BTN7975B

Data Sheet, Rev. 1.0, March 2009 BTN7975B High Current PN Half Bridge NovalithIC™ Automotive Power High Current PN Half Bridge BTN7975B Table of Contents 1 2 2.1 2.2 3 3.1 3.2 4 4.1 4.2 4.3 5 5.1 5.2 5.2.1 5.2.2 5.2.3 5.3 5.3.1 5.3.2 5.3.3 5.3.4 5.3.5 5.3.6 5.4 5.4.1 5.4.2 5.4.3 5.4.4 5.4.5 5.4.6 6 6.1 6.2 6.3 7 8 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 8 8 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Status Flag Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Half-bridge Configuration Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 22 22 23 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Data Sheet 2 Rev. 1.0, 2009-03-31 High Current PN Half Bridge NovalithIC™ BTN7975B 1 Features • Overview Path resistance of max. 30.5 mΩ @ 150 °C (typ. 16 mΩ @ 25 °C) High Side: max. 12.8 mΩ @ 150 °C (typ. 7 mΩ @ 25 °C) Low Side: max. 17.7 mΩ @ 150 °C (typ. 9 mΩ @ 25 °C) Low quiescent current of typ. 7 μA @ 25 °C PWM capability of up to 25 kHz combined with active freewheeling Switched mode current limitation for reduced power dissipation in overcurrent Current limitation level of 50 A min. / 70 A typ. (low side) Status flag diagnosis Overtemperature shut down with latch behaviour Overvoltage lock out Undervoltage shut down Driver circuit with logic level inputs Adjustable slew rates for optimized EMI Operation up to 28V Green Product (RoHS compliant) AEC Qualified • • • • • • • • • • • • • PG-TO263-7-1 Description The BTN7975B is an integrated high current half bridge for motor drive applications. It is part of the NovalithIC™ family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with status flag, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTN7975B provides a cost optimized solution for protected high current PWM motor drives with very low board space consumption. Type BTN7975B Data Sheet Package PG-TO263-7-1 3 Marking BTN7975B Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Diagram 2 Block Diagram The BTN7975B is part of the NovalithIC™ family containing three separate chips in one package: One p-channel highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming an integrated high current half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by chip technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with status flag, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage, undervoltage, overcurrent and short circuit. The BTN7975B can be combined with other BTN7975B to form Hbridge and 3-phase drive configurations. 2.1 Block Diagram VS Overcurr. Detection HS Undervolt. detection Overvolt. detection ST Overtemp. detection Digital Logic Gate Driver HS LS off HS off OUT IN Gate Driver LS INH SR Slewrate Adjustment Overcurr. Detection LS GND Figure 1 Block Diagram 2.2 Terms Following figure shows the terms used in this data sheet. VVS ,V S IIN V IN V IN H VSR I IN H ISR IST IN VS IVS , -I D ( H S) VD S(H S) I NH O UT SR IOU T , I L VSD ( LS) VOU T ST VST G ND IGN D , ID ( LS) Figure 2 Data Sheet Terms 4 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Pin Configuration 3 3.1 Pin Configuration Pin Assignment 8 1234 5 67 Figure 3 Pin Assignment BTN7975B (top view) 3.2 Pin 1 2 3 4,8 5 Pin Definitions and Functions Symbol GND IN INH OUT SR I/O I I O I Function Ground Input Defines whether high- or lowside switch is activated Inhibit When set to low device goes in sleep mode Power output of the bridge Slew Rate The slew rate of the power switches can be adjusted by connecting a resistor between SR and GND Status Flag Supply 6 7 ST VS O - Bold type: pin needs power wiring Data Sheet 5 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B General Product Characteristics 4 4.1 General Product Characteristics Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Voltages 4.1.1 4.1.2 4.1.3 4.1.4 4.1.5 Currents 4.1.6 HS/LS Continuous Drain Current2) Supply Voltage Logic Input Voltage Voltage at SR Pin Voltage between VS and ST Pin Voltage at ST Pin Parameter Symbol Min. Limit