BTS140

TEMPFET® BTS 140 A Features q q q q N channel Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shorted to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 140A VDS 50 V ID 42 A RDS(on) 0.028 Ω Package TO-220AB Ordering Code C67078-S5011-A2 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 65 °C ISO drain current TC = 85° C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol Values 50 50 ± 20 42 13.5 168 80 1200 125 – 55 ... + 150 E 55/150/56 K/W ≤ 1.0 ≤ 75 °C – W A Unit V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg – – TC = 25 °C Tj = – 55 ... + 150 °C Short circuit dissipation, Tj = – 55 ... + 150 °C Power dissipation Operating and storage temperature range DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal resistance Chip-case Chip-ambient Rth JC Rth JA 1 04.97 TEMPFET® BTS 140 A Electrical Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage Values typ. max. Unit V(BR)DSS 50 – 3.0 – 3.5 V VGS = 0, ID = 0.25 mA Gate threshold voltage VGS = VDS, ID = 1 mA Zero gate voltage drain current VGS = 0 V, VDS = 50 V Tj = 25 °C Tj = 125 °C Gate-source leakage current VGS = ± 20 V, VDS = 0 Tj = 25 °C Tj = 150 °C Drain-source on-state resistance VGS = 10 V, ID =32 A Dynamic Characteristics Forward transconductance VDS ≥ 2 × ID × RDS(on)max, ID = 32 A Input capacitance VGS = 0, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0, VDS = 25 V, f = 1 MHz VGS(th) 2.5 I DSS – – 0.1 10 1.0 100 µA I GSS – – 10 2.0 0.024 100 4.0 0.028 nA µA Ω – RDS(on) gfs 12 26 1800 800 280 35 85 220 140 – S pF – 2400 1200 450 50 130 280 180 ns Ciss Coss – Crss – – – – – Turn-on time ton, (ton = td(on) + tr) td(on) VCC = 25 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t r Turn-off time toff, (toff = td(off) + tf) td(off) VCC = 25 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t f 2 04.97 TEMPFET® BTS 140 A Electrical Characteristics (cont’d) at Tj = 25 °C, unless otherwise specified. Parameter Symbol min. Reverse Diode Continuous source current Pulsed source current Diode forward on-voltage I F = 84 A, VGS = 0 Reverse recovery time I F = I S, diF/dt = 100 A/µs, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 A/µs, VR = 30 V Temperature Sensor Forward voltage I TS(on) = 10 mA, Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Forward current Tj = – 55 ... + 150 °C Sensor override, tp ≤ 100 µs Tj = – 55 ... + 160 °C Holding current, VTS(off) = 5 V, Switching temperature VTS = 5 V Turn-off time VTS = 5 V, ITS(on) = 2 mA Values typ. max. Unit IS I SM VSD – – – – – 1.8 80 0.14 42 168 A V 2.2 ns – µC – t rr – Q rr – VTS(on) – – 1.4 – – – 0.1 0.2 – – 1.50 10 V ITS(on) – – 5 600 0.5 0.3 mA Tj = 25 °C Tj = 150 °C IH TTS(on) 0.05 0.05 150 °C – µs 0.5 2.5 toff 3 04.97 TEMPFET® BTS 140 A Examples for short-circuit protection at Tj = – 55 ... + 150 °C, unless otherwise specified. Parameter Symbol 1 Examples 2 – Unit Drain-source voltage Gate-source voltage Short-circuit current Short-circuit dissipation Response time Tj = 25 °C, before short circuit VDS VGS ISC PSC tSC(off) 15 6.2 ≤ 80 ≤ 1200 ≤ 20 30 5.0 ≤ 40 ≤ 1200 ≤ 25 – – – – – V A W ms Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = – 55 ... +150°C Max. gate voltage VGS(SC) = f (VDS) Parameter: Tj = – 55 ... + 150°C 4 04.97 TEMPFET® BTS 140 A Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID) Parameter: VGS Typical output characteristics ID = f (VDS) Parameter: tp = 80 µs Safe operating area ID = f (VDS) Parameter: D = 0.01, TC = 25 °C 5 04.97 TEMPFET® BTS 140 A Drain-source on-state resistance RDS(on) = f (Tj) Parameter: ID = 32 A, VGS = 10 V (spread) Gate threshold voltage VGS(th) = f (Tj) Parameter: VDS = VGS, ID = 1 mA Typ. transfer characteristic ID = f (VGS) Parameter: tp = 80 µs, VDS = 25 V Typ. transconductance gfs = f (ID) Parameter: tp = 80 µs, VDS = 25 V 6 04.97 TEMPFET® BTS 140 A Continuous drain current ID = f (TC) Parameter: VGS ≥ 10 V Forward characteristics of reverse diode IF = f (VSD) Parameter: Tj, tp = 80 µs (spread) Typ. gate-source leakage current IGSS = f (TC) Parameter: VGS = 20 V, VDS = 0 Typ. capacitances C = f (VDS) Parameter: VGS = 0, f = 1 MHz 7 04.97 TEMPFET® BTS 140 A Transient thermal impedance ZthJC = f (tp) Parameter: D = tp/T 8 04.97 TEMPFET® BTS 140 A TO 220 AB Standard Ordering Code C67078-S5011-A2 9.9 9.5 2.8 3.7 4.4 1.3 12.8 17.5 1 4.6 3) 9.2 1) 0.75 2.54 1.05 2.54 0.5 2.4 GPT05155 1) punch direction, burr max. 0.04 2) dip tinning 3) max. 14.5 by dip tinning press burr max. 0.05 13.5 2) 15.6 9 04.97 TEMPFET® BTS 140 A Edition 04.97 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2000. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 04.97