Data Sheet, Rev. 1.0, May 2010
BTM7745G
High Current H-Bridge Trilith IC 3G
Automotive Power
High Current H-Bridge BTM7745G
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 2 3 4 4.1 4.2 5 5.1 5.2 5.3 6 6.1 6.2 6.2.1 6.2.2 6.2.3 6.3 6.3.1 6.3.2 6.3.3 6.3.4 6.3.5 6.3.6 6.4 6.4.1 6.4.2 6.4.3 6.4.4 6.4.5 7 7.1 8 9 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 7 8
Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Status Flag Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Application and Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Data Sheet
2
Rev. 1.0, 2010-05-28
High Current H-Bridge Trilith IC 3G
BTM7745G
1
Features • • • • • • • • • • • • • •
Overview
Integrated high current H-Bridge Path resistance of max. 500 mΩ @ 150 °C (typ. 250 mΩ @ 25 °C) Low quiescent current of typ. 5µA @ 25 °C Current limitation level of 12 A typ. (6 A min.) Driver circuit with logic inputs Status flag diagnosis Overtemperature shut down with latch behaviour Overvoltage lock out PG-DSO-36-29 Undervoltage shut down Switch-mode current limitation for reduced power dissipation in overcurrent situation Integrated dead time generation Operation up to 28V Green Product (RoHS compliant) AEC Qualified
Description The BTM7745G is a fully integrated high current H-bridge for motor drive applications. It contains two p-channel highside MOSFETs and two n-channel lowside MOSFETs with an integrated driver IC in one package. Due to the p-channel highside switches the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis,dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTM7745G provides an optimized solution for protected high current motor drives with very low board space consumption.
Type BTM7745G Data Sheet
Package PG-DSO-36-29 3
Marking BTM7745G Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Block Diagram
2
VS
Block Diagram
VS Overtemp. detection HS1 Overcurr. Detection HS1 Gate Driver HS OUT1
HS off LS off
HS2 Undervolt. detection Overvolt. detection Overcurr. Detection HS2 Gate Driver HS Digital Logic
LS off HS off
OUT2
Gate Driver LS Overcurr. Detection LS1 LS1
Gate Driver LS Overcurr. Detection LS2 LS2
GND
GND
IN1
IN2
INH
ST
Figure 1
Block Diagram
3
Terms
following figure shows the terms used in this data sheet.
VS IIN1 VIN1 VIN2
IN1 VS
IS , -ID(HS)
VDS(HS)
VDS(HS)
I IN2
IN2
IOUT , ID, IL
OUT1
IINH
INH
VSD(LS) IOUT , I D, IL
OUT2
VOUT
VINH
IST VST
ST GND
VSD(LS)
VOUT
IGND , I D(LS)
Figure 2
Terms
Data Sheet
4
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Pin Configuration
4
4.1
Pin Configuration
Pin Assignment
OUT1 OUT1 OUT1 OUT1 GND GND GND GND IN1 IN2 VS VS VS VS OUT2 OUT2 OUT2 OUT2
Figure 3
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19
OUT1 OUT1 OUT1 OUT1 VS VS VS VS ST INH GND GND GND GND OUT2 OUT2 OUT2 OUT2
Pin Configuration BTM7745G
4.2
Pin 1..4, 33..36 5..8, 23..26 9 10
Pin Definitions and Functions
Symbol OUT1 GND IN1 IN2 VS OUT2 INH ST Function Output of first half bridge Ground Input of first half bridge Input of second half bridge Supply, all pins to be connected and shorted externally Output of second half bridge Inhibit pin, to set device in sleep/stand-by mode Status signal, open drain output
Pins written in bold type need power wiring.