Values Max. 45 5.3 1.0 45 45 44 40 90 V V V V V A A A – – – – – Unit Conditions VS VIN VINH VSR VS -VST VST ID(HS) ID(LS) -0.3 -0.3 -0.3 -0.3 -20 -44 -40 TC < 85°C switch active TC < 125°C switch active 4.1.7 HS/LS Pulsed Drain Current 2) ID(HS) ID(LS) -90 TC < 85°C tpulse = 10ms single pulse -85 85 A TC < 125°C tpulse = 10ms single pulse 4.1.8 HS/LS PWM Current 2) ID(HS) ID(LS) -55 -50 -60 -54 55 50 60 54 A A A A TC < 85°C f = 1kHz, DC = 50% TC < 125°C f = 1kHz, DC = 50% TC < 85°C f = 20kHz, DC = 50% TC < 125°C f = 20kHz, DC = 50% Temperatures 4.1.9 4.1.10 4.1.11 Junction Temperature Storage Temperature ESD Susceptibility HBM IN, INH, SR, ST OUT, GND, VS Tj Tstg VESD -40 -55 150 150 °C °C kV – – HBM3) ESD Susceptibility -2 -6 2 6 1) Not subject to production test, specified by design 2) Maximum reachable current may be smaller depending on current limitation level 3) ESD susceptibility, HBM according to EIA/JESD22-A114-B (1.5 kΩ, 100 pF) Data Sheet 6 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B General Product Characteristics Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Maximum Single Pulse Current 100 90 80 70 |I max | [A] 60 50 40 30 20 10 0 1,0E-03 1,0E-02 1,0E-01 t pulse[s] 1,0E+00 1,0E+01 Figure 4 BTN7975B Maximum Single Pulse Current (TC < 85°C) This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited due to thermal protection of the device. Data Sheet 7 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B General Product Characteristics 4.2 Pos. 4.2.1 4.2.2 4.2.3 Functional Range Parameter Supply Voltage Range for Nominal Operation Symbol Min. Limit Values Max. 18 28 150 V V °C – Parameter Deviations possible – 8 5.5 -40 Unit Conditions VS(nom) Extended Supply Voltage Range for VS(ext) Operation Junction Temperature Tj Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the Electrical Characteristics table. 4.3 Pos. 4.3.1 Thermal Resistance Parameter Thermal Resistance Junction-Case, Low Side Switch1) Rthjc(LS) = ΔTj(LS)/ Pv(LS) Thermal Resistance Junction-Case, High Side Switch1) Rthjc(HS) = ΔTj(HS)/ Pv(HS) Thermal Resistance Junction-Case, both Switches1) Rthjc = max[ΔTj(HS), ΔTj(LS)] / (Pv(HS) + Pv(LS)) Thermal Resistance Junction-Ambient1) Symbol Min. Limit Values Typ. 1.3 Max. 1.8 K/W – Unit Conditions RthJC(LS) – 4.3.2 RthJC(HS) – 0.6 0.9 K/W – 4.3.3 RthJC – 0.7 1.0 K/W – 4.3.4 RthJA – 20 – K/W 2) 1) Not subject to production test, specified by design 2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu). Data Sheet 8 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics 5 5.1 Block Description and Characteristics Supply Characteristics VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0 A, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. General 5.1.1 Supply Current Parameter Symbol Min. Limit Values Typ. 2 Max. 3 mA Unit Conditions IVS(on) – VINH = 5 V VIN = 0 V or 5 V RSR = 0 Ω DC-mode normal operation (no fault condition) 5.1.2 Quiescent Current IVS(off) – 7 12 µA – – 65 µA VINH = 0 V VIN = 0 V or 5 V Tj < 8 5 ° C VINH = 0 V VIN = 0 V or 5 V 25 I V S (o f f ) [µA] 20 15 10 5 0 -40 0 40 80 120 160 T [°C] Figure 5 Typical Quiescent Current vs. Junction Temperature Data Sheet 9 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics 5.2 Power Stages The power stages of the BTN7975B consist of a p-channel vertical DMOS transistor for the high side switch and a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in a separate top chip. Both switches can be operated up to 25 kHz, allowing active freewheeling and thus minimizing power dissipation in the forward operation of the integrated diodes. The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The typical on state resistance characteristics are shown in Figure 6. High Side Switch RON(HS) [ mΩ ] 25 Low Side Switch 25 20 RON(LS ) [mΩ] 20 15 15 Tj = 150°C 10 Tj = 150°C Tj = 25°C Tj = - 40°C 10 Tj = 25°C Tj = - 40°C 5 4 8 12 16 20 24 28 5 4 8 12 16 20 24 28 VS [V] VS [V] Figure 6 Typical ON State Resistance