BTS118D_06

Smart Low Side Power Switch Power HITFET BTS 118D Features · Logic Level Input · Input Protection (ESD) · Thermal shutdown with auto restart • Green product (RoHS compliant) · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) ID(Nom) EAS 42 100 2.4 2 V mW A J P / PG-TO252-3-11 Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V DC applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded protection functions. Vbb M HITFET â Current Limitation In Pin 1 Drain Pin 2 and 4 (TAB) OvervoltageProtection Gate-Driving Unit Overtemperature Protection ESD Overload Protection Short circuit Protection Pin 3 Source Complete product spectrum and additional information http://www.infineon.com/hitfet Datasheet 1 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Drain source voltage Supply voltage for full short circuit protection Continuous input voltage1) Continuous input current2) -0.2V £ VIN £ 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation 5) TC = 85 °C 6cm 2 cooling area , TA = 85 °C Unclamped single pulse inductive energy 2) Load dump protection VLoadDump2)3) = VA + VS VIN = 0 and 10 V, t d = 400 ms, RI = 2 W, RL = 6 W, VA = 13.5 V Electrostatic discharge voltage2) (Human Body Model) VESD according to Jedec norm EIA/JESD22-A114-B, Section 4 2 kV EAS VLD Tj Tstg Ptot 21 1.1 2 58 J V Symbol VDS Vbb(SC) VIN IIN self limited | IIN | £ 2 -40 ...+150 -55 ... +150 W °C Value 42 42 -0.2 2) ... +10 mA Unit V Thermal resistance junction - case: SMD: junction - ambient @ min. footprint @ 6 cm 2 cooling area 4) 1For input voltages beyond these limits I has to be limited. IN 2not subject to production test, specified by design 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 5not subject to production test, calculated by R thJA and Rds(on) R thJC R thJA 3 115 55 K/W Datasheet 2 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40...+85 °C, V DS = 32 V , VIN = 0 V Tj = 150 °C Input threshold voltage ID = 0.6 mA, T j = 25 °C ID = 0.6 mA, T j = 150 °C On state input current On-state resistance VIN = 5 V, ID = 2.2 A, Tj = 25 °C VIN = 5 V, ID = 2.2 A, Tj = 150 °C On-state resistance VIN = 10 V, I D = 2.2 A, T j = 25 °C VIN = 10 V, I D = 2.2 A, T j = 150 °C Nominal load current 5) Tj < 150°C, V IN = 10 V, TA = 85 °C, SMD 1) Nominal load current 5) VIN = 10 V, VDS = 0.5 V, TC = 85 °C, Tj < 150°C Current limit (active if VDS>2.5 V)2) VIN = 10 V, VDS = 12 V, t m = 200 µs 1@ 6 cm2 cooling area 2Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condit and a short circuit occurs, these values might be exceeded for max. 50 µs. 5not subject to production test, calculated by R thJA and Rds(on) Symbol min. VDS(AZ) IDSS VIN(th) 1.3 0.8 IIN(on) R DS(on) R DS(on) ID(Nom) ID(ISO) ID(lim) 2.4 3.5 10 42 Values typ. max. 55 Unit V µA 1.5 4 1.7 10 90 160 70 130 3.2 5 15 8 12 V 2.2 30 120 240 100 200 20 A µA mW Datasheet 3 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Dynamic Characteristics Turn-on time Turn-off time VIN to 90% ID : ton toff -dVDS/dt on dVDS/dtoff 40 70 0.4 0.6 100 100 1.5 1.5 V/µs µs RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V VIN to 10% ID: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Thermal hysteresis 2) Input current protection mode Tj = 150 °C Unclamped single pulse inductive energy 2) ID = 2.2 A, Tj = 25 °C, Vbb = 12 V EAS 2 J Tjt DT jt IIN(Prot) 150 175 10 100 300 °C K µA Symbol min. Values