11..14, 29..32 15..22 27 28
Data Sheet
5
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
General Product Characteristics
5
5.1
General Product Characteristics
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = -40 °C to +150 °C; all voltages with respect to ground (unless otherwise specified)
Pos. 5.1.1 5.1.2 5.1.3 5.1.4 5.1.5 5.1.6 5.1.7 5.1.8 5.1.9 Parameter Supply voltage Logic Input Voltage HS/LS continuous drain current Voltage at ST pin ST pin continuous current ST pin peak current Junction temperature Storage temperature ESD susceptibility IN1, IN2, ST, INH OUT1, OUT2, GND, VS
1) Not subject to production test, specified by design. 2) HBM according to EIA/JESD 22-A 114B (1.5 kΩ, 100pF)
Symbol
Limit Values Min. Max. 45 5.5 3.2 45 2 4 150 150 -0.3 -0.3 -3.2 -0.3 0 0 -40 -55
Unit V V A V mA mA °C °C kV
Conditions – –
TC < 85°C switch active
VS VIN1,VIN2, VINH ID(HS) ID(LS) VST IST IST Tj Tstg VESD
– –
tpeak < 10µs
– –
HBM2)
Thermal Maximum Ratings
ESD Susceptibility
-2 -4
2 4
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation.
Data Sheet
6
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
General Product Characteristics Maximum Single Pulse Current
20
15
Imax [A]
10
5
0 0,0001 0,001 0,01 0,1 1 10 100
tpulse [s]
Figure 4 BTM7745G Maximum Single Pulse Current (TC = Tj(0) < 85°C)
This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited due to thermal protection of the device.
5.2
Pos. 5.2.1 5.2.2
Functional Range
Parameter Supply Voltage Range for Normal Operation Extended Supply Voltage Range for Operation Symbol Min. Limit Values Max. 18 28 V V VS pins shorted VS pins shorted; Parameter deviations possible;
1)
Unit
Conditions
VS(nor) VS(ext)
8 5.5
5.2.3
Junction Temperature
Tj
-40
150
°C
–
1) Overtemperature protection available up to supply voltage VS = 18V.
Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table.
Data Sheet
7
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
General Product Characteristics
5.3
Thermal Resistance
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Pos. 5.3.1 Parameter Thermal Resistance Junction to Soldering Point, Low Side Switch RthjSP(LS) = ΔTj(LS)/ Pv(LS) Thermal Resistance Junction to Soldering Point, High Side Switch RthjSP(HS) = ΔTj(HS)/ Pv(HS) Thermal Resistance Junction to Soldering Point, both switches RthjSP= max[ΔTj(HS), ΔTj(LS)] / (Pv(HS) + Pv(LS)) Thermal Resistance Junction-Ambient Symbol Min. Limit Values Typ. – Max. 29 K/W
1)
Unit
Conditions
RthjSP(LS) –
5.3.2
RthjSP(HS) –
–
29
K/W
1)
5.3.3
RthjSP
–
–
29
K/W
1)
5.3.4
Rthja
–
46
–
K/W
1) 2)
;
1) Not subject to production test, specified by design. 2) Specified Rthja value is according to Jedec JESD51-2, -7 at natural convection on FR4 2s2p board; The product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Transient thermal impedance Zthja Figure 5 is showing the typical transient thermal impedance of high side or low side switch of BTM7745G mounted according to JEDEC JESD51-7 at natural convection on FR4 2s2p board. The device (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu). For the simulation each chip was separately powered with 1W at an ambient temperature Ta of 85°C.
50 45 40 35
Zth-ja [K/W]
30 25 20 15 10 5 0 0,001 High side sw itch / Low side sw itch
0,01
0,1
1
10
100
1000
tpulse [s]
Figure 5 Typical transient thermal impedance of BTM7745G on JESD51-7 2s2p board (1W each chip (separately heated), Ta = 85°C, single pulse) 8 Rev. 1.0, 2010-05-28
Data Sheet
High Current H-Bridge BTM7745G
Block Description and Characteristics
6
6.1
Block Description and Characteristics
Supply Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0A, VS pins shorted, all voltages with respect to ground, positive
current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. General 6.1.1 Supply Current Typ. 5 Max. 9.5 mA
VINH or VIN1 or VIN2 = 5 V DC-mode normal operation (no fault condition) VINH = VIN1 = VIN2 = 0 V Tj < 85 °C; 1) VINH = VIN1 = VIN2 = 0 V
Unit
Test Conditions
IS(on)
–
6.1.2
Quiescent Current
IS(off)
– –
5 –
15 30
µA µA
1) Not subject to production test, specified by design.