vs. Supply Voltage Data Sheet 10 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics 5.2.1 Power Stages - Static Characteristics VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Min. High Side Switch - Static Characteristics 5.2.1 ON State High Side Resistance Limit Values Typ. Max. mΩ – – 5.2.2 Leakage Current High Side 7 10 – – – 12.8 1 50 µA µA V – – – 0.9 0.8 0.6 – – 0.8 mΩ – – 5.2.5 Leakage Current Low Side 9 14 – – – 17.7 1 10 µA µA V – – – 0.9 0.8 0.7 – – 0.9 Unit Conditions RON(HS) IL(LKHS) – – 5.2.3 Reverse Diode Forward-Voltage VDS(HS) High Side 2) IOUT = 9 A; VS = 13.5 V Tj = 25 °C; 1) Tj = 150 °C VINH = 0 V; VOUT = 0 V Tj < 85 °C; 1) VINH = 0 V; VOUT = 0 V Tj = 150 °C IOUT = -9 A Tj = -40 °C; 1) Tj = 25 °C; 1) Tj = 150 °C IOUT = -9 A; VS = 13.5 V Tj = 25 °C; 1) Tj = 150 °C VINH = 0 V; VOUT = VS Tj < 85 °C; 1) VINH = 0 V; VOUT = VS Tj = 150 °C IOUT = 9 A Tj = -40 °C; 1) Tj = 25 °C; 1) Tj = 150 °C Low Side Switch - Static Characteristics 5.2.4 ON State Low Side Resistance RON(LS) IL(LKLS) – – 5.2.6 Reverse Diode Forward-Voltage VSD(LS) Low Side 2) 1) Not subject to production test, specified by design 2) Due to active freewheeling, diode is conducting only for a few µs, depending on RSR Data Sheet 11 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics 5.2.2 Switching Times IN t dr(HS ) VOUT 90% 90% t r(HS ) t df (HS ) tf (HS ) t ΔVOUT ΔVOUT 10% 10% t Figure 7 Definition of switching times high side (Rload to GND) IN tdf (LS ) VOUT 90% 90% t f (LS ) tdr(LS ) tr(LS ) t ΔV OUT ΔVOUT 10% 10% t Figure 8 Definition of switching times low side (Rload to VS) Due to the timing differences for the rising and the falling edge there will be a slight difference between the length of the input pulse and the length of the output pulse. It can be calculated using the following formulas: • • ΔtHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS)) ΔtLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)). Data Sheet 12 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics 5.2.3 Power Stages - Dynamic Characteristics VS = 13.5 V, Tj = 150 °C, Rload = 2 Ω, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Min. High Side Switch Dynamic Characteristics 5.2.7 Rise-Time of HS Limit Values Typ. Max. µs 0.5 – 2 5.2.8 Slew Rate HS on 1) 1 2 5 10.8 5.4 2.2 3.1 4.4 14 1 2 5 10.8 5.4 2.2 1.6 – 11 V/µs 6.8 – 1 1.5 – 5 5.2.10 Fall-Time of HS 21.6 – 5.4 µs 4.5 – 25 µs 0.5 – 2 5.2.11 Slew Rate HS off 1) 1.6 – 11 V/µs 21.6 – 5.4 µs Unit Conditions tr(HS) RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ ΔVOUT/ tr( HS) 5.2.9 Switch on Delay Time HS tdr(HS) tf(HS) -ΔVOUT/ tf(HS) 6.8 – 1 5.2.12 Switch off Delay Time HS tdf(HS) 1 2.4 3 – 3.4 – 3 10 17 1) Not subject to production test, calculated value; |ΔVOUT|/ tr(HS) or |-ΔVOUT|/ tf(HS) Data Sheet 13 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics VS = 13.5 V, Tj = 150 °C, Rload = 2 Ω, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Min. Low Side Switch Dynamic Characteristics 5.2.13 Rise-Time of LS Limit Values Typ. Max. µs 0.4 – 2 5.2.14 Slew Rate LS switch off 1) 0.9 2 5 12 5.4 2.2 1.3 2.2 5 1 2 5 10.8 5.4 2.2 1.4 – 11 V/µs 7.7 – 1 0.6 – 2 5.2.16 Fall-Time of LS 27 – 5.4 µs 2 – 11 µs 0.5 – 2 5.2.17 Slew Rate LS switch on 1) -ΔVOUT/ tf(LS) 7.2 – 1 5.2.18 Switch on Delay Time LS 1.5 – 11 V/µs 21.6 – 5.4 µs Unit Conditions tr(LS) ΔVOUT/ tr(LS) RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ RSR = 0 Ω RSR = 5.1 kΩ RSR = 51 kΩ 5.2.15 Switch off Delay Time LS tdr(LS) tf(LS) tdf(LS) 2 4 5 – 5.6 – 5 15 25 1) Not subject to production test, calculated value; |ΔVOUT|/ tr(LS) or |-ΔVOUT|/ tf(LS) Data Sheet 14 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics 5.3 Protection Functions The device provides integrated protection functions. These are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not to be used for continuous or repetitive operation, with the exception of the current limitation (Chapter 5.3.4). In a fault condition the BTN7975B will apply the highest slew rate possible independent of the connected slew rate resistor. Overvoltage, overtemperature and overcurrent are indicated by a fault current IST_error at the ST pin as described in the paragraph “Status Flag Diagnosis” on Page 19 and Figure 12. In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other error modes. 