BTS3028SDR

HITFET Smart Low Side Power Switch HITFET - BTS3028SDR 28 mOhm single channel smart low side power switch for 12V & 24V Application Datasheet Rev. 1.0, 2009-12-06 Automotive Power HITFET - BTS3028SDR Smart low side power switch 1 2 2.1 3 3.1 3.2 4 4.1 4.2 4.3 4.3.1 5 5.1 5.1.1 5.2 5.2.1 5.2.2 5.3 6 6.1 6.2 6.3 6.4 7 8 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Assignment BTS3028SDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transient Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input and Power Stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Failure Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output On-state Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overvoltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 7 7 8 9 10 10 11 11 11 13 14 16 16 17 18 19 Package Outlines BTS3028SDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch BTS3028SDR 1 Features • • • • • • • • • Overview Short circuit and over load protection Thermal shutdown with restart behavior ESD protection Over voltage protection Logic level input suitable for 5V and 3.3V Analog driving possible 12V and 24V usability Green Product (RoHS compliant) AEC Qualified PG-TO252-3-11 Description The BTS3028SDR is a single channel low-side MOSFET power switch in PG-TO252-3-11 package providing embedded protective functions. The device is monolithically integrated with a N channel vertical power FET and embedded protection functions. The BTS3028SDR is automotive qualified and can be used in 12V and 24V automotive and industrial applications. Table 1 Product Summary Drain voltage1) Maximum Input Voltage Maximum On-State resistance at 150°C at 5V input voltage Typical On-State resistance at 25°C and 10V input voltage Nominal load current Minimum current limitation level 1) Active clamped VD VIN RDS(ON) RDS(ON) ID(nom) ID(lim) 60 V 10 V 91 mΩ 28 mΩ 5.0 A 18.0 A Type BTS3028SDR Datasheet Package PG-TO252-3-11 3 Marking Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Overview Protective Functions • • • • • Electrostatic discharge protection (ESD) Active clamp over voltage protection Thermal shutdown with restart behavior Over load and Short circuit protection Current limitation Analog Fault Information • • • Thermal shutdown Short to Battery Overload Applications • • • • Designed for inductive and lamp loads in automotive and industrial applications. 12V and 24V applications All types of resistive, inductive and capacitive loads Replaces discrete circuits Detailed Description The device is able to switch all kind of resistive, inductive and capacitive loads, limited by EAS and maximum current capabilities. The BTS3028SDR offers ESD protection on the IN Pin which refers to the Source pin (Ground). The overtemperature protection prevents the device from overheating due to overload and/or bad cooling conditions. The temperature information is given by a temperature sensor in the power MOSFET. During thermal shutdown the device sinks an increased input current at the IN pin to feedback the fault condition. The BTS3028SDR has a thermal-restart function. The device will turn on again, if input is still high, after the measured temperature has dropped below the thermal hysteresis. The over voltage protection gets activated during load dump or inductive turn off conditions. The power MOSFET is limiting the drain-source voltage, if it rises above the VDS(clamp). Datasheet 4 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Block Diagram 2 Block Diagram Drain Overvoltage Protection Overtemperature Protection IN Gate Driving Unit ESD Protection Overcurrent limitation Source BlockDiagram.emf Figure 1 Block Diagram 2.1 Terms Figure 2 shows all external terms used in this data sheet. Vbat Vbat ZL ID I IN IN Drain VD Source I Sourc e GND Terms.emf RIN VIN Figure 2 Naming of electrical parameters Datasheet 5 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Pin Configuration 3 3.1 Pin Configuration Pin Assignment BTS3028SDR (top view ) 4 (Tab) Drain 2 1 Figure 3 Pin Configuration PG-TO252-3-11 3 3.2 Pin 1 2,4 3 Pin Definitions and Functions Symbol IN Drain Source Function Input and fault feedback Load connection for power DMOS Ground, Source of power DMOS Datasheet 6 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch General Product Characteristics 4 4.1 General