10
I S ( o f f ) [µA]
9 8 7 6 5 4 3 2 1 0 -40 0 40 80 120 160
T [°C]
Figure 6
Typical Quiescent Current vs. Junction Temperature (typ. @ VS = 13.5V)
Data Sheet
9
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Block Description and Characteristics
6.2
Power Stages
The power stages of the BTM7745G consist of p-channel vertical DMOS transistors for the high side switches and n-channel vertical DMOS transistors for the low side switches. All protection and diagnostic functions are located in a separate control chip. Both switches, high side and low side, allow active freewheeling and thus minimize power dissipation in the forward operation of the integrated diodes. The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The typical on state resistance characteristics are shown in Figure 7.
High Side Switch
250
Low Side Switch
400
RON (HS) [m Ω]
RON(L S) [ mΩ]
350 300
200
Tj = 150°C
250 200
150
T j = 150°C Tj = 25°C Tj = -40°C
100
150 100 50
Tj = 25°C Tj = -40°C
50
0 4 8 12 16 20 24 28
0 4 8 12 16 20 24 28
VS [ V]
Figure 7 Typical On State Resistance vs. Supply Voltage
VS [ V]
Data Sheet
10
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Block Description and Characteristics
6.2.1
Power Stages - Static Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified) Pos. Parameter Symbol High Side Switch - Static Characteristics 6.2.1 On state high side resistance RON(HS) – – 6.2.2 Leakage current high side
IL(LKHS)
Limit Values Min. Typ. Max.
Unit
Test Conditions
mΩ 100 140 – 190 µA – – – – 0.9 0.8 0.6 1 5 V – – – – – 0.8 mΩ – – 150 250 – 300 µA – – – – 0.9 0.8 0.6 1 3 V – – – – – 0.8
IOUT = 1 A VS = 13.5 V Tj = 25 °C; 1) Tj = 150 °C VINH = VIN1 = VIN2 = 0 V VOUT = 0 V Tj < 85 °C; 1) Tj = 150 °C IOUT = -1 A Tj = -40 °C; 1) Tj = 25 °C; 1) Tj = 150 °C IOUT = -1 A VS = 13.5 V Tj = 25 °C; 1) Tj = 150 °C VINH = VIN1 = VIN2 = 0 V VOUT = VS Tj < 85 °C; 1) Tj = 150 °C IOUT = 1 A Tj = -40 °C; 1) Tj = 25 °C; 1) Tj = 150 °C
6.2.3
Reverse diode forward-voltage high side 2)
VDS(HS)
Low Side Switch - Static Characteristics 6.2.4 On state low side resistance RON(LS)
6.2.5
Leakage current low side
-IL(LKLS)
6.2.6
Reverse diode forward-voltage low side 2)
VSD(LS)
1) Not subject to production test, specified by design. 2) Due to active freewheeling diode is conducting only until related switch is on.
Data Sheet
11
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Block Description and Characteristics
6.2.2
Switching Times
IN tdr(HS ) V OUT
90% 90%
t r(HS )
t df (HS ) tf (HS )
t
ΔVOUT
40%
ΔVOUT
40%
t
Figure 8
Definition of switching times high side (Rload to GND)
IN tdf (LS ) V OUT tf (LS ) t dr(LS ) tr(LS ) t
60%
60%
ΔVOUT
10%
ΔVOUT
10%
t
Figure 9 Definition of switching times low side (Rload to VS)
Due to the timing differences for the rising and the falling edge there will be a slight difference between the length of the input pulse and the length of the output pulse. It can be calculated using the following formulas: • •
ΔtHS = (tdr(HS) + 0.2 tr(HS)) - (tdf(HS) + 0.8 tf(HS)) ΔtLS = (tdf(LS) + 0.2 tf(LS)) - (tdr(LS) + 0.8 tr(LS)).