5.3.1 Overvoltage Lock Out To assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts the lowside MOSFET off and turns the highside MOSFET on, if the supply voltage is exceeding the over voltage protection level VOV(OFF). The IC operates in normal mode again with a hysteresis VOV(HY) if the supply voltage decreases below the switchon voltage VOV(ON). In H-bridge configuration, this behavior of the BTN7975B will lead to freewheeling in highside during over voltage. 5.3.2 Undervoltage Shut Down To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if the supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON). 5.3.3 Overtemperature Protection The BTN7975B is protected against overtemperature by an integrated temperature sensor. Overtemperature leads to a shut down of both output stages. This state is latched until the device is reset by a low signal with a minimum length of treset at the INH pin, provided that its temperature has decreased at least the thermal hysteresis ΔT in the meantime. Repetitive use of the overtemperature protection impacts lifetime. 5.3.4 Current Limitation The current in the bridge is measured in both switches. As soon as the current in forward direction in one switch (high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is activated for tCLS. During that time all changes at the IN pin are ignored. However, the INH pin can still be used to switch both MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the ST pin is reset after 2 * tCLS. Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the effective current limitation level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 10. Data Sheet 15 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics IL ICLx ICLx 0 tCLS t Figure 9 Timing Diagram Current Limitation (Inductive Load) High Side Switch 90 85 Low Side Switch 90 I C L H [A] I C L L [A] ICLH0 Tj = - 40°C Tj = 25°C Tj = 150°C 80 75 70 65 60 55 50 0 500 80 ICLL0 Tj = - 40°C Tj = 25°C Tj = 150°C 70 60 50 1000 1500 2000 0 500 1000 1500 2000 dIL/dt [A/ms] Figure 10 Typical Current Limitation Level vs. Current Slew Rate dI/dt dIL/dt [A/ms] Data Sheet 16 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics High Side Switch 90 Low Side Switch 90 I C L H [ A] I C L L [ A] 85 85 80 Tj = - 40°C Tj = 25°C 80 75 Tj = 150°C 75 Tj = - 40°C Tj = 25°C Tj = 150°C 70 70 65 65 60 6 8 10 12 14 16 18 20 60 6 8 10 12 14 16 18 20 VS [V] Figure 11 Typical Current Limitation Detection Levels vs. Supply Voltage VS [V] In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation.This method of limiting the current has the advantage of greatly reduced power dissipation in the BTN7975B compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation for a short time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device. 5.3.5 • • • Short Circuit Protection The device is short circuit protected against output short circuit to ground output short circuit to supply voltage short circuit of load The short circuit protection is realized by the previously described current limitation in combination with the overtemperature shut down of the device. Data Sheet 17 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics 5.3.6 Electrical Characteristics - Protection Functions VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Under Voltage Shut Down 5.3.1 5.3.2 5.3.3 5.3.4 5.3.5 5.3.6 5.3.7 5.3.8 Switch-ON Voltage Switch-OFF Voltage ON/OFF hysteresis Switch-ON Voltage Switch-OFF Voltage ON/OFF hysteresis Symbol Min. Limit Values Typ. – – 0.2 – – 0.2 77 70 Max. 5.5 5.5 – – 30 – 98 90 V V V V V V A A Unit Conditions VUV(ON) – VUV(OFF) 4.0 VUV(HY) – VOV(ON) 27.8 VOV(OFF) 