BTS308

PROFET® BTS 308 Smart Highside Power Switch • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in OFF-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Features Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Vbb(AZ) Vbb(on) RON IL(ISO) 60 V 4.7 ... 34 V 300 mΩ 1.3 A TO-220AB/5 5 5 1 Straight leads 1 5 Standard SMD • µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • Most suitable for inductive loads • Replaces electromechanical relays, fuses and discrete circuits • Fast switching • Not suitable for lamp loads Application General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. + V bb Voltage source V Logic Voltage sensor 3 Overvoltage protection Current limit Gate protection Charge pump Level shifter Rectifier Limit for unclamped ind. loads Open load OUT 2 IN Temperature sensor 5 ESD Logic Load detection Short circuit detection GND 4 ST  PROFET Load GND 1 Signal GND 1 ) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Semiconductor Group Page 1 of 14 2003-Oct-01 BTS 308 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Electrostatic discharge capability (ESD) IN, ST: (Human Body Model) all other pins: Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 Symbol Vbb IL Tj Tstg Ptot VESD VIN IIN IST Values 60 self-limited -40 ...+150 -55 ...+150 50 1 tbd (>1) -10 ... +16 ±5.0 ±5.0 ≤ 2.5 ≤ 75 Unit V A °C W kV V mA Thermal resistance chip - case: junction - ambient (free air): RthJC RthJA K/W Semiconductor Group Page 2 2003-Oct-01 BTS 308 Electrical Characteristics Parameter and Conditions at Tj = 25 °C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 0.8 A, Vbb = 12V Tj=25 °C: RON Tj=150 °C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 47 Ω, Vbb = 12V, Tj =-40...+150°C Slew rate on, 10 to 30% VOUT, RL = 47 Ω, Vbb = 12V, Tj =-40...+150°C Slew rate off, 10 to 30% VOUT, RL = 47 Ω, Vbb = 12V, Tj =-40...+150°C Operating Parameters Operating voltage2) Operating voltage slew rate Undervoltage shutdown IL(ISO) IL(GNDhigh) -1.18 -- 270 540 1.3 -- 300 600 -1 mΩ A mA µs V/µs V/µs ton toff dV /dton -dV/dtoff --1 2 ----- 50 55 10 15 Tj =-40...+150°C: Vbb(on) dVbb/dt Tj =25°C: Vbb(under) Tj =-40...+150°C: Undervoltage restart Tj =-40...+150°C: Vbb(u rst) Undervoltage restart of charge pump Vbb(ucp) see diagram page 11 Tj =-40...+150°C: Undervoltage hysteresis ∆Vbb(under) ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Vbb(over) Overvoltage restart Tj =-40...+150°C: Vbb(o rst) Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) 3) Overvoltage protection Tj =-40...+150°C: Vbb(AZ) Ibb=10 mA Standby current (pin 3), Ibb(off) VIN=0 Tj=-40...+150°C: 4) Operating current (Pin 1) , VIN=5 V IGND 4.7 -1 2.9 2.7 ---34 34 -59 ----4.9 0.2 --0.5 70 34 +1 4.5 4.7 4.9 7.5 -46 ---- V V/µs V V V V V V V V µA --- 40 2 50 4 mA 2) 3) 4 ) At supply voltage increase up to Vbb= 4.9 V typ without charge pump, VOUT ≈Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 3 2003-Oct-01 BTS 308 Parameter and Conditions at Tj = 25 °C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Protection Functions5) Initial peak short circuit current limit (pin 3 to 5)6), IL(SCp) ( max 100 µs if VON > VON(SC) ) Vbb = 12V Tj =-40°C: Tj =25°C: =+150°C: Tj Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: td(SC) min value valid only, if input "low" time exceeds 60 µs --2.5 15 -5 --- 10 --100 A µs V V °C K V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150°C: Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 7) Diagnostic Characteristics Open load detection current (included in standby current Ibb(off)) VON(CL) VON(SC) Tjt ∆Tjt -Vbb 59 -150 --- 67 3.5 -10 -- 75 ---32 Tj=-40...+150°C: IL(off) Tj=-40..150°C: VOUT(OL) 0 2 -3 30 4 µA V Open load detection voltage 5 ) 6 7 ) ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. Short circuit current limit for max. duration of td(SC) max=100 µs, prior to shutdown Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group Page 4 2003-Oct-01 BTS 308 Parameter and Conditions at Tj = 25 °C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback8) Input resistance RI see circuit page 6 Input turn-on threshold voltage Tj =-40..+150 VIN(T+) Input turn-off threshold voltage Tj =-40..+150° VIN(T-) Input threshold hysteresis, Tj =-40..+150°C ∆ VIN(T) Off state input current (pin 2), VIN = 0.4 V, IIN(off) Tj =-40..+150°C On state input current (pin 2), VIN = 3.5 V, Tj =-40..