Data Sheet
12
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Block Description and Characteristics
6.2.3
Power Stages - Dynamic Characteristics
VS = 13.5V, Tj = +150 °C,RLoad = 12 Ω, VINH = 5V, VS pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Min. High Side Switch Dynamic Characteristics 6.2.7 6.2.8 6.2.9 6.2.10 6.2.11 6.2.12 6.2.13 6.2.14 6.2.15 6.2.16 6.2.17 6.2.18 Rise-time of HS Slew rate HS on Switch on delay time HS Fall-time of HS Slew rate HS off Switch off delay time HS Rise-time of LS Slew rate LS switch off Switch off delay time LS Fall-time of LS Slew rate LS switch on Switch on delay time LS Typ. 15 0.4 95 15 0.4 55 20 0.4 60 20 0.4 80 Max. 25 – 140 25 – 80 30 – 90 30 – 120 µs V/µs µs µs V/µs µs µs V/µs µs µs V/µs µs – – – – – – – – – – – – Unit Test Conditions
tr(HS)
ΔVOUT/
5 – 50 5 – 25 10 – 30 10 – 40
tr( HS) tdr(HS) tf(HS)
-ΔVOUT/
tf(HS) tdf(HS) tr(LS)
ΔVOUT/
Low Side Switch Dynamic Characteristics
tr(LS) tdr(LS) tf(LS)
-ΔVOUT/
tf(LS) tdf(LS)
6.3
Protection Functions
The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation (Chapter 6.3.4). Overvoltage, overtemperature and overcurrent are indicated by switching the open drain output ST to low. Although the slew rate is defined as above (Chapter 6.2.3), in case of overvoltage and overcurrent the device will have a higher slew rate of typically 11V/µs. In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other error modes.
6.3.1
Overvoltage Lock Out
To assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts both lowside MOSFETs off and turns both highside MOSFET on, if the supply voltage VS is exceeding the over voltage protection level VOV(OFF). The IC operates in normal mode again with a hysteresis VOV(HY) if the supply voltage decreases below the switch-on voltage VOV(ON). This behavior of the BTM7745G will lead to freewheeling in highside during over voltage.
Data Sheet
13
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Block Description and Characteristics
6.3.2
Undervoltage Shut Down
To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (both outputs are tri-state), if the supply voltage VS drops below the switch-off voltage VUV(OFF). In this case all latches will be reset. The IC becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON).
6.3.3
Overtemperature Protection
The BTM7745G is protected against overtemperature by integrated temperature sensors. Each half bridge, which consists of one high side and one low side switch, is protected by one temperature sensor located in the high side switch. Both temperature sensors function independently. A detection of overtemperature through temperature sensor leads to a shut down of both switches in the half bridge. This state is latched until the device is reset by a low signal with a minimum length of treset simultaneously at the INH pin and both IN pins, provided that its temperature has decreased at least the thermal hysteresis ΔT in the meantime. Overtemperature protection is available up to supply voltage VS = 18V. For sufficient over temperature protection please consider also operation below the limitations outlined in Figure 4 and Figure 5. Repetitive use of the overtemperature protection might reduce lifetime.
6.3.4
Current Limitation
The current in the bridge is measured in all four switches. As soon as the current in forward direction in one switch is reaching the limit ICLx, this switch is deactivated for tCLS. In case of INH = 5V (high) the other switch of the same half bridge is activated for the same time (tCLS). During that time all changes at the related IN pin are ignored. However, the INH pin can still be used to switch all MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the ST pin is reset after 1.5 * tCLS if no overcurrent state is detected in the meantime. Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the effective current limitation level ICLx depends on the slew rate of the load current di/dt as shown in Figure 11.