typ. max. Unit Inverse Diode Inverse diode forward voltage IF = 10.9 A, tm = 250 µs, V IN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design VSD - 1.0 1.5 V Datasheet 4 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D Block diagram Terms Inductive and overvoltage output clamp RL V I IN 1 IN HITFET S VIN 3 2 D ID VDS Vbb Z D S HITFET Input circuit (ESD protection) Short circuit behaviour Gate Drive Input V IN Source/ Ground IIN ID S T j Datasheet 5 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D 1 Maximum allowable power dissipation Ptot = f(TC) resp. Ptot = f(TA) @ R thJA=55 K/W 3 2 On-state resistance R ON = f(Tj); ID =2.2A; VIN=10V 225 mW W Rthjc = 3 K/W max. 175 Ptot 2 SMD @ 6cm2 RDS(on) 150 125 100 typ. 1.5 1 75 50 0.5 25 0 -50 -25 0 25 50 75 100 °C 150 0 -50 -25 0 25 50 75 100 125 °C 175 TA;TC Tj 3 On-state resistance R ON = f(Tj); I D=2.2A; V IN=5V 250 4 Typ. input threshold voltage VIN(th) = f(Tj); ID = 0.3 mA; V DS = 12V 2 max. V mW 200 1.6 RDS(on) 175 typ. VGS(th) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 150 125 100 75 50 25 0 -50 -25 0 25 50 75 100 125 °C 175 -25 0 25 50 75 100 °C 150 Tj Tj Datasheet 6 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D 5 Typ. transfer characteristics I D=f(V IN); VDS=12V; T Jstart=25°C 16 A 6 Typ. short circuit current ID(lim) = f(Tj); VDS=12V Parameter: V IN 24 A 12 20 ID ID 18 16 14 10 8 6 Vin=10V 4 12 2 5V 0 1 2 3 4 5 6 7 8 V 10 10 -50 -25 0 25 50 75 100 125 °C 175 VIN Tj 7 Typ. output characteristics I D=f(V DS); T Jstart=25°C Parameter: V IN 20 Vin=10V A 7V 8 Off-state drain current IDSS = f(T j) 13 µA 11 max. 16 14 6V 10 5V 4V IDSS 9 8 7 6 ID 12 10 8 6 5 3V 4 3 2 typ. 4 2 1 0 0 1 2 3 4 V 6 0 -50 -25 0 25 50 75 100 125 °C 175 VDS Tj Datasheet 7 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D 9 Typ. overload current ID(lim) = f(t), Vbb=12 V, no heatsink Parameter: Tjstart 25 10 Typ. transient thermal impedance ZthJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 K/W 2 D=0.5 1 A -40°C 10 0.2 0.1 ID(lim) 25°C ZthJA 15 85°C 10 0 0.05 0.02 0.01 10 +150°C 10 -1 5 10 -2 Single pulse 0 0 10 0.5 1 1.5 2 2.5 3 3.5 4 ms -3 5 10 10 10 10 10 10 10 10 10 10 10 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 s 10 4 t tp 11 Determination of ID(lim) ID(lim) = f(t); t m = 200µs Parameter: TJstart 25 A ID(lim) -40°C 15 25°C 85°C 10 150°C 5 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Datasheet 8 Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D Package Outlines 1 Package Outlines 6.5 +0.15 -0.05 5.4 ±0.1 (4.24) 1 ±0.1 A B 0.9 +0.20 -0.01 0...0.15 0.51 MIN. 2.3 +0.05 -0.10 0.5 +0.08 -0.04 (5) 9.98 ±0.5 6.22 -0.2 0.15 MAX. per side 0.8 ±0.15 3x 0.75 ±0.1 2.28 0.5 +0.08 -0.04 0.1 B 4.57 0.25 M AB All metal surfaces tin plated, except area of cut. GPT09277 Figure 1 PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.3, 2006-12-22 Smart Low Side Power Switch Power HITFET BTS 118D Revision History 2 Version Rev. 1.3 Rev. 1.2 Revision History Date 2006-12-22 2006-12-11 Changes released automotive green and robust version (BTS) Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added released non automotive green version (ITS) released production version Rev. 1.1 Rev. 1.0 2006-08-08 2004-03-05 Datasheet 10 Rev. 1.3, 2006-12-22 Edition 2006-12-22 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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