28 VOV(HY) – 55 50 VS increasing VS decreasing 1) Over Voltage Lock Out VS decreasing VS increasing 1) Current Limitation Current Limitation Detection level ICLH0 High Side Current Limitation Detection level ICLL0 Low Side Shut OFF Time for HS and LS Thermal Shut Down Junction Temperature Thermal Switch ON Junction Temperature Thermal Hysteresis VS = 13.5 V VS = 13.5 V Current Limitation Timing 5.3.9 5.3.10 5.3.11 5.3.12 5.3.13 tCLS TjSD TjSO ΔT 70 155 150 – 4 115 175 – 7 – 210 200 190 – – µs °C °C K µs VS = 13.5 V; 1) – – 1) 1) Thermal Shut Down Reset Pulse at INH Pin (INH low) treset 1) Not subject to production test, specified by design Data Sheet 18 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics 5.4 5.4.1 Control and Diagnostics Input Circuit The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In this condition one of the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH pin has to be set to low. No external driver is needed. The BTN7975B can be interfaced directly to a microcontroller, as long as the maximum ratings in Chapter 4.1 are not exceeded. 5.4.2 Dead Time Generation In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, generating a so called dead time between switching off one MOSFET and switching on the other. The dead time generated in the driver IC is automatically adjusted to the selected slew rate. 5.4.3 Adjustable Slew Rate In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an external resistor. The slew rate pin SR allows the user to optimize the balance between emission and power dissipation within his own application by connecting an external resistor RSR to GND. 5.4.4 Status Flag Diagnosis The status pin ST is used as a error flag output. In normal operation and load currents IL ≤ 40A a variable leakage current ISTx can be observed on the ST output pin. In case of a fault condition the status output is connected to a constant current source and provides IST_error. The maximum voltage at the ST pin is determined by the choice of the external resistor RST and the supply voltage. In case of current limitation the IST_error is activated for 2 * tCLS. Normal operation: VS ESD-ZD Fault condition: error flag mode VS ST ESD-ZD ISTx IST_error Status Flag output logic ISTx IST_error Status Flag output logic ST RST VST RST VST Figure 12 Status Flag Current Data Sheet 19 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics IST [mA] Error Flag Mode IST_error (min) ISTx (max) Normal Operation 40A Figure 13 Status Flag Current; Normal vs. Error Flag mode ICLx IL [A] 5.4.5 Truth Table Inputs INH IN X 0 1 X 0 1 1 Outputs HSS OFF OFF ON ON LSS OFF ON OFF OFF ST 0 0 0 1 Stand-by mode LSS active HSS active Shut-down of LSS, HSS activated, error detected UV lockout Stand-by mode, reset of latch Shut-down with latch, error detected Switched mode, error detected1) Switched mode, error detected1) Mode Device State Normal Operation Over-Voltage (OV) X Under-Voltage (UV) Overtemperature or Short Circuit of HSS or LSS Current Limitation Mode X 0 1 1 1 X X X 1 0 OFF OFF OFF OFF ON OFF OFF OFF ON OFF 0 0 1 1 1 1) Will return to normal operation after tCLS; Error signal is reset after 2*tCLS (see Chapter 5.3.4) Switches OFF = switched off ON = switched on Status Flag ST 0 = Normal Operation; ISTx 1 = Logic HIGH (error); IST_error Inputs 0 = Logic LOW 1 = Logic HIGH X = 0 or 1 Data Sheet 20 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Block Description and Characteristics 5.4.6 Electrical Characteristics - Control and Diagnostics VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Control Inputs (IN and INH) 5.4.1 5.4.2 5.4.3 5.4.4 5.4.5 High level Voltage INH, IN Low level Voltage INH, IN Input Voltage hysteresis Input Current high level Input Current low level Symbol Min. Limit Values Typ. 1.75 1.6 1.4 350 200 30 25 Max. 2.15 2 – – – 150 125 V V mV µA µA – – 1) Unit Conditions VINH(H) VIN(H) VINH(L) VIN(L) VINHHY VINHY IINH(H) IIN(H) IINH(L) IIN(L) IST_error ISTL ISTH – – 1.1 – – – – VIN = VINH = 5.3 V VIN = VINH = 0.4 V VS = 13.5 V RST = 1kΩ VIN = 0 V or VINH = 0 V; 1) IL ≤ 40A; 1); VIN = VINH = 5 V RST = 1kΩ Status Flag 5.4.6 5.4.7 5.4.8 Status Flag Current Fault Condition Status Flag Leakage Current Status Flag Leakage Current, active high side switch 4 – – 5 – – 6.5 1 3.3 mA µA mA 1) Not subject to production test, specified by design Data Sheet 21 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Application Information 6 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. 