IL IC Lx I C Lx 0
t C LS
1. 5 *tC LS
O
t
VST 5V
O
t
Figure 10
Timing Diagram Current Limitation and Status Flag
Data Sheet
14
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Block Description and Characteristics
High Side Switch
14
Low Side Switch
14
I C L H [A]
I C L L [A]
13
Tj = - 40°C
ICLH0
13
Tj = - 40°C
Tj = 25°C Tj = 150°C
ICLL0
Tj = 25°C Tj = 150°C
12
12
11
11
10 0 50 100 150
10 0 50 100 150
dIL/dt [A/ms]
Figure 11 Current Limitation Level vs. Current Slew Rate dIL/dt
dIL/dt [A/ms]
High Side Switch
16 15
Low Side Switch
16 15
IC LH [A]
13 12 11 10 9 8 6 10 14 18
Tj = - 40°C Tj = 25°C
ICLL [A]
14
14 13 12
Tj = 25°C Tj = - 40°C Tj = 150°C
Tj = 150°C
11 10 9 8 6 10 14 18 22
22
26
VS [V]
Figure 12
26
VS [V]
Typical Current Limitation Detection Levels vs. Supply Voltage
In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation. This method of limiting the current has the advantage that the power dissipation in the BTM7745G is much smaller than by driving the MOSFETs in linear mode. Therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device.
Data Sheet
15
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Block Description and Characteristics
6.3.5
• • •
Short Circuit Protection
The device provides embedded protection functions against output short circuit to ground output short circuit to supply voltage short circuit of load
The short circuit protection is realized by the previously described current limitation in combination with the overtemperature shut down (see Chapter 6.3.3) of the device.
6.3.6
Electrical Characteristics - Protection Functions
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified) Pos. Parameter Symbol Over Voltage Lock Out 6.3.1 6.3.2 6.3.3 6.3.4 6.3.5 6.3.6 6.3.7 6.3.8 6.3.9 6.3.10 Switch-ON voltage Switch-OFF voltage ON/OFF hysteresis Switch-ON voltage Switch-OFF voltage ON/OFF hysteresis Thermal shut down junction temperature Thermal switch on junction temperature Thermal hysteresis
VOV(ON) VOV(OFF) VOV(HY) VUV(ON) VUV(OFF) VUV(HY) TjSD TjSO
Limit Values Min. 27.8 28 – – 4.0 – 155 153 – 8 Typ. – – 0.2 – – 0.2 175 – 7 – Max. – 30 – 5.5 5.4 – 200 190 – –
Unit
Test Conditions
V V V V V V °C °C °C µs
Vs decreasing Vs increasing
1)
Under Voltage Shut Down
VS increasing VS decreasing
1)
Thermal Shut Down
1)
;
VS ≤ 18 V
1)
ΔT
1) 1)
Reset pulse at INH and IN pin treset (INH, IN1 and IN2 low) Current limitation detection level high side Current limitation detection level low side Shut off time for HS and LS
ICLH0 ICLL0 tCLS
Current Limitation 6.3.11 6.3.12 6.3.13 6 6 50 12 12 100 16 16 200 A A µs
VS = 13.5 V VS = 13.5 V VS = 13.5 V, Tj = 25 °C
1) Not subject to production test, specified by design.
Data Sheet
16
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Block Description and Characteristics
6.4 6.4.1
Control and Diagnostics Input Circuit
The control inputs INx and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. To set the device in stand-by mode, INH and INx pins need to be all connected to GND. When the INH is high, in each half bridge one of the two power switches (HSx or LSx) is switched on, while the other power switch is switched off, depending on the status of the INx pin. When INH is low, a high INx signal will turn the corresponding highside switches on. This provides customer the possibility to switch on one high side switch while keeping the other switches off and therefore to do an open load detection together with external circuitry (see also Chapter 7 - Application Information). A low on all INx and INH signal will turn off both power switches. To drive the logic inputs no external driver is needed, therefore the BTM7745G can be interfaced directly to a microcontroller.
6.4.2
Dead Time Generation
In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, which senses the status of the MOSFETs to ensure that the high or low side switch can be switched on only if the corresponding low or high side switch is completely turned off.
