BTS244Z

Speed TEMPFET BTS244Z Speed TEMPFET® N-Channel Enhancement mode Logic Level Input Analog driving possible Fast switching up to 1 MHz Potential-free temperature sensor with thyristor characteristics Overtemperature protection • Green Product (RoHS Compliant) Avalanche rated 1 5 PG-TO220-5-62 PG-TO220-5-3 • AEC Qualified RDS(on) 13 m Package PG-TO220-5-3 PG-TO220-5-62 PG-TO-220-5-43 D Pin 3 and TAB PG-TO220-5-43 Type BTS 244 Z VDS 55 V G Pin 1 A Pin 2 Temperature Sensor K Pin 4 S Pin 5 Pin 1 2 3 4 5 Symbol G A D K S Function Gate Anode Temperature Sensor Drain Cathode Temperature Sensor Source Data Sheet 1 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Maximum Ratings Parameter Drain source voltage Drain-gate voltage, RGS = 20 k Gate source voltage Nominal load current (ISO 10483) VGS = 4.5 V, VDS VGS = 10 V, VDS 0.5 V, TC = 85 °C 0.5 V, TC = 85 °C ID ID puls EAS Ptot Tj Tjpeak Tstg Symbol VDS V Value 55 55 20 A 19 26 35 188 1.65 170 -40 ...+175 200 -55 ... +150 E 40/150/56 J W °C Unit V DGR VGS ID(ISO) Continuous drain current 1) TC = 100 °C, VGS = 4.5V Pulsed drain current Avalanche energy, single pulse ID = 19 A, RGS = 25 Power dissipation TC = 25 °C Operating temperature 2) Peak temperature ( single event ) Storage temperature DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C Data Sheet 2 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Thermal Characteristics Parameter Characteristics junction - case: Thermal resistance @ min. footprint Thermal resistance @ 6 cm2 cooling area 1) Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 130 μA ID = 250 μA Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current VGS = 20 V, VDS = 0 V, Tj = 25 °C VGS = 20 V, VDS = 0 V, Tj = 150 °C Drain-Source on-state resistance VGS = 4.5 V, ID = 19 A VGS = 10 V, ID = 19 A RDS(on) 16 11.5 18 13 IGSS 10 20 100 100 m IDSS 0.1 0.1 1 100 nA VGS(th) 1.2 1.6 1.65 2 μA V(BR)DSS 55 V Symbol min. Values typ. max. Unit Symbol min. RthJC Rth(JA) Rth(JA) - Values typ. 33 max. 0.88 62 40 Unit K/W 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain connection. PCB mounted vertical without blown air. Data Sheet 3 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Dynamic Characteristics Forward transconductance VDS>2*ID *RDS(on)max , ID = 35 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Rise time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 Fall time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2.2 tf 25 40 td(off) 40 60 tr 70 105 td(on) 15 25 ns Crss 320 400 Coss 600 750 gfs Ciss 25 2130 2660 S pF Symbol min. Values typ. max. Unit Gate Charge Characteristics Gate charge at threshold VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 47 A, V GS = 0 to 5 V Gate charge total VDD = 40 V, ID = 47 A, V GS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 47 A Data Sheet 4 Rev.1.3, 2009-12-04 Qg(th) Qg(5) Qg(total) V(plateau) - 2.5 50 85 4.5 3.8 75 130 - nC V Speed TEMPFET BTS244Z Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Reverse Diode Inverse diode continuous forward current TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 94 A Reverse recovery time VR = 30 V, IF =IS, diF/dt = 100 A/μs Reverse recovery charge VR = 30 V, IF =IS, diF/dt = 100 A/μs Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept - Speed TEMPFET”. For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family”. All application notes are available at http://www.infineon.com/tempfet/ Symbol min. IS IFM VSD trr Qrr 35 188 - Values typ. 1.25 110 0.23 max. 1.8 165 0.35 Unit A V ns μC Forward voltage IAK(on) = 5 mA, Tj = -40...+150 °C IAK(on) = 1.5 mA, Tj = 150 °C Sensor override tP = 100 μs, Tj = -40...+150 °C Forward current Tj = -40...+150 °C Sensor override tP = 100 μs, Tj = -40...+150 °C VAK(on) IAK(on) 1.3 1.4 0.9 10 5 600 V mA Data Sheet 5 Rev.1.3, 2009-12-04 Speed TEMPFET BTS244Z Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Sensor Characteristics Temperature sensor leakage current Tj = 150 °C Min. reset pulse duration 1) Tj = -40...+150 °C, IAK(on) = 0.3 mA, VAK(Reset)