6.1 Application Example Microcontroller XC866 I/O Reset Vdd CQ 22µF Voltage Regulator WO RO Q D CD 47nF Reverse Polarity Protection VS TLE 4278G GND I D Z1 10V CS 470µF R1 1k Ω I/O I/O I/O I/O Vss SPD 50P03L R IN1 10k Ω R INH1 10k Ω BTN7975 INH IN ST SR OUT VS C Sc1 470nF CSc2 470nF BTN7975 VS INH IN OUT ST SR GND GND R INH2 10k Ω R IN2 10kΩ M R ST12 470 Ω R SR1 0..51k Ω R SR1 0..51k Ω High Current H-Bridge Figure 14 Application Example: H-Bridge with two BTN7975B Note: This is a simplified example of an application circuit. The function must be verified in the real application. 6.2 Layout Considerations Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The BTN7975B has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the offset between the ground connection of the slew rate resistor, the status flag resistor and ground pin of the device (GND / pin 1) is minimized. If the BTN7975B is used in a H-bridge or B6 bridge design, the voltage offset between the GND pins of the different devices should be small as well. A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this capacitor would be about 470 nF. The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series resistors in the range of 10 kΩ. Data Sheet 22 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Application Information 6.3 Half-bridge Configuration Considerations Please note that, if the BTN7975B is used in a half-bridge configuration with the load connected between OUT and GND and the supply voltage is exceeding the Overvoltage Switch-OFF level VOV(OFF), the implemented “Overvoltage Lock Out” feature leads to automatically turning on the high side switch, while turning off the low side switch, and therefore connecting the load to VS; independently of the current IN- and INH-pin signals (see also “Truth Table” on Page 20). This will lead to current flowing through the load, if not otherwise configured. It shall be insured that the power dissipated in the NovalithIC™ does not exceed the maximum ratings. For further explanations see the application note “BTN79x0 Over Voltage (OV) Operation”. Microcontroller XC866 I/O Reset Vdd Vss CQ 22µF CD 47nF Voltage Regulator WO RO Q D Reverse Polarity Protection VS TLE 4278G GND I D Z1 10V CS 470µF R1 1k Ω I/O I/O I/O SPD 50P03L R IN 10kΩ R INH 10kΩ BTN7975 INH IN ST SR OUT VS C Sc 470nF M R ST 1k Ω R SR 0..51k Ω GND High Current Half-Bridge Figure 15 Application Example: Half-Bridge with a BTN7975B (Load to GND) Note: This is a simplified example of an application circuit. The function must be verified in the real application. Data Sheet 23 Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Package Outlines 7 Package Outlines 4.4 10 ±0.2 0...0.3 1±0.3 1.27 ±0.1 A B 0.05 2.4 0.1 4.7 ±0.5 2.7 ±0.3 7.551) 8.5 1) (15) 9.25 ±0.2 0...0.15 7 x 0.6 ±0.1 6 x 1.27 0.25 M 0.5 ±0.1 AB 8˚ MAX. 0.1 B 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. Footprint GPT09114 10.8 16.15 4.6 9.4 0.47 0.8 8.42 Figure 16 PG-TO263-7-1 (Plastic Green Transistor Single Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Data Sheet 24 Dimensions in mm Rev. 1.0, 2009-03-31 High Current PN Half Bridge BTN7975B Revision History 8 Revision 1.0 Revision History Date 2009-03-31 Changes Initial version data sheet Data Sheet 25 Rev. 1.0, 2009-03-31 Edition 2009-03-31 Published by Infineon Technologies AG 81726 Munich, Germany © 3/31/09 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. 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