6.4.3
Status Flag Diagnosis
The status pin provides diagnostic signal of the device. It is an open drain output which requires a pull-up resistor. In case of overvoltage, overtemperature and overcurrent situation the status output is switched to low. In case of current limitation the status output is activated for 1.5 * tCLS.
Data Sheet
17
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Block Description and Characteristics
6.4.4
Truth Table
Inputs INH IN1 0 0 0 1 1 0 1 1 X X 0 X 1 X 0 IN2 0 0 1 0 1 1 0 1 X X 0 X X 1 X ON OFF X X 0 Short Circuit in LS1 detected, half bridge 2 operates in normal mode Short Circuit in HS1 detected, half bridge 2 operates in normal mode Short Circuit in HS1 detected Short Circuit in LS2 detected, half bridge 1 operates in normal mode Short Circuit in HS2 detected, half bridge 1 operates in normal mode Short Circuit in HS2 detected 0 1 1 1 1 Outputs HS1 LS1 HS2 LS2 OFF ON OFF ON ON ON ON ON ON OFF ON ON ST Stand-by mode, reset – – – – Enable Open-load detection Enable Open-load detection Shut-down of LSS, HSS activated, error detected UV lockout, reset Stand-by mode, reset of latch Shut-down with latch, error detected 1 OFF OFF OFF OFF 1 OFF 1 1 OFF 1 OFF 1 OFF 1 OFF 0 Mode
Device State Normal operation
OFF OFF ON OFF ON
Open-Load detection mode Over-voltage (OV) Under-voltage (UV)
0 0 0 X X
OFF OFF ON OFF ON OFF ON
OFF OFF OFF 1
OFF OFF OFF OFF 1 OFF OFF OFF OFF 1 OFF OFF OFF OFF 0
Overtemperature or 0 short circuit of HSS or 1 LSS 1) X X Current limitation mode half bridge 1 1
1
1
X
OFF ON
X
X
0
0 Current limitation mode half bridge 2 1
1 X
X 0
OFF OFF X X X ON
X
0
OFF 0
1
X
1
X
X
OFF ON
0
0
X
1
X
X
OFF OFF 0
1) In short circuit of HSS or LSS, the junction temperature will arise and as soon as the over temperature shut down threshold is reached the device will shut down and latch the status. Short circuit of HSS and LSS itself won’t be detected as failure.
Inputs: 0 = Logic LOW 1 = Logic HIGH X = 0 or 1
Switches OFF = switched off ON = switched on X = switched on or off
Status Flag ST: 0 = Logic LOW (error) 1 = Logic HIGH (normal operation)
Data Sheet
18
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Block Description and Characteristics
6.4.5
Electrical Characteristics - Control and Diagnostics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified) Pos. Parameter Symbol Control Inputs (IN and INH) 6.4.1 6.4.2 6.4.3 6.4.4 6.4.5 High level threshold voltage VINH(H), – INH, IN1, IN2 VIN1(H), VIN2(H) Low level threshold voltage VINH(L), 1.1 INH, IN1, IN2 VIN1(L), VIN2(L) Input voltage hysteresis Input current Input current
VINHHY,VINHY IINH(H), IIN1(H), IIN2(H) IINH(L), IIN1(L), IIN2(L)
Limit Values Min. Typ. 1.6 1.4 200 30 25 Max. 2 – – 200 125
Unit
Test Conditions
V V mV µA µA
– –
1)
– – –
VIN1,VIN2,VINH = 5.5 V VIN1, VIN2, VINH = 0.4 V
Status Signal 6.4.6 6.4.7 Status Low output voltage Status leakage current
VST(LOW) IST(LK)
– –
– –
0.4 1
V µA
IST = 1.6 mA VST = 0...28 V
1) Not subject to production test, specified by design.
Data Sheet
19
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Application Information
7
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device.