Product Characteristics Absolute Maximum Ratings Absolute Maximum Ratings1) Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Min. Voltages 4.1.1 4.1.2 4.1.3 Drain voltage Drain voltage for short circuit protection Input Current Max. 60 36 V V mA mA A 2) Test Conditions VD VD(SC) IIN – – VIN = 0 V, ID = 10 mA VIN = 5 V -0.2 V < VIN < 10 V self limited -2 2 18 VIN < -0.2 V or VIN > 10 V 3) 4.1.4 Drain Current ID – Energies 4.1.5 Unclamped single pulse inductive energy EAS single pulse – 350 mJ ID(Start) = 7.5A Vbat = 24 V; TJ(start) = 150 °C – – HBM4) Temperatures 4.1.6 4.1.7 4.1.8 1) 2) 3) 4) Operating temperature Storage temperature ESD Resistivity TJ TSTG VESD -40 -55 -2 +150 °C +150 °C 2 kV ESD Susceptibility Not subject to production test, specified by design. Active clamped. Active limited ESD susceptibility, HBM according to EIA/JESD 22-A114, Pin Source connected to Ground Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation 4.2 Pos. 4.2.1 4.2.2 Functional Range Parameter Input pin voltage (device ON) Drain voltage Symbol Min. Limit Values Max. 10 36 V V – – 2 2.5 Unit Conditions VIN VD Datasheet 7 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch General Product Characteristics Pos. 4.2.3 4.2.4 Parameter Input pin current consumption Input pin feedback current Symbol Min. Limit Values Max. 30 400 µA µA normal operation fault indication – – Unit Conditions IIN(ON) IIN(lim) Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 Thermal Resistance Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Pos. 4.3.5 4.3.6 4.3.7 Parameter Junction to Case Junction to Ambient (2s2p) Junction to Ambient (1s0p+600mm2 Cu) Symbol Min. Limit Values Typ. – 25 46 Max. 0.5 – – K/W K/W K/W 1) 2) Unit Conditions RthJC – RthJA(2s2p) – RthJA(1s0p) – 1) 3) 1) 4) 1) Not subject to production test, specified by design 2) Specified RthJC value is simulated at natural convection on a cold plate setup (all pins are fixed to ambient temperature). Ta = 25 °C. Device is loaded with 1W power. 3) Specified RthJA value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm Cu). Ta = 25 °C, Device is loaded with 1W power. 4) Specified RthJA value is according to Jedec JESD51-2,-3 at natural convection on FR4 1s0p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with additional heatspreading copper area of 600mm2 and 70 μm thickness. Ta = 25 °C, Device is loaded with 1W power. Datasheet 8 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch General Product Characteristics 4.3.1 28 Transient Thermal Impedance 24 ZthJA [ K / W ] 20 16 12 8 4 0 0,00001 0,0001 0,001 0,01 0,1 1 10 100 1000 10000 tp [ s ] Figure 4 Typical transient thermal impedance ZthJA = f(tp) , Ta = 25 °C Zth_3028.emf Value is according to Jedec JESD51-2,-7 at natural convection on FR4 2s2p board; The product (Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm³ board with 2 inner copper layers (2 x 70 μm Cu, 2 x 35 μm Cu). Device is dissipating 1 W power. . Datasheet 9 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Input and Power Stage 5 5.1 Input and Power Stage Input Circuit Figure 5 shows the input circuit of the BTS3028SDR. The Zener Diode ZD protects the input circuit against ESD pulses. The internal circuitry is powered via the input pin. During normal operation the Input is connected to the Gate of the power MOSFET. During fault condition the device sinks the current IIN(fault) to give the fault information back to the driving circuit. The current handling capability of the driving circuit does not influence the device behavior as long as the supply current IIN is supplied. I IS I IN IN Logic Gate Fault condition ZD I INf Source Input .emf Figure 5 Input Circuit The following Figure shows the typical input threshold voltage of BTS3028SDR. 1,75 1,50 VIN(th) [ V ] 1,25 1,00 0,75 0,50 -50 -25 0 25 50 75 100 125 150 T [°C] Vinth_3028.emf Figure 6 Typical Input Threshold Voltage Vinth = f(TJ); ID = 1.2mA , VD = VIN The following Figure shows the typical transfer characteristic of BTS3028SDR. Datasheet 10 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Input and Power Stage 50 40 ID [ A ] 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 VIN [ V ] Figure 7 Typical Transfer Characteristic ID = f(VIN); VD = 13.5 V, TJ(start) = 25 °C transferChart_3028.emf 5.1.1 Failure Feedback During failure condition the BTS3028SDR sinks the increased current IIN(fault). 