+150°C Delay time for status with open load after Input neg. slope (see diagram page 11) -1.5 0.8 0.2 8 10 50 15 4 ----22 -50 -2.4 --30 50 400 100 kΩ V V V µA µA µs µs IIN(on) td(ST OL3) Status invalid after positive input slope td(ST SC) (short circuit) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +50 uA: VST(high) ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low) 5.4 -- 6 -- -0.4 V 8) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group Page 5 2003-Oct-01 BTS 308 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 9 Status BTS 308 H H L H H L L H L L H H H H ) H L L H H L L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11) Terms Ibb I IN 2 I ST V V bb IN V ST 4 ST GND 1 R GND IGND V OUT IN 3 Vbb IL PROFET OUT 5 VON Status output +5V R ST(ON) ST GND ESDZD Input circuit (ESD protection) R IN I ESD-Zener diode: 6 V typ., max 5 mA; RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Short circuit detection Fault Condition: VON > 3.5 V typ.; IN high ESD-ZD I GND I I + V bb ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). V ON OUT Logic unit Short circuit detection 9 ) Power Transistor off, high impedance, internal pull up current source for open load detection. Semiconductor Group Page 6 2003-Oct-01 BTS 308 GND disconnect Inductive and overvoltage output clamp + V bb V Z 3 IN Vbb PROFET 4 V bb V IN V ST ST GND 1 V GND OUT 2 VON 5 OUT GND PROFET VON clamped to 67 V typ. Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Overvolt. and reverse batt. protection + V bb V Z2 GND disconnect with GND pull up 3 R IN IN RI Logic 2 IN Vbb PROFET OUT 5 R ST ST 4 V Z1 ST GND 1 PROFET GND R GND Signal GND V V bb V IN ST V GND VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 Ω, RST= 15 kΩ, RI= 4 kΩ typ. Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Vbb disconnect with charged inductive load 3 high 2 IN Vbb PROFET 4 ST GND 1 I L(OL) OUT 5 OFF V bb Logic unit Open load detection V OUT Normal load current can be handled by the PROFET itself. Signal GND Semiconductor Group Page 7 2003-Oct-01 BTS 308 Vbb disconnect with charged external inductive load S high 2 IN 3 Vbb Inductive Load switch-off energy dissipation E bb E AS Vbb PROFET OUT EL ELoad IN PROFET OUT 5 D 4 ST GND 1 = ST GND ZL V { L RL bb ER If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Energy stored in load inductance: EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L IL·RL ·(V + |VOUT(CL)|)· ln (1+ ) |VOUT(CL)| 2·RL bb 2 Semiconductor Group Page 8 2003-Oct-01 BTS 308 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 Ω in GND connection, protection against loss of ground Type Logic version BTS 410D2 410E2 410G2 410H2 D X X X X E G H X 307 308 Overtemperature protection with hysteresis Tj >150 °C, latch function10)11) Tj >150 °C, with auto-restart on cooling Short circuit to GND protection switches off when VON>3.5 V typ. and Vbb> 8 V typ10) switches off when VON>3.5 V typ. switches off when VON>8.5 V (when first turned on after approx. 0 µs) Achieved through overtemperature protection typ.10) X X X X X X X X Open load detection in OFF-state with sensing current -- µA typ. in ON-state with sensing voltage drop across power transistor X X X X X X X -13) X X X X X X X X X 13) X X X X -13) X X X X X X X X X X X X X X X X X X X - Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart ) 12 Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage X - Status output type CMOS Open drain X X X X X Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X X X X X X Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) X X X X Protection against loss of GND ) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V OUT ≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 11) With latch function. Reseted by a) Input low, b) Undervoltage 12) No auto restart after overvoltage in case of short circuit 13) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection 10 Semiconductor Group Page 9 2003-Oct-01 BTS 308 Timing diagrams Figure 1a: Vbb turn on: IN Figure 3a: Turn on into short circuit, IN t V bb ST d(bb IN) VOUT V OUT td(SC) A ST open drain I L t t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 µs td(SC) approx. 200µs if Vbb - VOUT > 3.5 V typ. Figure 3b: Turn on into overload, Figure 2a: Switching an inductive load IN IN IL I L(SCp) ST I L(SCr) V OUT ST t I L t Heating up may require several seconds, Vbb - VOUT < 3.5 V typ. Semiconductor Group Page 10 2003-Oct-01 BTS 308 Figure 3c: Short circuit while on: Figure 5a: Open load: detection in OFF-state, turn on/off to open load IN IN t ST ST d(ST OL3) V OUT V OUT I IL L **) t open normal *) t **) current peak approx. 20 µs in case of external capacity td(ST,OL3) may be higher due to high impedance *) IL = -- µA typ Figure 4a: Overtemperature, Reset if (IN=low) and (Tj