Microcontroller XC866
I/O Reset Vdd
CQ 22µF
Voltage Regulator
WO RO Q D
CD 47nF
Reverse Polarity Protection
VS
TLE 4278G
GND
I
DZ1 10V
I/O
I/O
I/O
I/O
I/O
I/O
Vss
R1 10kΩ
e.g. IPD50P03P4L-11
RST 4.7kΩ
BTM7745G
INH HS1
VS HS2
VS
CSc CS
RINH 4.7kΩ
IN1
RIN1 4.7kΩ
OUT1
IN2
RIN2 4.7kΩ
OUT2
M
ST
LS1 GND
LS2 GND
RD1 RD2
Figure 13
Application Diagram
Note: This is a very simplified example of an application circuit. The function must be verified in the real application.
7.1
Application and Layout Considerations
Due to the fast switching times for high currents, special care has to be taken during the PCB layout. Stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The BTM7745G has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the offset between power ground and logic ground pins of the device is minimized. It is also necessary to ensure that all VS pins are at the same voltage level. Therefore the VS pins need to be shorted together. Voltage differences between the VS pins may cause parameter deviations (such as reduced current limits) up to a latched shutdown of the device with error signal on the ST pin, similar to overtemperature shutdown. Due to the fast switching behavior of the device in current limitation mode or overvoltage lock out a low ESR electrolytic capacitor Cs of at least 100 µF from VS to GND is recommended. This prevents destructive voltage peaks and drops on VS. This is recommended for both PWM and non PWM controlled applications. The value of the capacitor must be verified in the real application. In addition a ceramic capacitor Csc from VS to GND close to each device is recommended to provide current for the switching phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this capacitor would be about 470 nF.
Data Sheet
20
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Application Information It is recommended to do the freewheeling in the low side path to ensure a proper function and avoid unintended overtemperature detection and shutdown. For proper operation it is also recommended to put a pull-down resistor RDx on each output OUTx to GND with a value in the range of e.g. 1...10 kΩ. These resistors can also be used for open load detection. Considerations for Open Load Detection Mode As mentioned in Chapter 6.4.1 both high side switches can be switched on independently while all other switches are off. This will be realized by setting the corresponding IN signal to high while INH and the other IN are low. Device State Open-Load detection mode Inputs INH 0 0 0 IN1 0 1 1 IN2 1 0 1 Outputs HS1 OFF ON ON LS1 HS2 LS2 OFF OFF OFF ST 1 1
1
Mode HS2 active HS1 active both HSx are active
OFF ON OFF OFF OFF ON
Together with the recommended pull-down resistors on the outputs OUTx to GND this provides the possibility to do an open load detection in H-bridge configuration. In case of one high side is active while the other half bridge is off (HS off and LS off) a current of up to 2mA will be sourced out of the OUT of the high ohmic half bridge. This has to be considered while choosing the right value of the pull-down resistor.
Data Sheet
21
Rev. 1.0, 2010-05-28
High Current H-Bridge BTM7745G
Package Outlines
8
Package Outlines
0.2 -0.1 STAND OFF 2.45 -0.2 2.65 MAX.
0.35 x 45˚
0.23 +0.09
7.6 -0.2 1)
0.65
C
17 x 0.65 = 11.05
2)
0.1 C 36x SEATING PLANE
0.7 ±0.2 10.3 ±0.3
D
0.33 ±0.08
0.17 M C A-B D 36x
19
A
36
Ejector Mark Depth 0.2 MAX.
1
18
B 1) 12.8 -0.2
Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.05 max. per side
PG-DSO-36-20, -29, -34, -43, -44-PO V05
Footprint
1.67
0.65
0.45
9.73
HLGF1145
Figure 14
PG-DSO-36-29 (Plastic Green Dual Small Outline Package)
Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 22
Dimensions in mm Rev. 1.0, 2010-05-28
8˚ MAX.
1.1
High Current H-Bridge BTM7745G
Revision History
9
Revision 1.0
Revision History
Date 2010-05-28 Changes Initial version Data Sheet
Data Sheet
23
Rev. 1.0, 2010-05-28
Edition 2010-05-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
工商网监
湘ICP备2023018690号