5.2 5.2.1 Power stage Output On-state Resistance The on-state resistance depends on the junction temperature TJ and on the applied input voltage. The following Figures show this dependencies for the typical on-state resistance RDS(on). Temperature dependency of RDS(on) at 3 different input voltage conditions: 0,10 RDS(on) [ Ω ] 0,05 typ. 0,00 -50 Figure 8 -25 0 25 50 75 100 125 150 T [ °C ] Typical On-State Resistance, RDS(on) = f(TJ), VIN = 10 V rdson_10V_3028.emf Datasheet 11 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Input and Power Stage 0,10 RDS(on) [ Ω ] 0,05 typ. 0,00 -50 Figure 9 -25 0 25 50 75 100 125 150 T [ °C ] Typical On-State Resistance, RDS(on) = f(TJ), VIN = 5 V rdson_5V_3028.emf 0,10 R DS(on) [ Ω ] 0,05 typ. 0,00 -50 Figure 10 -25 0 25 T [ °C ] 50 75 100 125 150 rdson_3V_3028.emf Typical On-State Resistance, RDS(on) = f(TJ), VIN = 3V Datasheet 12 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Input and Power Stage 5.2.2 Output Timing A voltage signal at the input pin above the threshold voltage causes the power MOSFET to switch on. Figure 11 shows the timing definition. ton toff IN [V] 10. 0 0 ID [ A] Iload 90 % t 10 % V D [V] V bb 70 % 50 % t t dVds /dt on dVds/ dtoff Switching .emf Figure 11 Definition of Power Output Timing for Resistive Load Datasheet 13 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Input and Power Stage 5.3 Characteristics Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. All voltages with respect to Source Pin unless otherwise stated. Electrical Characteristics: Input and Power Stage Tj = -40 °C to +150 °C, Vbat = 8.0 V to 36V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Input 5.3.1 Supply current from Input Pin 5.3.2 Input current protection mode 5.3.3 Input threshold voltage Power Stage 5.3.4 On-State Resistance Symbol Limit Values Min. Typ. Max. Unit Test Conditions IIN(nom) IIN(lim) VIN(th) – – 0.8 10 100 1.4 30 400 2 μA μA V VD = 0 V; VIN = 10 V VIN = 10 V; TJ = 150 °C VD = VIN; ID = 1.2 mA TJ = 25 °C; VIN = 10 V; ID = 6A RDS(on) – 28 – mΩ – 53 75 mΩ TJ = 150 °C; VIN = 10 V; ID = 6A – 32 – mΩ TJ = 25 °C; VIN = 5 V; ID = 6A – 60 91 mΩ TJ = 150 °C; VIN = 5 V; ID 1) ID 1) ID 1) = 6A – 50 – mΩ TJ = 25 °C; VIN = 3 V; = 6A – 80 128 mΩ TJ = 150 °C; VIN = 3 V; = 6A 5.3.5 Nominal load current ID(nom) 5.0 5.8 – A 5.3.6 Zero input voltage drain current IDSS – 2.5 6 μA – 8 16 μA TJ < 150 °C; TA = 105 °C; VIN = 10 V; VDS = 0.5 V VD = 36 V; VIN = 0 V; TJ = -40 °C to 85 °C VD = 36 V; VIN = 0 V; TJ = 150 °C Datasheet 14 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Input and Power Stage Electrical Characteristics: Input and Power Stage (cont’d) Tj = -40 °C to +150 °C, Vbat = 8.0 V to 36V, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Switching (see Figure 11 for definition details) 5.3.7 Turn-on time Symbol Limit Values Min. Typ. Max. Unit Test Conditions ton – 50 60 100 120 120 120 200 200 1.5 1.5 1.5 1.5 -1.5 – 5.3.8 Turn-off time 50 80 120 toff – – 5.3.9 Slew rate on 5.3.10 Slew rate off Inverse Diode 5.3.11 Inverse Diode forward voltage -dVds/dton – dVds/dtoff – 80 0.7 0.7 0.7 0.7 Vbb=13.5V, RL=4.7 Ω TJ = -40 °C to 85 °C TJ = 150 °C 1) μs Vbb=28V, RL=10 Ω μs Vbb=13.5V, RL=4.7 Ω TJ = -40 °C to 85 °C TJ = 150 °C 1) μs Vbb=28V, RL=10 Ω V/μs Vbb=13.5V, RL=4.7 Ω 1) Vbb=28V, RL=10 Ω V/μs Vbb=13.5V, RL=4.7 Ω 1) Vbb=28V, RL=10 Ω V ID =-51A VIN = 0 V μs VD,inverted – -1.0 1) Not subject to production test, calculated by RthJA and RDS(on). Datasheet 15 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Protection Functions 6 Protection Functions The device provides embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operation. 