BSZ520N15NS3G

Je]R BSZ520N15NS3 G "%&$!"# 3 Power-Transistor Features Q ) AD :J65 7 B 54 54 4@ ? F6B :@ ? :> @ C Q ( 492 ? ? 6=? @ B 2 =6F6=  >= Q  H 6= ? D82 D 492 B 6 HR 9I"\[# AB 5E D ) '  4= 6 6 8 @4 Q & @ G @ ? B CC2 ? 46 R 9I"\[# 6:D TM Product Summary V 9I R 9I"\[#$ZNd I9 )-( -* *) K Z" 6 F=%JI9IED%0 Q   T @ A6B D 8 D > A6B D B 2 :? 6 2 E6 Q * 3 766 =2 5 A=D 8 , @ " - 4@ > A= ? D B6 2 :? :2 Q + E =:65 2 44@ B :? 8 D $     2 :7 5 @ )# 7 B D B 6D2 AA= 2 D ? @ 28 :4 :@ Q " 2 =86? 766 2 44@ B :? 8 D #        @ B 5 @ Type  - 1   (  ( -  ! Package F=%JI9IED%0 Marking -*(D)-D Maximum ratings, 2 DT W   T  E =C @ D 6B :C C 64:765 ?6C 9 G 6 A : Parameter  @ ? D E E 5B :? 4E B ? D :? @ C 2 B6 Symbol Conditions I9 T 8   T T 8   T * EC 5 5B :? 4E B ? D =6 2 B 6 *#  F2 =? 496 6? 6B I C? 8= AEC 2 8 : 6 =6 !2 D C E 46 F@ = 86 6@B D 2 * @ G6B 5:C :A2 D ? C :@ ) A6B D 8 2 ? 5 C@ B 86 D > A6B D B 2 :? D2 6 2 E6 #  4= 2 D 42 D 8@ B   #( #    :> :4 6I )# *# Value *) ), 0, .( q*( Unit 6 I 9$]aY_R E 6I V =I P `\` T W T _`T T 8   T I 9    R =I   " Z@ K L T T 8   T -/            $ - .   2 ? 5 $  -    C 6 78E 6  6:B , 6F   A2 86       BSZ520N15NS3 G Parameter Symbol Conditions min. Thermal characteristics . 96B 2 = 6CC2 ? 46 ; ? 4D ? 42 C > B :D E :@ 6 . 96B 2 = 6CC2 ? 46 > B :D WE 4D ? 2 > 3 :6? D ? :@ R `U@8 R `U@6  4> * 4@ @ = 8 2 B 2 +# :? 6 % % % % *&* .( A'L Values typ. max. Unit Electrical characteristics, 2 DT W   T  E =C @ D 6B :C C 64:765 ?6C 9 G 6 A : Static characteristics  B :? C E 46 3 B 2 H   > > H  > > 6A@ H *   I 4@ ? ? 64D ? *   :CF6B :42 =? C:=2 :B :@ D : D= ,  G:D  4>*  @ ? 6 =I6B   V > D :4 , :C D 6 6 :> . E ? @ 7 56=I D 6 B 7 2 :> 2 =D 6 =:> !2 D  92 B 6  92 B 4D BC:4C 6 T 2 6 : D ,# !2 D D C E 46 492 B 6 6@ @ B 8 !2 D D 5B :? 492 B 6 6@ 2 8 - G:D 9:? 8 492 B 6 4 8 !2 D 492 B 6 D D = 6 8 @2 !2 D A=D 2 E F@ = 86 6 26 D 2 ) E AE 492 B 6 DD 8 Reverse Diode  :@ 56 4@ ? D @ E 7 B 2 B 4E B ? D :? C @ G 5 B 6  :@ 56 AEC 4E B ? D =6 B 6  :@ 56 7 B 2 B F@ = 86 @G 5 D 2 , 6F6B 6 B 4@ F6B D 6 C6 I :> , 6F6B 6 B 4@ F6B 492 B 6 C6 I 8 ,# Values typ. max. Unit C V__ C \__ C ^__ t Q"\[# t^ t Q"\SS# tS V 99   /  V =I  /  I 9    R =  " V =I  /  V 9I   /  f ' " J % % % % % % % ./( 0( +&, / )( + 01( % % % % % % ]< [_ Q T_ Q TQ Q _c QT V ]YN`RNa Q \__ V 99   /  V =I  / V 99   /  I 9    V =I  D  / @ % % % % % % +&)&+ 0&/ -&* ** % % % )* % *1 [8 K [8 II I I$]aY_R V I9 t ^^ Q ^^ % T 8   T % V =I  /  I C Z thJC [K/W] I D [A] (&- 100 98 (&* 100 (&) (&(- (&(* (&() C? 8= AEC : 6 =6 10-1 10 -1 10-1 10 0 10 1 10 2 10 3 V DS [V] t p [s] , 6F   A2 86        BSZ520N15NS3 G 5 Typ. output characteristics I 94S"V 9I  T W   T A2 B > 6D B V =I 2 6 50 6 Typ. drain-source on resistance R 9I"\[#4S"I 9  T W   T A2 B > 6D B V =I 2 6 80 / 70  / /   / 40 60 / R DS(on) [m ] 30 50 /  / I D [A] 40 / 20 30   / 20 10 / 10 0 0 1   / 0 2 3 0 10 20 30 40 V DS [V] I D [A] 7 Typ. transfer characteristics I 94S"V =I  K 9Ig5*gI 9gR 9I"\[#ZNd V A2 B > 6D B T W 2 6 50 8 Typ. forward transconductance g S_4S"I 9  T W   T 40 35 40 30 30 25 g fs [S] 20 10   T   T I D [A] 20 15 10 5 0 0 2 4 6 8 0 0 10 20 30 40 50 60 V GS [V] I D [A] , 6F   A2 86        BSZ520N15NS3 G 9 Drain-source on-state resistance R 9I"\[#4S"T W  I 9    V =I  / 10 Typ. gate threshold voltage V =I"`U#4S"T W  V =I4V 9I A2 B > 6D B I 9 2 6 140 4 120 3.5  V 100 3  V  R DS(on) [m ] 2.5 V GS(th) [V] `e] 80 2 60   1.5 40 1 20 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C 4S"V 9I  V =I  /  f  ' " J 12 Forward characteristics of reverse diode I