 4 1 µA V 7 10 1 146 2.1 14 100 100 165 nA mW W S 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2011-07-14 BSZ16DN25NS3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) Values typ. max. Unit C iss C oss C rss t d(on) tr t d(off) tf V DD=100 V, V GS=10 V, I D=5.5 A, R G=1.6 W V GS=0 V, V DS=100 V, f =1 MHz - 690 44 5.2 6 4 11 4 920 59 - pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=100 V, V GS=0 V V DD=99 V, I D=5.5 A, V GS=0 to 10 V - 3.0 1.2 2.1 8.6 4.3 16 11.4 22 nC V nC IS I S,pulse V SD t rr Q rr T C=25 °C V GS=0 V, I F=10.9 A, T j=25 °C V R=100 V, I F=I S, di F/dt =100 A/µs - 0.9 103 337 10.9 44 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2011-07-14 BSZ16DN25NS3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V 70 12 60 10 50 8 40 Ptot [W] ID [A] 30 20 10 0 0 40 80 120 160 6 4 2 0 0 40 80 120 160 TC [°C] TC [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 1 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 10 µs 101 ZthJC [K/W] 100 µs ID [A] 0.5 1 ms 100 0.2 100 10 ms 0.1 0.05 0.02 0.01 DC 10-1 10-1 100 101 102 103 10-1 10-5 single pulse 10-4 10-3 10-2 10-1 100 VDS [V] tp [s] Rev. 2.2 page 4 2011-07-14 BSZ16DN25NS3 G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 25 6V 7V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 240 200 20 10 V 5V 5.5 V 5V 5.5 V 6V 160 RDS(on) [mW ] 15 10 V 8V ID [A] 120 10 80 4.5 V 5 40 0 0 1 2 3 4 5 0 0 4 8 12 16 VDS [V] ID [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 25 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 24 20 20 16 15 gfs [S] 10 150 °C ID [A] 12 8 5 4 25 °C 0 0 2 4 6 8 0 0 4 8 12 16 VGS [V] ID [A] Rev. 2.2 page 5 2011-07-14 BSZ16DN25NS3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=5.5 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 450 400 350 3 300 32 µA 4 3.5 320 µA RDS(on) [mW ] 2.5 VGS(th) [V] typ 250 200 150 100 50 0 -60 -20 20 60 100 140 180 98 % 2 1.5 1 0.5 0 -60 -20 20 60 100 140 180 Tj [°C] Tj [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 Ciss 100 Coss 25 °C 102 10 150 °C, 98% C [pF] IF [A] 150 °C 25 °C, 98% 101 Crss 1 100 0 40 80 120 160 200 0.1 0 0.5 1 1.5 2 VDS [V] VSD [V] Rev. 2.2 page 6 2011-07-14 BSZ16DN25NS3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 W parameter: T j(start) 10 14 Typ. gate charge V GS=f(Q gate); I D=5.5 A pulsed parameter: V DD 10 25 °C 8 200 V 100 °C 125 V 6 125 °C 1 VGS [V] IAS [A] 50 V 4 2 0.1 1 10 100 1000 0 0 1 2 3 4 5 6 7 8 9 10 tAV [µs] Qgate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 280 V GS Qg 270 VBR(DSS) [V] 260 250 V gs(th) 240 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q gate 230 Tj [°C] Rev. 2.2 page 7 2011-07-14 BSZ16DN25NS3 G Package Outline:PG-TSDSON-8 Rev. 2.2 page 8 2011-07-14 BSZ16DN25NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain Rev. 2.2 page 9 2011-07-14