6.1 Thermal Protection The device is protected against over temperature due to overload and / or bad cooling conditions. To ensure this a temperature sensor located in the Power MOSFET is used. The BTS3028SDR has a thermal-restart function. The device will turn on again, if input is still high, after the measured temperature has dropped below the thermal hysteresis. The protective switch off can be reset by setting the input pin voltage to low. Then the internal logic is not supplied anymore and the next time the voltage on the IN pin rises above the input threshold voltage, the device will switch on, if the temperature is not above the over temperature threshold. see Figure 12. Thermal shutdown IN 5V 0 t TJ TJSD ΔTJSD restart IIN IIN(lim) IIN(nom) 0 t t Thermal_fault_autorestart .emf Figure 12 Error Signal via Input Current at Thermal Shutdown Datasheet 16 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Protection Functions 6.2 Overvoltage Protection When switching off inductive loads with low-side switches, the Drain-Source voltage VD rises above battery potential, because the inductance intends to continue driving the current. Drain Source OutputClamp .emf Figure 13 Output Clamp The BTS3028SDR is equipped with a voltage clamp mechanism that prevents the Drain-Source voltage to rise above VD(Clamp) . See Figure 13 and Figure 14 for more details. Turn off due to over temperature or short circuit IN 5V 0 ID t VD VClamp t Vbat t InductiveLoad .emf Figure 14 Switching an Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS3028SDR. This energy can be calculated by the following equation: V bat – V D(Clamp) ⎛ RL ⋅ IL ⎞ L E = V D(Clamp) ⋅ ---------------------------------------- ⋅ ln ⎜1 – ---------------------------------------- ⎟ + I L ⋅ -----RL V bat – V D(Clamp) ⎠ RL ⎝ Following equation simplifies under assumption of RL = 0 V bat ⎞ 2⎛ 1 E = -- LI L ⋅ ⎜ 1 – ---------------------------------------- ⎟ 2 V bat – V D(Clamp) ⎠ ⎝ Figure 16 shows the inductance / current combination the BTS3028SDR can handle. Datasheet 17 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Protection Functions For maximum single avalanche energy please also refer to EAS value in “Energies” on Page 7 100,00 Vbat = 24V Max . 10,00 L [ mH ] 1,00 0,10 1 10 100 EAS_3028.emf ID [ A ] Figure 15 Maximum load inductance for single pulse L=f (IL), Tj(start)= 150 °C, Vbat= 24V 6.3 Short Circuit Protection The condition short circuit is an overload condition of the device. If the current reaches the limitation value of ID(lim) the device limits the current and starts heating up. When the thermal shutdown temperature is reached, the device turns off. The time from the beginning of current limitation until the over temperature switch off depends strongly on the cooling conditions. The device sinks higher current on IN pin during the protective switch off and switches back ON after the BTS3028SDR cools down below the temperature hysteresis . Figure 16 shows this behavior. Datasheet 18 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Protection Functions Occurrence of Over current or high ohmic Short circuit Turn off due to over temperature Restart after short circuit turn off R estart into normal load condition VIN 5V 0 ID V bat/Zs c t I D(lim ) TJ TJ SD t ΔTJ SD t IIN I IN(lim ) IIN(nom) 0 t Short _circuit.emf Figure 16 Short circuit protection via current limitation and over temperature switch off 6.4 Characteristics Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Electrical Characteristics: Protection Functions Unless otherwise specified: Tj = -40 °C to +150 °C , Vbat = 8.0 V to 36V Pos. Parameter Thermal Protection 6.4.1 Thermal shut down junction temperature 6.4.2 Thermal hysteresis Overvoltage Protection 6.4.3 Drain clamp voltage Current limitation 6.4.4 Current limitation Symbol Limit Values Min. Typ. Max. 1751) – 10 – 45 – 75 58 °C K V A – 1) Unit Test Conditions TJSD ΔTJSD 150 – VD(Clamp) 60 ID(lim) 18 VIN = 0 V; ID = 10 mA VIN = 10 V; VD = 13.5V; tmeasure = 200µs 1) Not subject to production test, specified by design. Datasheet 19 Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Package Outlines BTS3028SDR 7 Package Outlines BTS3028SDR 6.5 +0.15 -0.05 5.4 (4.24) 1 ±0.1 ±0.1 A B 0.9 +0.20 -0.01 0...0.15 0.51 MIN. 2.3 +0.05 -0.10 0.5 +0.08 -0.04 (5) 9.98 ±0.5 6.22 -0.2 0.15 MAX. per side 0.8 ±0.15 3x 0.75 ±0.1 2.28 0.5 +0.08 -0.04 0.1 B 4.57 0.25 M AB All metal surfaces tin plated, except area of cut. GPT09277 Figure 17 PG-TO252-3-11 (Plastic Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). For further information on alternative packages, please visit our website: http://www.infineon.com/packages. Datasheet 20 Dimensions in mm Rev. 1.0, 2009-12-06 HITFET - BTS3028SDR Smart low side power switch Revision History 8 Version Rev. 1.0 Revision History Date 2009-12-06 Changes initial released data sheet Datasheet 21 Rev. 1.0, 2009-12-06 Edition 2009-12-06 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.