BTS247Z_09

Speed TEMPFET BTS247Z Speed TEMPFET® N-Channel Enhancement mode Logic Level Input Analog driving possible Fast switching up to 1 MHz Potential-free temperature sensor with thyristor characteristics Overtemperature protection Avalanche rated • Green Product (RoHS Compliant)







1 5 PG-TO220-5-62 PG-TO220-5-3 • AEC Qualified RDS(on) Package PG-TO220-5-3 PG-TO220-5-62 Ordering Code On Request On Request PG-TO220-5-43 Type BTS 247 Z G Pin 1 A Pin 2 K Pin 4 S Pin 5 Pin 1 2 3 4 5 Symbol G A D K S Data Sheet
VDS 55 V 18 m PG-TO-220-5-43 On Request D Pin 3 and TAB Temperature Sensor Function Gate Anode Temperature Sensor Drain Cathode Temperature Sensor Source 1 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z Maximum Ratings Parameter Drain source voltage Gate source voltage Drain-gate voltage , RGS = 20 k Symbol VDS V Value 55 55 20 A Unit V Nominal load current (ISO 10483) VGS = 10 V, VDS ID(ISO) Continuous drain current 1) TC = 100 °C, VGS = 4.5V Pulsed drain current Avalanche energy, single pulse Power dissipation TC = 25 °C Operating temperature 2) Peak temperature ( single event ) Storage temperature DIN humidity category, DIN 40 040 IEC climatic category; DIN IEC 68-1 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C Data Sheet 2 Rev.1.3, 2009-12-04
ID = 12 A, RGS = 25   VGS = 4.5 V, VDS 0.5 V, TC = 85 °C ID ID puls EAS Ptot Tj Tjpeak Tstg 0.5 V, TC = 85 °C -40 ...+175 200 -55 ... +150 E 40/150/56 
DGR VGS 12 19 33 180 1.3 120 J W °C Speed TEMPFET BTS247Z Thermal Characteristics Parameter Characteristics junction - case: Thermal resistance @ min. footprint Thermal resistance @ 6 cm2 cooling area 1) Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Static Characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 90 μA ID = 250 μA Zero gate voltage drain current VDS = 50 V, VGS = 0 V, Tj = -40 °C VDS = 50 V, VGS = 0 V, Tj = 25 °C VDS = 50 V, VGS = 0 V, Tj = 150 °C Gate-source leakage current VGS = 20 V, VDS = 0 V, Tj = 25 °C VGS = 20 V, VDS = 0 V, Tj = 150 °C Drain-Source on-state resistance VGS = 4.5 V, ID = 12 A VGS = 10 V, ID = 12 A RDS(on) 22 15 28 18 IGSS 10 20 100 100 IDSS 0.1 0.1 1 100 nA VGS(th) 1.2 1.6 1.65 2 μA V(BR)DSS 55 V Symbol min. Values typ. max. Unit Symbol min. RthJC Rth(JA) Rth(JA) - Values typ. 33 max. 1.25 62 40 Unit K/W 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for drain connection. PCB mounted vertical without blown air. Data Sheet 3 Rev.1.3, 2009-12-04
m Speed TEMPFET BTS247Z Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Dynamic Characteristics Forward transconductance VDS>2*ID *RDS(on)max , ID = 33 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 45 A, Rise time RG = 3.6 td(on) 15 25 ns Crss 230 290 Coss 410 515 gfs Ciss 10 1380 1730 S pF Symbol min. Values typ. max. Unit VDD = 30 V, VGS = 4.5 V, ID = 45 A, Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 45 A, Fall time RG = 3.6 VDD = 30 V, VGS = 4.5 V, ID = 45 A, Gate Charge Characteristics Gate charge at threshold VDD = 40 V, ID = 0.1 A, VGS = 0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 45 A, V GS = 0 to 5 V Gate charge total VDD = 40 V, ID = 45 A, V GS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 45 A Data Sheet 4 Rev.1.3, 2009-12-04
RG = 3.6


RG = 3.6 tr - 30 45 td(off) - 30 45 tf - 20 30 Qg(th) Qg(5) Qg(total) V(plateau) - 2 35 60 4.5 3 55 90 - nC V Speed TEMPFET BTS247Z Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Reverse Diode Inverse diode continuous forward current TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 90 A Reverse recovery time VR = 30 V, IF =IS, diF/dt = 100 A/μs Reverse recovery charge VR = 30 V, IF =IS, diF/dt = 100 A/μs Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept - Speed TEMPFET”. For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family”. All application notes are available at http://www.infineon.com/tempfet/ Symbol min. IS IFM VSD trr Qrr 33 180 - Values typ. 1.1 75 0.15 max. 1.7 115 0.25 Unit A V ns μC Forward voltage IAK(on) = 5 mA, Tj = -40...+150 °C IAK(on) = 1.5 mA, Tj = 150 °C Sensor override tP = 100 μs, Tj = -40...+150 °C Forward current Tj = -40...+150 °C Sensor override tP = 100 μs, Tj = -40...+150 °C VAK(on) IAK(on) 1.3 1.4 0.9 10 5 600 V mA Data Sheet 5 Rev.1.3, 2009-12-04 Speed TEMPFET BTS247Z Electrical Characteristics Parameter at Tj = 25°C, unless otherwise specified Sensor Characteristics Temperature sensor leakage current Tj = 150 °C Min. reset pulse duration 1) Tj = -40...+150 °C, IAK(on) = 0.3 mA, VAK(Reset)