BTS141TC

Smart Low Side Power Switch HITFET BTS 141TC Features • Logic Level Input • Input Protection (ESD) •=Thermal shutdown with latch • Overload protection • Short circuit protection • Overvoltage protection • Current Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) I D(lim) I D(ISO) EAS 60 28 25 12 V mΩ A A 4000 mJ limitation • Status feedback with external input resistor • Analog driving possible • AEC qualified • Green product (RoHS compliant) Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • μC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® chip on chip technology. Providing embedded protection functions. V bb + LOAD M D rain 2 1 IN dv /d t lim ita tio n C u rre n t O ve rvoltag e p rotection lim ita tio n ESD O v erloa d pro te ctio n O ve rte m pe rature p ro te ctio n S ho rt c ircu it S h ort circ uit p rotection p ro te ctio n S o u rce 3 H IT F E T Datasheet 1 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Drain source voltage Drain source voltage for short circuit protection Continuous input current 1) -0.2V ≤ VIN ≤ 10V VIN < -0.2V or VIN > 10V Operating temperature Storage temperature Power dissipation TC = 25 °C Unclamped single pulse inductive energy ID(ISO) = 12 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VIN=low or high; VA =13.5 V td = 400 ms, RI = 2 Ω, ID =0,5*12A td = 400 ms, RI = 2 Ω, ID = 12A 100 84 VLD 3000 V EAS 4000 mJ Tj Tstg Ptot Symbol VDS VDS(SC) IIN no limit | IIN | ≤ 2 - 40 ... +150 - 55 ... +150 149 W °C Value 60 32 mA Unit V Thermal resistance junction - case: junction - ambient: SMD version, device on PCB: 3) R thJC R thJA R thJA 0.84 75 45 K/W 1In case of thermal shutdown a minimum sensor holding current of 500 μA has to be guaranteed (see also page 3). 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70μm thick) copper area for Drain connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Electrical Characteristics Parameter at Tj=25°C, unless otherwise specified Characteristics Drain source clamp voltage Tj = - 40 ...+ 150°C, ID = 10 mA Off state drain current VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V Input threshold voltage ID = 2,7 mA Input current - normal operation, ID 2 mA @ VIN >10V. t0: Turn on into a short circuit tm: Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Datasheet 5 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Maximum allowable power dissipation Ptot = f(Tc ) BTS 141 On-state resistance RON = f(Tj ); ID=12A; VIN =10V 60 160 W Ω RDS(on) 120 Ptot 40 100 max. 80 30 typ. 60 20 40 10 20 0 -50 0 0 20 40 60 80 100 120 °C 150 160 -25 0 25 50 75 100 °C 150 Tj On-state resistance R ON = f(Tj ); ID= 12A; V IN=5V 70 Typ. input threshold voltage VIN(th) = f(Tj); ID =2,7mA; VDS =12V 2.0 V Ω 1.6 RDS(on) VIN(th) typ. 50 1.4 1.2 1.0 0.8 0.6 0.4 40 max. 30 20 10 0.2 0 -50 0.0 -50 -25 0 25 50 75 100 °C 150 -25 0 25 50 75 100 °C 150 Tj Tj Datasheet 6 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Typ. transfer characteristics ID = f(VIN); VDS =12V; Tj =25°C 28 Typ. output characteristic ID = f(VDS); Tj =25°C Parameter: V IN 35 10V 6V 5V A A 20 25 4V ID 16 ID 20 12 15 8 10 Vin=3V 4 5 0 0 1 2 3 4 5 6 V 8 0 0 1 2 3 4 V 6 VIN VDS Transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 K/W 1 10 0 ZthJC D=0.5 0.2 10 -1 0.1 0.05 0.02 10 -2 0.01 0.005 0 10 -3 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 2 tP Datasheet 7 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Application examples: Status signal of thermal shutdown by monitoring input current R St IN D S V bb μC V IN HITFET ΔV V IN thermal shutdown ΔV = RST *IIN(3) Datasheet 8 Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Package Outlines 1 Package Outlines 4.4 10 ±0.2 0...0.3 8.5 1) A 1.27 ±0.1 B 0.05 1 ±0.3 9.25 ±0.2 7.55 1) (15) 1.3 ±0.3 2.4 0.1 0...0.15 1.05 0.75 ±0.1 2.54 5.08 0.25 M 4.7 ±0.5 2.7 ±0.3 0.5 ±0.1 8˚ MAX. AB 0.1 B 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. Figure 1 PG-TO263-3-2 GPT09085 To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.0, 2009-07-20 Smart Low Side Power Switch HITFET BTS 141TC Revision History 2 Version Rev. 1.0 Revision History Date 2009-07-20 Changes released initial Datasheet Datasheet 10 Rev. 1.0, 2009-07-20 Edition 2009-07-20 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. 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